Zhuang Daming's research while affiliated with Tsinghua University and other places
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Publications (11)
The as-deposited CuIn1-xGaxSe2 (CIGS) thin films were fabricated by magnetron sputtering from a quaternary CIGS target, and then the as-deposited films were annealed in a temperature range from 240℃ to 550℃. The effect of the annealing temperature on the electric properties (carrier concentration and carrier mobility) of the films was investigated...
Hot pressed sintering is used to fabricate CIGS targets with Cu2Se, In2Se3, and Ga2Se3 as raw powders. The influences of sintering temperature and sintering pressure on the phase structures, section morphology and composition of the target were studied. The results showed that chalcopyrite CuInSe2 is acquired at lower sintering temperature. With te...
Cu2ZnSnS4 thin films were fabricated through sulfurization of sputtered precursors. Precursors with different chemical compositions were prepared to investigate the influence of precursor's composition on the properties of CZTS thin films. It has been revealed that CZTS thin films with good crystallinity can be obtained for all the precursors. Espe...
CuInx Ga1−x Se2 (CIGSe) thin films have been deposited by magnetron sputtering from a CIGSe target and annealed in Se (Selenium) vapor atmosphere. Scanning Electron Microscope (SEM), X-Ray Diffraction (XRD), Raman, X-ray Fluorescence (XRF), Hall tester were used to observe and analyze the compositions, microstructures, surface morphologies and elec...
The CIGS film is prepared by two-stage process, that is magnetron sputtering and solid Se source selenization process, Se element diffuses in CIG precursors at a speed, and the diffusion constant is 6.3×10-11cm2/s at a substrate temperature of 610 °C, the selezation duration should be controlled in 15 minutes, if not the Cu content is superfluous,...
The authors report an efficient way of incorporating single-wall carbon nanotubes (SWNTs) into alumina matrix with strong interfaces by heterocoagulation. The fracture toughness of SWNTs/Al{sub 2}O{sub 3} composite reaches 6.40{+-}0.3 MPa m{sup 1/2}, which is twice as high as that of unreinforced alumina. The flexure strength of the composite also...
The effect of sputtering power on the phase structures of Cu-In precursors and the properties of CuInSe2 (CIS) films were investigated. Cu-In precursors were prepared using a middle frequency AC magnetron at different sputtering powers. CuInSe2 films were formed by selenization in a selenium atmosphere. SEM and EDX were used to observe the surface...
Cu-In precursor films with a Cu/In atomic ratio approaching 1 were prepared using middle frequency A. C. magnetron sputtering with a Cu-In alloy target to investigate local agglomeration in Cu-In alloy layers and its effects on the element distributions and microstructure of selenized CuInSe2 (CIS) films. CIS absorbers for solar cells were formed b...
N-doped TiO2 films were prepared by mid-frequency alternative reactive magnetron sputtering. The N concentration of the TiO2-xNx films was analyzed by XPS. And the absorption properties of the films in visible region were investigated. The results show that the mass fraction of Ng in reactive gases is a key variable in influencing the concentration...
The influence of the annealing temperature on the micro-structure and surface morphology of TiO2 thin film prepared by midfrequency alternative magnetron sputtering technique has been studied. The micro-structures and surface morphology were examined by XRD and AFM. The results showed that the TiO2 thin film sputtered at room temperature is amporph...
Citations
... However, thermal instability occurs frequently because of the localized density of states and simultaneous vacancies initiated by transition metal ion doping as well as an increase in charge carrier recombination. 70 Although TiO 2 doped with metal cations has promising impacts on photocatalysis, it has been reported to have several drawbacks. 71 It is observed that photocatalytic events of metal ion doped TiO 2 decreases under ultraviolet irradiation as they suffer from thermal instability and trap sites for charge carriers induced by the metal centers. ...
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... And since the CIG layer was deposited on the Mo layer, the spectrum also shows the presence of the (110) and (221) peaks of Mo. The results of L. Fang et al. [11] suggested that the combination of Cu 11 In 9 and CuIn phases made the structure of CIG precursor film loose, what favored the diffusion of Se atoms into the depth of the film during the selenization process. And examined by EDS, the atom ratio among the Cu, In, Ga of the CIG precursor film is 48.8: 22.9: 28.3. ...
... Samples b and d in Fig.1 are of the same elemental deposition sequence except that d does not contain Ga. In curve d, the peak at 30.9° may be related to the InSe second phase [6] . It is obvious that sample b has far better crystallinity than sample d which containing other phases besides CIGS. ...
... There is no secondary phase detected, which offers good crystallinity and a high phase purity for the annealed CIGSe films. The weak CIGSe peak in the XRD spectra of all samples can be attributed to the spontaneous peeling off of the CIGSe layer after hightemperature Se-free annealing (Hexin et al. 2011). The peeling off of the CIGSe layer can be caused by factors such as the GaSe growth at the CIGSe/Mo junction (Fleutot et al. ) and a thick MoSe 2 layer that is not oriented parallel to the substrate [Patent: KR20140068306A]. ...
... The reinforcement of the CNT inside the ceramic matrix gained emphasis from last decades due to prolong sustainability in harsh environments possessing high mechanical electrical and tribological characteristics [8,9]. Earlier researchers showed that the behaviour of CNT doped composites are dependent on the arrangement of the graphite sheet "rolled" into CNT, nanostructure, diameter, and length of the tubes [10,11]. Furthermore, two class of CNT i.e. single-walled carbon nanotubes (SWCNTs) and multi-walled carbon nanotubes (MWCNTs) were introduced by the researchers based on characteristic. ...
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