Ah Fatt Tong's research while affiliated with Nanyang Technological University and other places
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Publications (4)
A scalable and highly accurate RF symmetrical inductor model (with model error of less than 5%) has been developed from more than 100 test structures, enabling device performance versus layout size trade-offs and optimization up to 10 GHz. Large conductor width designs are found to yield good performance for inductors with small inductance values....
This paper presents the formation of the parasitic components that exist in the RF MOSFET structure during its high-frequency operation. The parasitic components are extracted from the transistor's S-parameter measurement, and its geometry dependence is studied with respect to its layout structure. Physical geometry equations are proposed to repres...
This paper presents the high-frequency (HF) noise modeling of an RF MOSFET for a 90-nm technology node. A brief discussion on the noise measurement theory is presented to illustrate the limitation of the noise measurement system. The extracted noise sources were studied for their geometry and biasing dependences and by implementing additional noise...
In this paper, we demonstrate a unit width ( W<sub>f</sub>) optimization technique based on their unity short-circuit current gain frequency (f<sub>T</sub>) unilateral power gain frequency (f<sub>MAX</sub>)? and high-frequency (HF) noise for RFCMOS transistors. Our results show that the trend for the above figures-of-merit (FOMs) with respect to th...
Citations
... The average inductance error of EM simulated with CSA is 5.66%, CSA with tested is 4% and EM simulated with tested is 6.87% as shown in table 2. The error percentage is negligible and it is almost less than 7% with we achieve 93% matched performance of designed and fabricated SPI models. To reduce the resistive loss of a conductor is to reduce the conductor width to minimize the substrate loss and which is more dominant than the resistive loss for large inductor structure [23]. Figure 7 shows inductance versus the number of turns and average error percentage of a square spiral inductor. ...
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... Similarly, determination of noise parameters is possible using scalable modeling of a device. 7 Thus, a SSSM is a challenging task for CMOS models. ...
... The fmax and ft are commonly used to evaluate the high-frequency performance of the active device. They can be calculated as follows [14]: ...
