Honghui He's research works | Nanjing University and other places

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Ultra-Small Size Micro-LEDs With Enhanced Efficiency for Near-Eye Display

Article

July 2024

6 Reads

IEEE Electron Device Letters

[...]

Micro Light-emitting diodes (Micro-LEDs) array for near-eye display with pixel dimensions of 1.3×1.5 μm 2 were fabricated, corresponding to a resolution of 10040 pixels per inch (PPI). Optimized N 2 O plasma treatment process was deployed to minimize the sidewall non-radiative recombination and increase radiative efficiency of Micro-LEDs. The experimental results demonstrated a significant improvement in external quantum efficiency (EQE) of blue and green Micro-LEDs, with peak EQE of 22.3% and 19.3%, respectively. High brightness and optical power density was acquired exceeding 5×10 7 nits and 7×10 4 mW/cm 2 . And excellent wavelength and efficiency stability were demonstrated with respect to the temperature. These results illustrate an immense potential of Micro-LEDs for high resolution near-eye display applications.

(a) Schematic of three-color stacking technology. (b) Schematic of a light-emitting quantum dot. (c) Schematic of mass transfer.

Development of micro-LED driver display.

(a) Equivalent circuit and operating schematic of the device. (b) Output characteristics and optical output power characteristics of the device. (c) Current gain and output characteristics for different doping concentrations in the emitter, base, and transition regions [37].

(a) 3D schematic of the device cross-section. (b) I–V characteristic curves of the emission region of the nanostructures. (c) EL mapping of the monolithic BJT structure. (d) Current gain extracted from the I–V curves [38].

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Monolithic Integration of GaN-Based Transistors and Micro-LED

March 2024

132 Reads

Nanomaterials

[...]

Micro-LED is considered an emerging display technology with significant potential for high resolution, brightness, and energy efficiency in display applications. However, its decreasing pixel size and complex manufacturing process create challenges for its integration with driving units. Recently, researchers have proposed various methods to achieve highly integrated micro-structures with driving unit. Researchers take advantage of the high performance of the transistors to achieve low power consumption, high current gain, and fast response frequency. This paper gives a review of recent studies on the new integration methods of micro-LEDs with different types of transistors, including the integration with BJT, HEMT, TFT, and MOSFET.

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Honghui He's research while affiliated with Nanjing University and other places

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