H. Amanai's scientific contributions
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Publications (3)
The phonon bottleneck effect is studied in InAs/GaInP quantum dots (QDs). The time-resolved photoluminescence spectra from the lowest (n=1) and second lowest (n=2) exciton states in QDs are measured in the temperature range of 5–200K. We find that the rise time of the n=1 level is about 500ps when the excitation energy is in resonance with the n=2...
The improvement of the characteristic temperature is one of the superior performances that are expected to QD-LD. However, the temperature characteristic has deteriorated at room temperature. As one of the cause, the thermal escape of the carrier from QD to wetting layer or matrix is considered. The (Al1-xGax)0.5In0.5P/InAs system has large band-di...
We studied the growth of self-assembled InAs quantum dots (QDs) on GaInP using solid source molecular beam epitaxy (MBE) with the aim of reducing the thermionic escape of bound carriers by burying the QDs in large bandgap materials such as GaInP. The density and size of QDs were measured by atomic force microscopy (AFM). This showed that InAs QDs w...
Citations
... This is significantly lower than the critical thickness of $1.6 ML for initialising InAs/GaAs QD growth via the Stranski-Krastanov (SK) mode. In general, the large clusters with irregular shapes are defective [19][20][21]. The formation of defective clusters can be explained by the aggregation of QDs due to the diffusion of In atoms from the InGaP buffer layer to the InAs QDs [22][23][24]. ...
... Another critical issue is the growth of QDs with proper size and composition so as to produce a transition energy of the order of 1.24 eV between the valence band (or hole ground state) and their electronic ground state level and, consequently, of 0.71 eV between the electronic ground state of the QDs and the barrier conduction band. In the case of InAs QDs on InGaP, the control of their composition can be critical due to the intermixing between As and P at the interface [13]. ...
... Recently, the efficient two-step photon absorption has been theoretically predicted by inserting closely stacked InAs QDs into a high-bandgap InGaP matrix [15]. In addition, this material system is well known for its strong phonon bottleneck effect at low temperature due to the large confinement for carriers [16]. Well aligned In 0.4 Ga 0.6 As/GaAs QDs were grown in InGaP matrix, which form a larger energy separation between the QD ground state and the conduction band edge in comparison to conventional InAs/ GaAs QDs [17]. ...
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