M.A. Gribelyuk's research works | Texas Instruments Inc. and other places

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Strong effect of dopant concentration gradient on etching rate

Article

January 1998

22 Reads

12 Citations

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Dopant concentration sensitive etching of silicon in HF:HNO3:CH3COOH solution was studied using epitaxially grown silicon samples. The study has shown the unstable character of the process, significant time and structure size dependencies of the etching rate, as well as the dependence of the rate on the dopant concentration gradient. The data may be rationalized on the basis of the electrochemical and autocatalytic nature of the reaction. The influence of the dopant gradient and overall device geometry on the etching rate may cause significant inaccuracy of the dopant distribution measurements. © 1998 American Vacuum Society.

... [24] HF − 2 wird außerdem als die reaktivste HF-Spezies eingeschätzt. [88,89] Allerdings ist die alleinige Gegenwart einer wässrigen HF-Lösung ebenfalls nicht ausreichend, um einen effektiven Ätzprozess an Silicium durchzuführen, da die Ätzrate von kristallinem Silicium in wässriger HF-Lösung unter 0,1 nm /min liegt: [90] Si [92,93,95] der Temperatur der Ätzlösungen, [94] der Orientierung [94] und Dotierung des Siliciumsubstrats [96] auf die Ätzraten und die resultierende Morphologie des geätzten Substrats, [95,97,98] bis zu Studien zum Ätzmechanismus und den in den Ätzlösungen vorliegenden chemischen Gleichgewichten, [97,[99][100][101] [100] und Steinert et al. [101] ...
Reference:
In situ Photolumineszenz bei Ätzprozessen zur Nanostrukturierung von amorphem und kristallinem Silicium

Strong effect of dopant concentration gradient on etching rate

Citing Article
January 1998

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

M.A. Gribelyuk's research while affiliated with Texas Instruments Inc. and other places

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