A. Govil's scientific contributions

High resolution display applications require both high-voltage and high-speed to realize low-dissipation video amplification. This paper presents a complementary 160V 2GHz silicon-on-insulator technology where LDMOS device structures are designed utilizing three-dimensional RESURF depletion. These structures exhibit a static power dissipation-switching speed figure-of-merit which is at least a factor-of-two lower than any technology reported-to-date. A 50MHz-bandwidth video amplifier with a 8800V/μs slew-rate and static power dissipation less than 0.8W/channel has been fabricated, validating the intrinsic performance benefit of thin-layer silicon-on-insulator for high-voltage high-bandwidth application.

An integrated power amplifier is developed for CRT drivers using a high-voltage high-speed silicon-on-insulator process technology. A measured fall-time of 4.07ns is achieved for a 44.8V change on a 10.5pF load, corresponding to a slew-rate of 8800V/µs, while maintaining a static power dissipation of less than 0.7W per channel. This represents state-of-the-art performance for CRT driver integrated circuits, and establishes thin-layer silicon-on-insulator technology as a high-voltage high-frequency mixed-mode monolithic technology.