Najla M. Khusayfan's research while affiliated with University of Jeddah and other places
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Publications (18)
In this work, polycrystalline n-CrSe2 nanosheets with thickness of 100 nm are grown on p-type Si wafers by the thermal deposition technique under vacuum pressure of 10−5 mbar. Structural and optical investigations showed the preferred growth of the trigonal phase of CrSe2 on Si substrates. Direct allowed transitions within an energy band gap of 2.6...
In the current study the crystalline phase of indium selenide thin films which were grown by the thermal evaporation technique is achieved via pulsed laser welding technique (PLW) in a second. The films crystallinity is achieved under various welding conditions including the pulse width (PW), repetition frequency (f_r ) and pulse diameter (d). The...
In the current study polycrystalline nanosheets of CrSe2 of thicknesses of 100 nm are deposited onto p-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$p-$$\end{document...
Herein chromium selenide (n-CrSe) nanosheets are deposited onto amorphous indium selenide (n-InSe) thin films by the thermal evaporation technique under a vacuum pressure of 10⁻⁵ mbar. The formed InSe/CrSe heterojunctions are structurally, optically and electrically investigated. InSe/CrSe heterojunctions exhibited a band structure discontinuities...
In this study, thin films of CuInSe 2 (CIS) are expeditiously fabricated within 1 s utilizing the pulsed laser welding (PLW) technique. Preceding the PLW process, thin films of InSe (500 nm) are coated with Cu nanosheets of 60 and 120 nm thicknesses using vacuum coating systems. The optimal PLW parameters leading to the formation of CIS films inclu...
In this work, thin film of \(p-\) PbSe is coated onto n-Si thin crystals to perform as multifunctional devices. The devices are fabricated by the thermal evaporation technique under a vacuum pressure of 10–5 mbar. Structural and morphological analyses have shown the preferred growth of cubic phase of lead selenide resulting in a large lattice misma...
Herein thin films of PbSe are coated onto amorphous glass, amorphous silicon (a−Si) and crystalline n−type Si (n−Si) wafers by the thermal evaporation technique under a vacuum pressure of 10⁻⁵ mbar. The films are structurally, morphologically, compositionally, optically and electrically characterized. Strong effect of the nature (amorphous or cryst...
Magnesium selenide thin films are coated onto glass and semitransparent Pt substrates (nanosheets) by the vacuum evaporation technique under a vacuum pressure of 10−5 mbar. The effect of Pt nanosheets of thicknesses of 100 nm on the structural, compositional, optical, and electrical properties of MgSe is explored. It is found that platinum nanoshee...
Abstract Herein, the design and characterization of Ag/SeO2/C avalanche type resonant tunneling devices are reported. Thin pellets of SeO2 nano-powders pressed under hydraulic pressure of 1.0 MPa which is used as the active material are characterized. They showed tetragonal structure refereeing to space group of P 4 2 m b c and lattice parameters o...
Herein stacked layers of germanium and selenium oxide are employed to fabricate heterojunction devices that can perform as a multifunctional thin film transistors (TFT). The stacked layers of Ge and SeO2 are coated onto ultrasonically cleaned glass and Ag thin film substrates using thermal deposition technique under a vacuum pressure of 1.5×10−4 mb...
Herein, powders of SeO2 are subjected to hydraulic pressure in the range of 1.0–12 MPa and heating cycles in the range of 290–383 K. The pressure and temperature effects on the crystalline nature, plane orientations, structural parameters, surface morphology, composition, electrical resistivity, capacitance spectra and conductance spectra are explo...
Herein, the effects of polycrystalline germanium dioxide substrates on the structural, morphological, optical and electrical properties of zinc selenide thin films are reported. Thin films of ZnSe coated onto GeO2 are prepared by the thermal evaporation technique under vacuum pressure of 10–5 mbar. Compared to films grown onto glass substrates, ZnS...
Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as band stop filters. The stacked layers of Au/ZnSe/GeO2 are coated under pressure of 10⁻⁵ mbar. The device is characterized by X‐ray diffraction, X‐ray photoelectron, X‐ray fluorescence and imp...
Herein, the formation, structural, morphological, compositional, optical, dielectric, photoelectrical and electrical properties of the CdSe/GeO2 heterojunctions are explored. While the surface displayed formation of deficient GeO, the bulk of the films exhibited correct stoichiometry of GeO2 and CdSe. It is found that stacking of GeO2 onto CdSe enh...
In this article, the physical design and performance of stacked layers of MoO
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/Mg/MoO
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(MMM) is investigated by means of X-ray diffraction and bi...
In this work, MoO3/ZnPc optical interfaces as signal receivers employable in visible light communication technology (VLC) are studied and characterized. The heterojunctions which are prepared by the thermal evaporation technique under vacuum pressure of 10-5 mbar are structurally, optically and electrically investigated. The MoO3/ZnPc exhibited con...
In this work, the effects of the thin film thicknesses on the structural, optical absorption, energy band gap, dielectric spectra and optical conductivity parameters of the Zinc phthalocyanine thin films are considered. Thin films of ZnPc of thicknesses of 50-600 nm which are coated onto glass substrates are observed to exhibit amorphous nature of...
Citations
... Inset-4 of Fig. 1 showing an SEM for glass/PbSe films [13]. Large numerical values of lattice mismatch accounts for the existing interfacial stresses [14]. Inset-2 and inset-3 of Fig. 1 show the scanning electron microscopy images for PbSe films coated onto n−Si substrates being enlarged by 2000 and 10,000 times, respectively. ...
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... This concept within a study, was achieved a hysteresis-free transition behavior at a subthreshold swing (SS) as small as 9.7 mV without a DE layer attached to the structure's FE layer (Song et al., 2022). In another study, the researchers explored Pt nanosheets' effects on MgSe thin films, revealing enhancements in light absorbability, energy band red-shift, and decreased dielectric constants, while sandwiching MgSe between Pt layers enabled the creation of tunneling-type diodes with negative capacitance properties, indicating potential applications in parasitic capacitance mitigation, noise reduction, and microwave resonance (Algarni et al., 2022). ...
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... Negative conductance effect is known to be dominant in a microwave source, amplifier, or logical devices (Kim et al. 2003). Negative conductance effect was previously observed in Ag/ SeO 2 /C avalanche type resonant tunneling diodes (Al Garni et al. 2022), silicon based conventional metal-oxide-semiconductor (CMOS) -compatible electro-optical memory devices (Gherabli et al. 2023) and La/Ge gigahertz receivers (Alkhamisi et al. 2023). ...
... In equation (3) V bi is the built in potential, kT q/ is the thermal energy in eV, A is the device area Ñ is the free carrier density and e ¥ is the high frequency reduced dielectric constant of the device. It is given by the relation[14][15][16]. The slopes and the intercepts of the linear fittings which are shown infigure 3(b) reveal Vb i and Ñ values of 2.48 eV and 5.29 × 10 14 cm −3 , respectively, for the ASSSY devices in the dark. ...
... In addition the capacitance spectra shown in Fig. 5 (b) additionally display a decreasing trend of variation with increasing signal driving frequency but at slower rate. The negative resistance usually originates from high trap density in the films (Algarni et al. 2022). It can also result from the surpassing of interband tunneling process due to a significant decrease in the density of states in the films (Tanaka 1995). ...
... CS is one of the simplest and most cost-effective techniques that can be applied for a large-scale production of powders [12]. The unique properties of zinc-selenide mixture such as high combustion temperature (∼2000°C), short reaction time (∼5-10 s) [13], make this synthesis process attractive in comparison with traditional techniques for zinc selenide synthesis, for example, the heating of reactant precursor powders in a resistive furnace (conventional process), by hydrothermal technique [14] or by the thermal evaporation technique [15]. ...
... The lattice mismatches, Δ a % = |aLa−aCuSe| a CuSe × 100% , between the hexagonal lanthanum substrates and the cubic CuSe along the a-and c-axis are 33.3% and 114.6%, respectively. Large lattice mismatches are mentioned resulting in interfacial stresses and are reported forming three dimensional quantum confinements Algarni et al. 2021). Three-dimensional quantum confinement is capable of altering radically the nonlinear optical properties of semiconductors in the transparency regions (Cotter et al. 1992). ...
... Cu-Se Coulombic interactions are stronger than those of In-Se (bond length is 270 pm (Yongxin and Yunxi 2022)). The shorter bond length of Cu-Se compared to that of In-Se results in stabled electron-hole pair interactions motivating the completing of the broken bonds (Khusayfan et al. 2021). Hence inducing the nucleation and growth processes. ...
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... They have found that electrical conductivity of film structure strongly depends on the deposition rate of Ag. Physical and optical properties of MoO 3 /Mg/MoO 3 thin film structure on Au substrate have been studied by Khusayfan and Khanfar [28]. ...
... Table-1 provides information about the plasmon frequencies. The plasmon frequency determines the values where the MIM device will behave as band pass, band stop and band reject filters [24,25]. The suggested values of limiting frequencies are consistent with the previously published ones confirming the good correlation between the Drude-Lorentz prediction and the experimentally verified results [8,24]. ...
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