Xiangliang Jin's research while affiliated with Hunan Normal University and other places
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Publications (111)
Ambient light sensors are becoming increasingly popular due to their effectiveness in extending the battery life of portable electronic devices. However, conventional ambient light sensors are large in area and small in dynamic range, and they do not take into account the effects caused due to a dark current. To address the above problems, a progra...
This paper delineates the implementation of a gate-controlled Silicon Controlled Rectifier (SCR) behavioral model using Cadence software. The model is designed to tackle the absence of gate-control effect characteristics in extant models. This enables more precise simulation of the snapback behavior of such gate-controlled SCR devices under electro...
Electrostatic discharge (ESD) is a critical factor affecting the reliability of advanced integrated circuit chips. Simulating device-level ESD in chips has become a challenging task due to the lack of a standardized physical model capable of characterizing a wide range of electrostatic stress conditions. This article introduces a novel passive hybr...
Dual‐directional SCR (DDSCR) with bidirectional discharge paths and high robustness is widely employed for electrostatic discharge (ESD) protection in integrated circuits. However, the design and simulation of on‐chip ESD protection circuits for dual‐directional paths remain challenging due to a lack of relevant device models. This paper designs a...
Upconversion (UC) nanomaterials are of interest to researchers because of their excellent photostability, effective quantum efficiency and optical temperature dependence. However, most UC nanomaterials are thermally quenched, which causes optical nanothermometers to be susceptible to their own thermal effects, reducing the accuracy of temperature m...
Neuronal oscillation, as the fundamental component of information processing and transmission in the brain, plays a pivotal role in human cognition, learning, and memory. In this article, we introduce a novel silicon neuron device (SND) featuring light pulse modulation, aiming to emulate the oscillatory dynamics observed in biological neurons. The...
The responsiveness of the photodetectors is critical to the accuracy of the fluorescent fiber optical temperature sensor. However, the current gain and signal-to-noise ratio (SNR) of traditional photodiodes (PDs) is low, which makes it difficult to meet the high-precision detection requirements of the system. In response to the above problems, this...
The application environment of industry-level fluorescence temperature sensors is harsh, posing a significant threat to the reliability of the detectors. To address this issue, this paper proposes a novel anti-ESD-enhanced single photon avalanche diode (AESPAD) that directly couples photoelectric conversion and electrostatic discharge (ESD) protect...
Single photon avalanche diode (SPAD) has the advantage of high internal gain, which is widely used in fluorescence detection and quantum communication. The high internal gain of the device is mainly due to avalanche multiplier effect. Therefore, it is of great significance to study avalanche multiplication effect for the design and performance opti...
Based on the 0.18um CMOS process, proposed a new power-rail electrostatic discharge (ESD) clamp circuit. The proposed circuit can adjust the voltage biased to the big clamp NMOS (Mbig) gate by adjusting the width of one MOS transistor, and the feedback path is designed to prolong the response time of Mbig. The simulation results demonstrated that t...
In recent years, converting environmental energy into electrical energy to meet the needs of modern society for clean and sustainable energy has become a research hotspot. Electrostatic energy is a pollution-free environmental energy source. The use of electrostatic conversion devices to convert electrostatic energy into electrical energy has been...
In order to flexibly control the voltage-clamping capability of silicon controlled rectifiers (SCRs), this paper proposes a photoelectric gate-controlled SCR (PGCSCR). Equivalent circuits and technology computer aided design (TCAD) simulations are used to analyze how the device works. The device has been validated by a standard 0.18 µm Bipolar CMOS...
Purpose
As it is known, the electrostatic discharge (ESD) protection design of integrated circuit is very important, among which the silicon controlled rectifier (SCR) is one of the most commonly used ESD protection devices. However, the traditional SCR has the disadvantages of too high trigger voltage, too low holding voltage after the snapback an...
The working environment of the industry-level high-voltage communication bus is harsh. Strong electrostatic interference has become one of the key factors affecting the stability of the core module. However, the traditional silicon-controlled rectifier (SCR) is difficult to meet the electrostatic discharge (ESD) design requirements for high-voltage...
Currently, lanthanide ion doped upconversion (UC) phosphors that usually use Yb³⁺ and Nd³⁺ as sensitizers are widely used in optical thermometers. However, under 1532 nm laser excitation with deeper tissue penetration, Er³⁺ has abundant UC luminescence. In this paper, a novel optical thermometer based on NaLuF4:20% Er³⁺ microcrystals is prepared by...
In this paper, a double-pole double-throw analog switch with n-channel architecture driven by a charge pump is described. The architecture proposed in this paper not only can reduce the on-resistance of the complementary metal oxide semiconductor (CMOS) switch, but also can realize a stable on-resistance within the full swing range of the input sig...
Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit design more difficult. Therefore, the modeling of RTS noise in SPAD devices is of great significa...
In the ESD protection design work, the most effective way to improve the holding voltage of bidirectional silicon-controlled rectifier or SCR device is to increase the distance between the cathode and anode of it. However, for DDSCR devices with multi-finger layouts, increasing this distance will result in a decrease in failure current and require...
In this paper, a new optical thermometer is reported, based on the upconversion (UC) luminescent NaLuF4:Er³⁺, Tm³⁺ microcrystals. Under the excitation of 1532 nm laser, the red UC emission of NaLuF4:Er³⁺ microcrystals are significantly enhanced by introducing Tm³⁺ energy-trapping center. The optical temperature dependence of NaLuF4:Er³⁺, Tm³⁺ micro...
It is commonly acknowledged that, the electrostatic discharge phenomenon induced by charge transfer is accompanied by a huge loss of energy. That is why the collection and utilization of electrostatic energy are expected to alleviate the problem of the global energy supply shortage to a great extent. However, the electrostatic pulse will release hu...
The Dual-Direction Silicon Controlled Rectifier (DDSCR) device has dual-direction electrostatic protection function and strong current discharging ability, which is widely used in ESD on-chip protection. In this paper, a high performance symmetric high voltage Dual-Direction Silicon Controlled Rectifier with floating P+ (HVDDSCR_FP+) is designed fo...
Optical thermometry technology plays a significant role in plenty of fields owing to its unrivaled properties such as sensitive, noncontact, reliable. A ratiometric optical thermometer based on Nd³⁺/Tm³⁺/Yb³⁺/Gd³⁺ Four-doped NaYF4 nanomaterials is developed. Unusually, the 750 nm emission increases with increasing temperature. The 750 nm upconversi...
The input/output (I/O) pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge (ESD) protection devices. It is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier (NBL-GCSCR) manufactured by the 0.18...
In this paper, we propose a novel normally-off MIS-HEMT structure, mainly using Split-Gate Technology, Piezo Neutralization Technique (PNT), Field Plate Technology. By analyzing the effects of different Al composition in the PNT layer and buffer layer on devices, the Piezo Neutralization Technique is optimized. The current turn-on/off is controlled...
In the field of medical thermotherapy, heating cancer cells to 42.5–43 °C by microwave can make cancer cells inactive. Beyond this temperature range, normal cells are also damaged, which makes the accuracy of temperature detection very important. The active temperature sensor is seriously disturbed by strong electromagnetic field, which is difficul...
A double-pole double-throw analog switch circuit structure with low power consumption, low on-resistance and capable of transmitting negative signals is designed in this paper, which has been developed in 0.18 μm BCD technology. The analog switch circuit is providing about 5 V high swing signal transmission for 2.7–5 V supply voltage in the tempera...
Gate structures are used as efficient auxiliary components to improve the electrostatic discharge (ESD) performance of traditional silicon controlled rectifiers (SCRs). However, it has not been explored how the gate geometry potentially affects leakage behaviors and ESD characteristics of SCR devices. In this paper, a novel percolation model is pro...
The combination of biological neurology and memristive theory has greatly promoted the development of neuromorphic computing. To build a large-scale artificial intelligence alert system, the exploration of bionic synapses compatible with standard processes has become an urgent problem to be solved in the next step. In response to the above applicat...
RS485 interface is widely used in the area of industrial control and remote meter reading, which are often subjected to serious electrostatic damage. A new On-Chip TVS (OCT) structure without extra process modification and a novel electrostatic discharge method for RS485 transceiver IC have been proposed. It is composed of a serie of Zener diodes a...
Microwave hyperthermia is a new method of treating cancer, where the therapeutic effect is determined by the heating temperature. Traditional active temperature sensors are interfered by high frequency so that the accuracy of temperature measurement cannot be guaranteed. It is of great significance to study the high-precision fluorescent optical fi...
Single photon avalanche diodes(SPAD) are widely used in fluorescence detection. The fluorescent optical fiber temperature sensor has strict regulations on the photoelectric conversion capability and spectral response range of the detector. Therefore, in response to the above problems, this paper proposes an N-type buried electric-field-drive guard...
The current aggregation mechanism created by the gate structure is proposed for electrostatic discharging (ESD). Through device simulation, the size-expanded gate structure in gate-control dual-direction silicon controlled rectifier (GC-DDSCR) is found to aggregate the surface parasitic current path and the main SCR current path. The SCR current pa...
Fluorescent optical fiber temperature sensors require high-performance silicon-based single photon detectors with large-scale on-chip integration capabilities to improve the detection accuracy of the system. Therefore, this paper proposes a gate-controlled single photon avalanche diode (GC-SPAD) with high photon-detection-probability (PDP). In orde...
Laterally Diffused Metal Oxide Semiconductor Silicon-Controlled Rectifier (LDMOS-SCR) is usually used in Electrostatic Discharge (ESD) protection. LDMOS-SCR discharges current by parasitic SCR, but the MOS in it cannot work when parasitic SCR is stabilized. To further enhance the Electrostatic Discharge (ESD) discharging capability of LDMOS-SCR, a...
Due to the unique nonlinear theory of memristors, it has been a research hotspot in the application of bionic synapses and neuromorphic computing for a long time. However, the currently designed memristors are difficult to be compatible with standard microelectronic processes to achieve large-scale integration. In this paper, a prototype structure...
A novel bipolar photon-controlled generalized memristor model with an avalanche photodiode (APD) passive quenching circuit is presented in this paper. The SPICE model of the circuit is established and its fingerprints are analyzed by the pinched hysteresis loops with different bipolar periodic stimuli. The dynamical characteristics of the proposed...
Single photon avalanche diodes(SPAD) based on avalanche effect have been widely used in the detection of extremely weak light signals. Conventional SPAD devices manufactured with silicon-based CMOS technology have a high dark count rate(DCR), making it difficult to accurately detect single photon signals. This paper proposes a low dark count rate r...
In this paper, we propose a high-sensitivity optical sensor at terahertz frequencies based on a composite structure containing a one-dimensional photonic crystal (1D PC) coated with a layer of monolayer graphene. Between the 1D PC and the graphene there is a sensing medium. This high-sensitivity phenomenon originates from the excitation of optical...
![Current limiting circuit proposed in [5]](publication/337397076/figure/fig1/AS:11431281201909574@1698664392878/Current-limiting-circuit-proposed-in-5_Q320.jpg)
![Current limiting circuit proposed in [6]](publication/337397076/figure/fig2/AS:11431281201928685@1698664392999/Current-limiting-circuit-proposed-in-6_Q320.jpg)
![Current limiting circuit proposed in [7]](publication/337397076/figure/fig3/AS:11431281201928686@1698664393120/Current-limiting-circuit-proposed-in-7_Q320.jpg)
In this work, a class‐AB operational amplifier is to be presented, which is developed in a 0.5 μm CDMOS technology. The proposed amplifier is composed of a folded cascade input stage and a class‐AB output stage. Owing to the special design of the operational amplifier, the robustness of the whole circuit has been enhanced. The proposed system can d...
A single pixel in time of flight cameras receives multiple reflected light from different scene points, resulting in erroneous depth information. In this paper, based on the proposed sparse decomposition, a coarse and fine sparse decomposition based on compressed sensing is applied to multipath separation. The applied method uses a linear combinati...
As semiconductor process continues to advance, the miniaturization of feature sizes places higher demands on high-failure electro-static discharge (ESD) applications. This article explores the connection between the physical structure of a device-level silicon controlled rectifier (SCR) and high-failure ESD characteristics. The gate-controlled sili...
In order to make the dual-direction silicon-controlled rectifier(SCR) which is highly robust in a high voltage environment, a gate controlled dual direction SCR(GC-DDSCR) device is proposed. After analyzing the working principle of the device through the equivalent circuit and Two-Dimensional(2D) device simulation, the Electro-Static discharge(ESD)...
In this article, a dual loop-compensated, fast-transient, low-dropout regulator (LDO) is proposed for battery-powered applications. It is successfully implemented in a 0.18-
$\mu \text{m}$
CMOS process with a total silicon area of
$210\,\,\mu \text{m}\,\,\times 593\,\,\mu \text{m}$
. The proposed LDO is composed of two feedback loops. The fast f...
In an industrial-grade bus, transient voltage suppressor (TVS) devices that need to withstand inrush currents ensure electrostatic discharge (ESD) reliability of the core chip. This article designs four types of dual-direction silicon-controlled rectifier (DDSCR) device structures based on the 0.5-μm CMOS process. The ESD performance of the TVS dev...
In this paper, we have shown that tunable nonlinear group delay of reflected light beam at terahertz frequencies can be achieved by a modified Otto configuration with the insertion of monolayer graphene and nonlinear substrate. This large nonlinear reflected group delay originates from the excitation of surface plasmon resonance at the interface of...
Both traditional dual direction SCR (TDDSCR) and deep well gate-controlled dual direction SCR (DGC-DDSCR) are designed and fabricated in a 0.5 μm CMOS process. The ESD performance of the DDSCR device is predicted and verified by two-dimensional device simulation and transmission line pulse test results. The results show that when the TDDSCR changes...
In this paper, the Goos–Hänchen (GH) shift resulting from the graphene surface plasmon in a modified Otto configuration is investigated theoretically. Through analysis the electrical field at the graphene interface, we found that the GH shift can be significantly enlarged negatively due to the exciting of surface plasmon resonance of graphene in te...
The dual directional silicon-controlled rectifier (DDSCR) device is widely used in on-chip electrostatic discharge (ESD) protection owing to its bi-directional ESD protection and strong current-tolerating capability per area. In this paper, an asymmetrical dual directional ESD protection device for automotive application was developed in a 0.18-µm...
A novel vertical cavity surface emitting laser (VCSEL) driver is presented for high-speed optical interconnect. At the output stage of the driver, a transformer is used to compensate the bandwidth limitations imposed by transistors, pads and packaging parasitic. At the same time, a monolithic transformer equivalent circuit model applied in the circ...
A low power current reference circuit with an enable-control terminal is presented in this work, which has been developed in 0.5 μm CDMOS technology. The circuit is capable of providing the reference current in a nano-ampere range for the supply voltage from 2 V to 3 V in the temperature range from −30 °C to 85 °C. The simulation and measurement re...
In this paper, a novel island diodes triggering silicon-controlled rectifier with waffle layout (IDTWSCR) is fabricated in a 0.5-µm BCDMOS process. Such device structure obtains strong ESD robustness by using island diodes trigger without increasing device area. The primary cause of why it improves the multi-finger high-voltage (HV) SCR's ESD robus...
Wireless power transfer (WPT) has become increasingly widespread in recent years, ranging from electric vehicles, portable consumer electronics, and implantable biomedical devices to flexible/stretchable electronics. The authors here present a WPT system based on the maximum efficiency design principle. Utilising the properties of Helmholtz coils,...
In order to boost the holding voltage of the multi-fingered dual-direction silicon-controlled rectifier (DDSCR), a novel embedded topology is proposed instead of the traditional interdigital multi-finger arrangement. It is verified in a 0.5μm 18V standard CDMOS process and applied to the high-voltage (HV) electro-static discharge (ESD) protection....
The low-voltage triggering silicon-controlled rectifier (LVTSCR) device is widely used in on-chip electrostatic discharge (ESD) protection owing to its low trigger voltage and strong current-tolerating capability per area. In this paper, an improved LVTSCR by adding a narrow NWell (NW2) under the source region of NMOS is discussed, which is realize...
In this work, gate-driven, substrate-triggered and gate-substrate-triggered techniques for both 5V NMOS-based and 18V NLDMOS-based power clamps under electrostatic discharge (ESD) stress were investigated in details. Schematics of the three trigger designs were depicted and their physical mechanisms were studied at first. To verify and make compari...
A set of novel silicon controlled rectifier (SCR) devices` characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injec...
A complementary metal-oxide semiconductor photodetector with ring-shaped structure is presented in this paper, which consists of a p-channel metal-oxide-semiconductor field-effect transistor and lateral photodiodes and can be applied for ultraviolet (UV)/blue detection. The p-channel metal-oxide-semiconductor is enclosed by ring-shaped lateral phot...
The impact of inserting P+ pickup on high-voltage multi-finger laterally diffused metal-oxide-semiconductor-silicon-controlled rectifier (LDMOS-SCR) has been studied in this article. Four-finger LDMOS-SCR structures with finger length of 50 μm using 0.5 μm 18 V complementarily diffused metal oxide semiconductor (CDMOS) process were fabricated and t...
In this paper, a novel in-pixel time-to-digital converter (TDC) for 3D time-of-flight cameras is presented. Coarse–fine architecture has been used to guarantee both wide dynamic range and high time resolution. The proposed TDC exploits pulse-train time amplifier (TA) to further improve the time resolution and optimize time error performance. The 11...
In this paper, Ultraviolet (UV) and blue-extended photodiode with octagon-ring-shaped structure is proposed, which have increased responsivity for the UV and blue light, high responsive speed with UV/blue selectivity. To enhance the speed of the photodiode further, an Interrupted-P-Finger is employed instead of a continuous P+ region for maximizing...
An improved type device serving as a photodiode for an ultraviolet and infrared (UV-IR) complementary photodetector is presented in this paper, which can be applied for ultraviolet (UV)/blue detection. The device has been modeled and some critical parameters of this new structure (such as spectral responsivity, breakdown voltage) have been derived...
N-channel, lateral, double-diffused MOS (NLDMOS) devices with finger-type, square-type, and octagon-type layout styles are investigated and fabricated in a 0.5-μm 18 V CMOS-DMOS (CDMOS) process. The square-type nLDMOS achieves the highest ESD failure current of 4.7 A and is also the device occupying the smallest chip area among the three layout sty...
A device with bulk and source interleaved dotting is fabricated in a 0.5-μm 24 V CDMOS process, and the root cause of why it improves the multi-finger high-voltage lateral double-diffused MOS (LDMOS)'s electrostatic discharge (ESD) robustness is detected by Atlas three-dimensional device simulation and transmission line pulse system. Such device st...
Source and bulk layout style is investigated for the purpose of improving ESD performance of multi-fingered high-voltage (HV) LDMOS. The device with bulk and source interleaved dotting (BSDOT) is fabricated in a 0.5μm 24V CDMOS process. Its ESD characteristics are studied employing transmission line pulse (TLP) measurement. Compared to traditional...
The occurrence of transient induced latch up (TLU) in output driver circuits is studied. A RS485 transceiver fabricated by a 0.5-μm CMOS process was used for a test chip, and the reason for TLU be induced in output driver circuit is analyzed in this paper, the latch-up and EMMI tests are taken to confirm the reason and position of latch-up.
Citations
... The main principles involved in in-tire energy harvesting include piezoelectricity, electro-magnetics, and electrostatics. To incorporate piezoelectric materials into the tire, piezoelectric composites, piezoelectric ceramics, piezoelectric fibers, and similar materials are utilized [13][14][15][16]. According to the piezoelectric effect, when the tire is deformed, the piezoelectric material is distorted by the force to generate an electric field [17,18]. ...
... Upconversion luminescent materials (UCL) are luminescent materials that produce higher energy photons under lower energy photon excitation, e.g., materials that emit visible light under infrared laser excitation. 1,2 They have a wide range of applications in temperature sensing, [3][4][5] anticounterfeiting, [6][7][8][9] infrared detection, [10][11][12][13] biomarkers, [14][15][16] solar cells, [17][18][19][20] and other fields. ...
![[object Object]](https://i1.rgstatic.net/ii/profile.image/280088026337286-1443789597343_Q64/Jun-Luo-8.jpg)
... Currently, in the structural design of ESD devices, designers often incorporate gate electrodes into SCR [1], LDMOS [2,3] devices to reduce the on-resistance of the current path. However, in the current design environment, these devices with gates do not effectively cascade circuits and lack standardized circuit models. ...
... Its response speed, resolution, and detection accuracy will be seriously affected. Furthermore, industry-level applications often face harsh interference factors, such as high voltage, strong electromagnetic fields, and static electricity, which can seriously threaten the reliability of detectors and systems [3], [4]. As a result, there is an urgent need to develop high-detection efficiency and high-reliability single-photon devices capable of operating in complex environments. ...
... Avalanche photodiodes (APDs) are extensively utilized in fluorescence fiber optical temperature measurement techniques. This is attributed to their high sensitivity range, rapid response time, and capability to detect weak light [1][2][3][4][5]. The fluorescence lifetime of the same material varies with temperature. ...
... Therefore, the signal analysis method derived from the measured data of WAMS is favored by researchers in terms of modal parameter identification . Modal parameter identification methods mainly include Prony [14], Hibert-Huang Transform (HHT) [15]and empirical wavelet transform. In literatures [16], the Prony algorithm is used to analyze the sub-synchronous oscillation signal, and the parameter information such as amplitude and frequency of the signal can be accurately obtained. ...
... There are two ways to improve the detector FF. For a single device, a virtual guard ring is implemented in the absence of doping in specific regions, which can reduce the constraints of the design rules compared to those of a physical ring and achieve a more compact SPAD structure [15]. For detector arrays, a large FF can be achieved by optimizing their floorplan. ...
... To prevent ESD events from increasing the damage to components, we use TSMC 0.5 µm UHV process components for self-protection component designs in this study. (9)(10)(11)(12)(13)(14)(15)(16) These UHV devices will be presented in a circular layout, and the final optimal design is expected to have high/ultrahigh-voltage components with different breakdown voltages and an excellent ESD capability in ESD sensing applications. It is hoped that the final designed components can be used as protection components under different operating voltages, and the ESD capability of these components is analyzed through TLP measurements. ...
... For 5G 2-10 watt power is required since gain obtained by antenna that is rf power is effectively converted to DC power .A silicon controlled recti er is designed with 2.5kiloohm resistance and 7microfarad capacitor connected with a thyristor of 0.7v forward biasing voltage. Designing has been done possible by Simulink [20]. ...
... In addition, ESD events can often easily cause internal damage to IC devices. (1)(2)(3)(4)(5) ESD failures of components are usually more severe at higher operating voltages. However, because the ESD energy is not very high, it is often difficult to detect ESD damage by optical microscopy (OM) especially for low operating voltages. ...
