Md Asif Khan's research while affiliated with National Institute of Technology Rourkela and other places
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Publications (2)
Si nanowires (SiNWs) are receiving tremendous attention due to their significant optical and electrical properties; however, porosity on the nanowires opens an opportunity for further improvement. The work establishes a connection between morphological changes in the optical and electrical characteristics of the porous SiNWs (PSiNWs) because of H2O...
Si nanostructures are preferred for optoelectronic applications over bulk Si owing to their enhanced optical and electrical characteristics. Si nanowires (SiNWs) and porous SiNWs (PSiNWs) are the widely studied structures for photovoltaics. The optical and electrical characteristics depend on the structural attributes of the nanowires- length, diam...
Citations
... SiNW array was fabricated using a B-doped p-type Si wafer of (0.01-0.02) Ω cm resistivity and (100 ± 10) µm thickness by MACE [10,22]. The Si wafer was immersed in the MACE electrolyte consisting of 0.02 M AgNO 3 (Sigma-Aldrich, 99.99%), 0.1765 M H 2 O 2 (30%, Fisher Scientific), and 4.8 M HF (48%, Fisher Scientific) in a petridish for 60 min. ...
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... Reactive ion etching and lithography techniques are relatively costly; however, they are sophisticated. In contrast, the MACE facilitates the formation of SiNW arrays on wafer surfaces through a straightforward, adaptable, and cost-effective wet chemical process for tuning the optical characteristics by controlling the SiNW dimensions [17]. ...
