Jean Jude Domingo's scientific contributions

In this paper, we do a theoretical study of the effect of damage caused by both irradiation energy and 10 damage coefficient on an optoelectronic component, such as a copper indium gallium diselenide (CIGSe2) thin-11 film solar cell, under monochromatic illumination of the front face of this solar cell. Using Mathcad simulation 12 software, we plotted the curves indicating the variation of the different parameters of this cell. The study 13 showed that all these parameters are weakened by the effects of irradiation energy in the presence of high 14 damage coefficients. Indeed, the short-circuit current density Jsc has increased from 48.601 mA.cm-2 to 48.613 15 mA.cm-2 for a damage coefficient (K1) ranging respectively from 25 to 5 (cm 2 .s-1). Moreover, for an irradiation 16 energy value  = 250 MeV, we note an open circuit voltage of Voc = 0.59236 V, a fill factor FF = 53.14% and a 17 theoretical conversion efficiency = 15.30 %. While for a low value of irradiation energy = 0.1 MeV, the 18 open circuit voltage Voc increases until 0.5939 V, the fill form factor FF to 70 % and the theoretical conversion 19 efficiency increases to 20.25%, thus indicating degrading effect of the irradiation energy on the solar cell's 20 performance. 21 22

Thin films of ZnO, CZTS (Cu 2 ZnSnS 4) and ZnO-CZTS were prepared by spray pyrolysis deposition (SPD). After spraying a precursor solution of ZnO directly onto fluorine-doped tin oxide (FTO) substrats, CZTS thin layers were sprayed onto layers of ZnO to forme a p-n junction. Some CZTS layers were directly spray onto fluorine-doped tin oxide substrats. ZnO is a wide band gap n-type material, consisting of abundant and nontoxic elements, and is thus expected to be a good substitute for CdS buffer layer in solar cells. In this paper, we report the study of CZTS and ZnO thin films synthesized by chemical spray pyrolysis (CSP) method. During the deposition of the ZnO thin films on the FTO substrats the number of sequences was varied from 20 to 40. The influence of the ZnO on the structural, optical, morphological and electrical properties of CZTS films was studied using various techniques. The X-ray diffraction studies showed the formation of kesterite (Cu 2 ZnSnS 4) phases with the peaks corresponding to (112), (220) and (312) planes. SEM study revealed a lack of uniformity of the surface of the CZTS layers sprayed onto the ZnO layers for a lower thickness of ZnO (FTO-ZnO20-CZTS). The band gap values of FTO-CZTS and FTO-ZnO-CZTS thin films were measured and found in the range 2.2-2.25 eV which are in good agreement with the results reported (2-2.2 eV). The morphological studies revealed the formation of some clusters randomly distributed on the film surface in the ZnO-containing layers, i.e. the FTO-ZnO20-CZTS and Finally, current-voltage measurements for different PV cells with maximum efficiency were carried out. A conversion efficiency (η) of 5.99% with fill factor (FF) = 18.8%, open circuit voltage (Voc) = 0.54 V, short circuit current density (Jsc) = 59 mA.cm2 were recorded through the FTO-ZnO40-CZTS thin film PV cell.

In this work, the heterojunction composed of a n-type ZnO transparent conductive oxide (OTC) layer, a n-type CdS buffer layer and a absorber layer based Cu (In, Ga)Se2 p doped is studied under the influence of a KF layer placed in the CIGS/CdS interface. This study was done by varying the thickness of KF using thin-film simulation software named SCAPS-1D. The presence of KF for a doping of the CIGS absorber of 1016cm-3 improves strongly the electrical parameters that are the Vco, the Jcc the FF, the maximum power and the conversion efficiency of the solar cell Ƞ. However, a decrease of the FF and the Jcc is noticed when the thickness of the KF is greater than 30nm causing a deterioration of the performances of the cell.

In the present work, we make a theoretical study of the wavelength effect on the capacity of a solar cell based on CIGS subjected to horizontal monochromatic light in frequency modulation. Based on the expression of the density of minority charge carriers, we study the photovoltage and capacity. A gap of 1.34eV corresponding to gallium ratio of 0.28 is selected. We find that efficiency is reduced by the increase in wavelength. Thus diffusing capacity results from the variation of the minority charge carriers in the base of the solar cell. The results show that the effectiveness of capacity decreases when the wavelength increases.