Jae-Hyeong Kim's research while affiliated with Sony Electronics Inc. and other places
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Publication (1)
A 72Mb 6T SRAM is designed with 2times144 separate-I/O and random R/W in parallel per cycle running at 875MHz DDR to achieve 504Gb/s bandwidth. It is fabricated in a 90nm CMOS process. Dual R/W self-timed clocks with core emulators are multiplexed to operate the SRAM core at 875MHz. On-chip DLL, programmable I/O skews, and programmable input termin...
