Jun-Yue Zheng's scientific contributions
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Publication (1)
Efficient Ohmic contacts are highly preferred in metal/semiconductor (M/S) junctions to achieve the exceptional intrinsic characteristics of the two-dimensional (2D) semiconductor channel. However, due to the strong Fermi level pinning effect, it is difficult to predict the Schottky barrier heights of heterojunctions, especially those between the M...
Citations
... Metal-semiconductor (MS) junctions based on two-dimensional (2D) materials are crucial components of next-generation electronic and optoelectronic devices. [1][2][3][4][5][6] The performance of these devices is dominated by the contact resistance at interfaces, [7][8][9] which is characterized by the Schottky barrier (SB) height (SBH: U SB ) evaluated by the Schottky-Mott (S-M) rule. [10][11][12] For an ideal MS contact, the value (U SML ) of SBH can be predicted by the S-M limits: U e SML ¼ W m À v s for electrons and U h SML ¼ I s À W m for holes, where W m denotes the work function of metal, v s and I s are the ionization potential and electron affinity of the semiconductor, respectively. ...
![[object Object]](https://i1.rgstatic.net/ii/profile.image/272434309890065-1441964809575_Q64/Xiaoyuan-Zhou-4.jpg)
