Jiaqi Zhou's scientific contributions

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Publications (3)


FIG. 2. Electronic structures, k-resolved scattering rates n τ -1 nk , and k-resolved velocities n v nk for (a)-(c) electron mobility and (d)-(f) hole mobility of pristine GaSb semiconductor, as well as for charge conductivities of (g)-(i) electron-doped and (j)-(l) hole-doped GaSb systems. Relevant Fermi surface windows are denoted by vertical arrows.
FIG. 3. (a) Energy-dependent spin Hall conductivities of all the pristine monolayers at 300 K. CBM and VBM of semiconductors are denoted by horizontal dashed lines, and the VBM is set as Fermi energy. Fermi energies of electron-doped and hole-doped systems are marked as e-E F and h-E F by horizontal solid lines. (b) Diagram of the spin Hall current with canted spin in the yz-plane. (c) Spin Berry curvature of GaSb at h-E F .
FIG. 4. Spin Hall ratios of all the monolayers doped by (a) electron and (b) hole. The subscripts indicate the results of two SHC tensor elements, σy and σz.
Enhanced Spin Hall Ratio in Two-Dimensional III-V Semiconductors
  • Preprint
  • File available

August 2023

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46 Reads

Jiaqi Zhou

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Samuel Poncé

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Spin Hall effect plays a critical role in spintronics since it can convert charge current to spin current. Using state-of-the-art ab initio calculations including quadrupole and spin-orbit coupling, the charge and spin transports have been investigated in pristine and doped two-dimensional III-V semiconductors. Valence bands induce a strong scattering which limits charge conductivity in the hole-doped system, where spin Hall conductivity is enhanced by the spin-orbit splitting, yielding an ultrahigh spin Hall ratio $\xi\approx0.9$ in GaAs monolayer at room temperature.

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FIG. 1. (a) Atomic model of monolayer FGT with a mirror symmetry (the red dashed line). (b) Atomic model of bilayer FGT with an inversion center (the red point). (c) Top view of bilayer FGT including mirror symmetries. Fe, Ge, and Te are represented by blue, green, and orange balls, respectively. (d) Illustration of the magnetization evolution in different planes.
FIG. 4. (a) Spin projected bands of bilayer FGT with z magnetization, where the dark (bright) color denotes spin along −z (+z). (b) BC, (c) SBC, (d) intra-SBC, and (e) inter-SBC. The upper panels show the bands projected by different Berry curvatures, and the lower panels depict the summation results. All the Berry curvatures are in log scale [Eq. (S9)], where the blue (red) color denotes the negative (positive) curvature value. E F is set to zero.
Controllable spin current in van der Waals ferromagnet Fe 3 GeTe 2

November 2021

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65 Reads

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4 Citations

Physical Review Research

The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. The spin Hall effect is a prevalent method to generate spin current. However, it is difficult to manipulate its spin polarization in a nonmagnet. Recently, the discovery of spin current in ferromagnets offers an opportunity to realize the manipulation. In the present Letter, the spin current in the van der Waals ferromagnet Fe3GeTe2 (FGT) with varying magnetization is theoretically investigated. It has been observed that the spin current in FGT presents a nonlinear behavior with respect to magnetization. In-plane and out-of-plane spin polarizations emerge simultaneously, and the bilayer FGT can even exhibit arbitrary polarization owing to the reduced symmetry. More intriguingly, the correlation between the anomalous Hall effect and spin anomalous Hall effect has been interpreted from the aspect of Berry curvature and spin. This work illustrates that the interplay of magnetism and symmetry can effectively control the magnitude and polarization of the spin current, providing a practical method to realize exotic spin-orbit torques.


FIG. 1. (a) Atomic model of monolayer FGT with a mirror symmetry (the red dashed line). (b) Atomic model of bilayer FGT with an inversion center (the red point). (c) Top view of bilayer FGT including mirror symmetries. Fe, Ge, and Te are represented by blue, green, and orange balls, respectively. (d) Illustration of the magnetization evolution in different planes.
FIG. 2. Anomalous Hall conductivity and spin current conductivity of (a) monolayer and (b) bilayer FGT with magnetization rotating inside xy-, xz -, and yz -planes. σAH of xy-magnetization is magnified 10 times in (b). Markers denote the ab initio data, while lines show the fitting curves. Spin current conductivity has been multiplied by a factor of −2e/, thus the units of both σAH and σ γ SC are e 2 /.
FIG. 3. (a) Anomalous Hall conductivity, (b) conversion efficiency, (c) spin anomalous Hall conductivity, and (d) spin Hall conductivity of monolayer and bilayer FGT, respectively, with the xz -magnetization. Markers in (a), (c), and (d) denote the ab initio data, while markers in (b) are derived data. (a), (b), and (d) show the fitting curves, while (c) shows the curves of analytic function, i.e. Eq. (12). The units of σAH, σ γ SAH , and σ γ SH are e 2 /.
FIG. 4. (a) Spin-projected bands of bilayer FGT with zmagnetization, the red (blue) color denotes spin along +z (−z). (b) Berry curvature Ω and (c) spin-Berry curvature ¯ Ω z along k-path. (d) Ω and (e) ¯ Ω z on 2D k-slice. Ω and ¯ Ω z have been dealt with log function as in Eq. (52) of Ref. [39], and the units of both are A 2 .
Controllable Spin Current in van der Waals Ferromagnet Fe\textsubscript{3}GeTe\textsubscript{2}

April 2021

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112 Reads

The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current. However, it is difficult to manipulate its spin polarization in nonmagnet. Recently, the discovery of spin current in ferromagnet offers opportunity to realize the manipulation. In the present work, the spin current in van der Waals ferromagnet Fe3 GeTe2 (FGT) with varying magnetization is theoretically investigated. It has been observed that the spin current in FGT presents the nonlinear behavior with respect to magnetization. The in-plane and out-of-plane spin polarization emerges simultaneously, and the bilayer FGT can even exhibit arbitrary spin polarization thanks to the reduced symmetry. More intriguingly, the correlation between anomalous Hall effect (AHE) and spin anomalous Hall effect (SAHE) has been interpreted from the aspect of Berry curvature. This work illustrates that the interplay of symmetry and magnetism can effectively control the magnitude and spin polarization of the spin current, providing a practical method to realize exotic spin-orbit torques.

Citations (1)


... Neumann's principle illustrates that the symmetries of physical property must include all the symmetries of the crystal [14]. Namely, the broken symmetries can remove the restrictions on SHC tensor [43,44]. Apart from the conventional SHC σ z , the lifted mirror symmetry M z enables another unconventional tensor element σ y , while σ x is prohibited by the preserved M x . ...

Reference:

Enhanced Spin Hall Ratio in Two-Dimensional III-V Semiconductors
Controllable spin current in van der Waals ferromagnet Fe 3 GeTe 2

Physical Review Research