This article discusses some of the changes which can occur at interfaces due to reaction or annealing. For chemically unstable interfaces, the atomic recombinations result in formation of new phases, which can even be amorphous in the initial stages. When no further chemical evolution takes place, physical rearrangement can have important consequences on the structure and properties. Examples are drawn from work on Ti-Si, Pt-GaAs, Ti-Si-O-N, Al-Si and TiSi2-Si.
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http://dx.doi.org/10.1557/PROC-238-269
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@inproceedings{OPL:8147053,author = {Sinclair,R. and Ko,D. H. and Konno,T. J. and Nolan,T. P.},title = {Reactions at Solid Interfaces},booktitle = {Symposium Cb – Structure and Properties of Interfaces in Materials},series = {MRS Proceedings},volume = {238},year = {1991},doi = {10.1557/PROC-238-269},URL = {http://journals.cambridge.org/article_S1946427400454813},}
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Reactions at Solid Interfaces
R. Sinclair,D. H. Ko,T. J. Konno and T. P. Nolan (1991).
MRS Proceedings , Volume 238 , 1991, 269
http://journals.cambridge.org/action/displayAbstract?aid=8147053
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Reactions at Solid Interfaces
R. Sinclair,
D. H. Ko,
T. J. Konno
and T. P. Nolan 1991
MRS Proceedings,
,Volume238,
1991,
269
http://journals.cambridge.org/abstract_S1946427400454813
R. Sinclair,
D. H. Ko,
T. J. Konno
and T. P. Nolan
(1991).
Reactions at Solid Interfaces.
MRS Proceedings,
238,
269
doi:10.1557/PROC-238-269.
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