Yuan Xu's research while affiliated with National Huaqiao University and other places

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Publications (2)


The XRD patterns of Ba(ZrxTi1-x)O3 ceramics at different Zr/Ti ratio
Lattice constant of Ba(ZrxTi1−x)O3 ceramics at different Zr/Ti ratios
SEM photos of Ba(ZrxTi1−x)O3 ceramics at different Zr/Ti ratios
Relative density curve of Ba(ZrxTi1−x)O3 ceramics at different Zr/Ti ratios
The dielectric constant and dielectric loss curve of Ba(ZrxTi1−x)O3 ceramics with different Zr/Ti ratios measured at 1 kHz

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Effect of Zr4+ content on crystal structure, micromorphology, ferroelectric and dielectric properties of Ba(ZrxTi1−x)O3 ceramics
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April 2020

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167 Reads

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8 Citations

Journal of Materials Science: Materials in Electronics

Lei Xu

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Yuan Xu

Ba(ZrxTi1−x)O3 ceramics (x = 0.15, 0.2, 0.25, 0.3) were prepared with solid-state reaction method. The ratio of Zr/Ti influences the crystal structure, micromorphology, ferroelectric and dielectric properties of BZT ceramics, which were characterized, respectively, by X-ray diffraction, scanning electron microscope, ferroelectric test system and dielectric test system. The X-ray diffraction patterns show that the zirconium titanate ceramic samples adopt cubic phase structure and no secondary phase. As the Zr4+ content increases, the lattice constant increases and the grain size decreases. BZT ceramic sample with 15% zirconium content has the highest dielectric constant. As the Zr4+ content increases, the dielectric constant is gradually decreased, and Curie temperature dropped from 334 to 226 K. The sample has the largest remanent polarization, when the zirconium ion content is 15%. Subsequently, the remanent polarization is reduced as the zirconium ion content increases.

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Effect of MgO addition on sintering temperature, crystal structure, dielectric and ferroelectric properties of lead-free BZT ceramics

April 2019

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291 Reads

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18 Citations

Journal of Materials Science: Materials in Electronics

Yuan Xu

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Kaituo Zhang

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Lei Fu

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[...]

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Ligui Chen

MgO addition Ba(Zr0.15Ti0.85)O3 (BZT) ceramics was prepared using conventional solid state reaction method and effect the MgO content in BZT ceramics on their sintering temperature, microscopic appearance, dielectric properties and ferroelectric properties was investigated. The result is that the addition of MgO can greatly reduce the sintering temperature of BZT ceramics. The average grain size can be gradually reduced as the concentration of MgO increases. The lattice constant is reduced by Mg²⁺ entering the crystal structure instead of Ti⁴⁺ or Zr⁴⁺. BZT ceramics exhibit excellent dielectric properties when a small amount of MgO was added. The maximum dielectric constant moves to the low temperature region when MgO content was increases. The hysteresis loop becomes thinner and the coercive field was significantly reduced.

Citations (2)


... While the tunable performance of bilayer ceramics has been investigated rarely. It was reported that the loss tangent of BZT is lower than that of BST and the introduction of Ca 2+ into A-site can enhance the dielectric characteristics of BZT [30,31] [33]. Homoplastically, the equivalent ionic radii of (Zr 0.2 Ti 0.8 ) 2+ and (Zr 0.225 Ti 0.775 ) 2+ are 0.6280 Å and 0.6308 Å, respectively. ...

Reference:

The influence of interface on the dielectric and tunable properties of BCZT/BZT ceramic
Effect of Zr4+ content on crystal structure, micromorphology, ferroelectric and dielectric properties of Ba(ZrxTi1−x)O3 ceramics

Journal of Materials Science: Materials in Electronics

... Muhammad et al. reported that the use of Li 2 CO 3 can reduce the sintering temperature of BaTiO 3 from 1500 • C to 1350 • C [10]. Xu et al. introduced MgO into BaTiO 3 , which not only reduced the sintering temperature but also improved the properties of BaTiO 3 [11]. In the sintering process of BaTiO 3 , the metal ions of some metal oxides can enter the lattice. ...

Effect of MgO addition on sintering temperature, crystal structure, dielectric and ferroelectric properties of lead-free BZT ceramics

Journal of Materials Science: Materials in Electronics