Fei Shang's research while affiliated with BOE Technology Group Co., Ltd. and other places
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Publications (2)
To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 25...
Advanced Etch‐Stop s tructure In‐Ga‐Zn‐Oxide thin film transistor (A‐ES TFT) using SD and IGZO layer self‐aligned process is lower production cost, less parasitic capacitance than etch‐stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5‐inch liquid crystal panel using A‐ES TFTs by o...
Citations
... However, issues with the BCE structure include degraded uniformity and reliability due to the process damage that often occurs in the back-channel during S/D electrode formation. 21,22) This results because, since the S/D electrode material is deposited directly and patterned on the semiconductor, the semiconductor back channels are exposed to the wet etchant or dry etching plasma. Furthermore, since IGZO is easily dissolved by the phosphoric, acetic, and nitric acid (PAN) etchants used to pattern Mo and Al S/D electrodes, controlling the S/D etching process is particularly difficult, which means that characteristic variations often occur. ...
... In recent years, amorphous oxide semiconductor materials, represented by IGZO, have received extensive attention for their rich properties. Compared to conventional a-Si TFTs, it has the advantages of good uniformity, simple manufacturing, low manufacturing cost, and high carrier mobility [27][28][29]. Besides, IGZO is a wider energy bandgap~3 eV material with good transparency and has become one of the alternative materials for transparent displays. ...
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