Jean Moran's scientific contributions

... Significant research into the use of Ge in CMOS devices has been performed in the past decade, resolving processing challenges such as gate stack design and reduction of Fermi level pinning related to contacts on n-type Ge. [13][14][15][16][17] While high-performance p-type Ge devices have been fabricated, 18,19 n-type devices are still suffering from high diffusion rates of implanted dopants and poor dopant activation. 20,21 Of the n-type dopants for Ge (Sb, As, and P), P has the highest solidsolubility limit of 1 × 10 20 cm −3 . Drawbacks of Sb and As implants include dopant deactivation at annealing temperatures as low as 350°C and high levels of implantation-induced damage when compared to P. 22 All three n-type dopant species show significant diffusivity during postimplant annealing and the attainment of free carrier concentrations above 5 × 10 19 cm −3 remains difficult. ...