August 2015
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Pulse laser deposition was used in this research by Nd:YAG laser with λ=1064 nm average frequency 6 Hz and pulls duration 10 nm) to deposit ZnO thin films with thickness 100 nm. From Atomic Force microscope of prepared samples show an decrease in average diameter with increase etching time. From FTIR spectra of porous silicon with constant current 40 mA and different etching time .The peaks at around 626 cm-1 for Si-Si , 875 cm-1 wagging mode,1073 cm-1 stretching mode and the transmittance peak at 2097 cm-1 reveal to bending mode (Si3SiH). The photolumincense spectroscopy shows that the blue shift with increasing etching time. The operation temperature of gas sensor was studied for different temperature and found the maximum sensitivity (85.3) for 30 min porous silicon time.