J. Braithwaite's research while affiliated with University of Surrey and other places
What is this page?
This page lists the scientific contributions of an author, who either does not have a ResearchGate profile, or has not yet added these contributions to their profile.
It was automatically created by ResearchGate to create a record of this author's body of work. We create such pages to advance our goal of creating and maintaining the most comprehensive scientific repository possible. In doing so, we process publicly available (personal) data relating to the author as a member of the scientific community.
If you're a ResearchGate member, you can follow this page to keep up with this author's work.
If you are this author, and you don't want us to display this page anymore, please let us know.
It was automatically created by ResearchGate to create a record of this author's body of work. We create such pages to advance our goal of creating and maintaining the most comprehensive scientific repository possible. In doing so, we process publicly available (personal) data relating to the author as a member of the scientific community.
If you're a ResearchGate member, you can follow this page to keep up with this author's work.
If you are this author, and you don't want us to display this page anymore, please let us know.
Publications (4)
By measuring the spontaneous emission from strained and unstrained 1.5 μm InGaAs quantum well lasers as a function of temperature we deduce the temperature dependence of the radiative current density at threshold corresponds to a characteristic temperature T0≊300 K, close to that expected from theory, whereas T0 of the threshold current is around 6...
The spontaneous emission efficiency of 1.5 mu m compressively strained MQW lasers was found to be higher than that of comparable unstrained devices. The activation energy for Auger recombination was higher in the strained devices. Both effects were explained in terms of a reduction in the hole mass by strain.
Citations
... As the performance of diode lasers degrades at elevated temperatures, it is necessary to cool the PICs to maintain performance. Thermal degradation of lasers is caused by gain reduction due to the wider spreading of the Fermi distribution of carriers at increased temperature 37 and by the loss of radiative carriers via various mechanisms, Article notably including carrier leakage over hetero-barriers 38 , Auger recombination 38,39 and intervalence band absorption 40,41 (Fig. 4a), all of which exponentially increase with temperature. Of these three carrier-loss mechanisms, Auger recombination and intervalence band recombination both decrease exponentially with material bandgap 38,41 . ...
