Lingnan Wu's research while affiliated with Chinese Academy of Sciences and other places

... Therefore, in an attempt to operate at lower pressure while preserving the oxygen content in the films, we coupled our PLD system to a remote oxygen plasma source so that film growth can take place in an ambient containing reactive oxygen species (such as ions or neutral oxygen atoms). Plasma assisted PLD can positively influence the growth of the oxide films [17][18][19][20][21][22] in terms of stoichiometry, surface roughness, crystalline orientation and elimination of the macroscopic particulates in the layers. In this work, we explore the potential of Remote Plasma Assisted-PLD (RPA-PLD) as a technique for the growth of manganese Thin Solid Films 612 (2016) 450-455 oxide thin films with particular focus on the stabilization of the MnO 2 phase. ...

... Moreover, it can be used as an intermediate hard mask [19] for depositing any further lithography processes like block copolymer lithography [20] or nanosphere lithography [21] etc. SiO 2 is a well-known material in microfabrication and nanofabrication in respect of both etching and deposition. SiO 2 can be deposited at low temperatures by atomic layer deposition [22], plasma enhances chemical vapor deposition [23], electron beam evaporation, sputter deposition [24], TEOS spin coating [25], and many more. In this study, electron beam evaporation is chosen because of its well controlled deposition rate can be deposit uniform ultrathin films. ...

... Different techniques have been applied to process alumina coatings on metal or polymer substrates such as electron beam evaporation [9], rf magnetron sputtering [2], atomic layer deposition [10,11], sol-gel [5] or metalorganic CVD (MOCVD) [7,[12][13][14]. The latter is one of the most attractive techniques for the deposition of such films on complex-in-shape geometries with conformal coverage i.e. uniform thickness along the surface. ...

... Silicon dioxide is the main film-forming material with a low refractive index. SiO 2 films are produced using both metal [8][9][10] and oxide targets [11][12][13][14][15]. In the case of metal targets, individual atoms and metallic clusters pass into the gas phase from the target and are oxidized by the oxygen flow supplied to the vacuum chamber. ...

... Masse et al. [26] studied Ta 2 O 5 thin films at different annealing temperatures ranging from room temperature up to 900 ℃ and found mutual diffusion of oxygen, silicon, and Ta at high temperatures. He et al. [27] studied the effects of oxygen pressure on film roughness and optical transmission of PLD-grown Ta 2 O 5 films. ...