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Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry

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We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi$_2$Te$_3$ by using a low temperature scanning tunneling microscope. The interference fringes are caused by the scattering of the topological states off Ag impurities and step edges on the Bi$_2$Te$_3$(111) surface. By studying the voltage-dependent standing wave patterns, we determine the energy dispersion $E(k)$, which confirms the Dirac cone structure of the topological states. We further show that, very different from the conventional surface states, the backscattering of the topological states by nonmagnetic impurities is completely suppressed. The absence of backscattering is a spectacular manifestation of the time-reversal symmetry, which offers a direct proof of the topological nature of the surface states.
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arXiv:0908.4136v3 [cond-mat.mes-hall] 10 Oct 2009
Experimental demonstration of the topological surface states protected by the
time-reversal symmetry
Tong Zhang,1, 2 Peng Cheng,1Xi Chen,1, Jin-Feng Jia,1Xucun Ma,2Ke He,2Lili
Wang,2Haijun Zhang,2Xi Dai,2Zhong Fang,2Xincheng Xie,2and Qi-Kun Xue1, 2,
1Department of Physics, Tsinghua University, Beijing 100084, China
2Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
(Dated: October 10, 2009)
We report direct imaging of standing waves of the nontrivial surface states of topological insula-
tor Bi2Te3by using a low temperature scanning tunneling microscope. The interference fringes are
caused by the scattering of the topological states off Ag impurities and step edges on the Bi2Te3(111)
surface. By studying the voltage-dependent standing wave patterns, we determine the energy dis-
persion E(k), which confirms the Dirac cone structure of the topological states. We further show
that, very different from the conventional surface states, the backscattering of the topological states
by nonmagnetic impurities is completely suppressed. The absence of backscattering is a spectacular
manifestation of the time-reversal symmetry, which offers a direct proof of the topological nature of
the surface states.
PACS numbers: 68.37.Ef, 73.20.-r, 72.10.Fk, 72.25.Dc
The strong spin-orbital coupling in a certain class of
materials gives rise to the novel topological insulators in
two [1, 2] and three dimensions [3, 4, 5, 6, 7] in the
absence of an external magnetic field. The topological
states on the surfaces of three dimensional (3D) mate-
rials have been studied recently in Bi1xSbx[6, 8, 9],
Bi2Te3and Bi2Se3[7, 10, 11, 12, 13], which possess
insulating gaps in the bulk and gapless states on sur-
faces. The surface states of a 3D topological insulator
comprise of an odd number of massless Dirac cones and
the crossing of two dispersion branches with opposite
spins is fully protected by the time-reversal-symmetry
at the Dirac points. Such spin-helical states are ex-
pected to bring forward exotic physics, such as magnetic
monopole [14] and Majorana fermions [15, 16]. To date,
the experimental study of topological insulators is pre-
dominantly limited to the determination of their band
structure by angle-resolve photoemission spectroscopy
(ARPES) [8, 9, 10, 11, 12, 13]. Distinct quantum phe-
nomena associated with the nontrivial topological elec-
tronic states still remain unexplored. Particularly, there
is no direct experimental evidence for the time reversal
symmetry that protects the topological property. Here,
using the low temperature scanning tunneling microscopy
(STM) and spectroscopy (STS), we report the direct ob-
servation of quantum interference caused by scattering of
the 2D topologically nontrivial surface states off impuri-
ties and surface steps. Our work strongly supports the
surface nature of the topological states, and provides a
way to study the spinor wave function of the topological
state. More significantly, we find that the backscattering
of topological states by a nonmagnetic impurity is forbid-
den. This result directly demonstrates that the surface
states are indeed quantum-mechanically protected by the
time reversal symmetry.
The interference patterns in STM experiments [17, 18,
19, 20] result from the 2D surface states perturbed by
surface defects. A surface state is uniquely characterized
by a 2D Bloch wave vector ~
kwithin the surface Brillouin
zone (SBZ). During elastic scattering, a defect scatters
the incident wave with a wave vector ~
kiinto ~
kf=~
ki+~q,
with ~
kiand ~
kfbeing on the same constant-energy con-
tour (CEC). The quantum interference between the ini-
tial and final states results in a standing wave pattern
whose spatial period is given by 2π/q . When the STM
images of a standing wave are Fourier transformed [21],
the scattering wave vector ~q (~~q is the momentum trans-
fer) becomes directly visible in the reciprocal space. In
contrast, for bulk states, there will be continuous ranges
of wave vectors on the projected SBZ for a given energy.
Usually, no distinct interference fringe can be produced
by bulk states and visualized by STM. In this sense, the
standing wave is surface-states-sensitive and particularly
suitable for studying topological insulators.
Our experiments were conducted in an ultra-high vac-
uum low temperature (down to 0.4 K) STM system
equipped with molecular beam epitaxy (MBE) for film
growth (Unisoku). The stoichiometric Bi2Te3film, a ro-
bust topological insulator, was prepared on single crystal
substrate Si(111) by MBE. Details of sample prepara-
tion are described elsewhere [22]. Shown in Fig. 1(a)
is a typical STM image of the Bi2Te3film with a thick-
ness of 100 nm. The atomically flat morphology of
the film is clearly observed. The three steps seen in
Fig. 1(a) all have the height (0.94 nm) of a quintuple
layer. The steps are preferentially oriented along the
three close-packing ([100], [110] and [010]) directions.
The image with atomic resolution [Fig. 1(b)] exhibits
the two-dimensional hexagonal lattice structure of the
Te-terminated (111) surface of Bi2Te3. Our STM obser-
vation further reveals a small density of clovershaped de-
fects on the surface (see supporting material [23]). Simi-
2
FIG. 1: (a) The STM topograph of the Bi2Te3(111) film. The
imaged area, 250 nm by 250 nm, was scanned at a sample
bias of 3 V and tunneling current of 50 pA. (b) The atomic-
resolution image. Tellurium atom (pink colored) spacing is
about 4.3 ˚
A. The image was scanned at a sample bias of -
40 mV and tunneling current of 0.1 nA. (c) dI/dV spectrum
taken on bare Bi2Te3(111) surface. The spectrum was mea-
sured with setpoint V=0.3 V, I=0.1 nA. The arrows indicate
the bottom of conduction band and the top of valence band,
respectively. (d) Calculated band structure of Bi2Te3(111)
along high-symmetry directions of SBZ (see the insert). The
red regions indicate bulk energy bands and the purple regions
indicate bulk energy gaps. The surface states are red lines
around the ¯
Γ point.
lar to Bi2Se3[13, 24, 25], these structures can be assigned
to the substitutional Bi defects at the Te sites by examin-
ing their registration with respect to the 1 ×1-Te lattice
in the topmost layer.
The surface states of Bi2Te3were investigated by STS
and the first-principles calculations [7]. The STS de-
tects the differential tunneling conductance dI/dV [Fig.
1(c)], which gives a measure of the local density of states
(LDOS) of electrons at energy eV. The two shoulders in-
dicated by arrows in Fig. 1(c) are the bottom of the
bulk conduction band and the top of the bulk valence
band, respectively. The Fermi level (zero bias) is within
the energy gap, indicating that the film is an intrin-
sic bulk insulator [22]. The differential conductance in
the bulk insulating gap linearly depends on the bias and
is attributed to the gapless surface states. These fea-
tures in STS are in good agreement with those obtained
by the first-principles calculations (see supporting mate-
rial [23]). According to the calculations [Fig. 1(d)], the
topological states of Bi2Te3form a single Dirac cone at
the center (¯
Γ point) of the SBZ [10, 11], giving rise to
a vanishing DOS in the vicinity of k= 0. However, the
surface states around ¯
Γ point overlap in energy with the
bulk valence band. For this reason, the Dirac point is
invisible in STS.
On the aforementioned surface, we deposited a small
amount (0.01 ML) of Ag atoms, which form trimmers on
the surface, as shown in Fig. 2(a) and more clearly in
supporting material [23]. The atomically resolved STM
image (see supporting material [23]) reveals that the Ag
atom in a trimmer adsorbs on the top site of a surface
Te atom [26]. This situation is schematically shown in
Fig. 2(b). In addition, the Fermi level shifts upwards
in energy by 2030 meV after Ag deposition, suggest-
ing electron transfer from the Ag atoms to the substrate
(see supporting material [23]). The dI/dV mapping was
then carried out in a region containing Ag trimmers. At
each data point, the feedback was turned off and the bias
modulation was turned on to record dI/dV . This proce-
dure resulted in a series of spatial mapping of LDOS at
various bias voltages.
Figures 2(c) to 2(g) summarize the dI/dV maps for
bias voltages ranging from 50 mV to 400 mV from the
area shown in Fig. 2(a). The first striking aspect of these
images is the existence of standing wave [17, 18, 19] in
the vicinity of the Ag trimmers. The spatial modulation
of LDOS by an Ag trimmer forms a hexagonal pattern,
whose edges are perpendicular to the ¯
Γ¯
M directions in
SBZ. This situation is more clearly resolved at large bias
voltages [Figs. 2(f) and 2(g)]. As expected, the interfer-
ence pattern is anisotropic as a result of the hexagram
CEC [10]. The spatial period of the standing wave scales
inversely with the bias voltage and is determined by the
momentum transfer during scattering at a given energy.
Below 50 meV, the fringes become obscured. It results
from a combination of two effects: (i) The wavelength in-
creases rapidly as the bias voltage approaches the Dirac
point, where k= 0. (ii) At low energy, more topological
surface states with different wavelengths are involved in
the formation of standing wave as indicated by the first-
principles calculations [Fig. 1(d)]. The superposition of
waves with various wavelengths smears out the interfer-
ence fringes. With increasing bias, especially after the
surface states in the ¯
Γ¯
M direction merge into the bulk
conduction band at 0.2 eV above the Dirac point ac-
cording to calculation [Fig. 1(d)], the contribution of
states in the ¯
Γ¯
M direction vanishes and the states in
the vicinity of ¯
Γ¯
K direction gradually gain more weight,
leading to more distinct interference patterns. After the
surface states in the ¯
Γ¯
K direction merge into the bulk
conduction band at 0.6 eV above the Dirac point [Fig.
1(d)], the standing waves fade out again.
To quantify the standing waves and obtain the scat-
tering wave vectors, we performed Fourier transforma-
tion of the dI/dV maps into the ~q-space [Figs. 2(h) to
2(l)]. One important feature in the power spectra can be
immediately discerned by comparing the six-fold sym-
metric pattern in the ~q-space with SBZ (the red hexagon
in Fig. 2(h)): the regions with high intensity are al-
ways oriented toward the ¯
Γ¯
M directions, while the
3
FIG. 2: Standing waves induced by Ag trimmers on Bi2Te3(111) surface. (a) STM image (28 nm by 28 nm) of a region with
four Ag trimmers adsorbed on Bi2Te3(111) surface. (b) The adsorption geometry of Ag trimmer. (c) to (g) The dI /dV maps
of the same area as (a) at various sample bias voltages. Imaging conditions: I=0.1 nA. Each map has 128 by 128 pixels and
took two hours to complete. The interference fringes are evident in the images. The green and red regions indicate modulations
with high intensity. (h) to (k) The FFT power spectra of the dI /dV maps in (c) to (g). The SBZ in (h) is superimposed on
the power spectra to indicate the directions in ~q-space. The resolution of FFT, which is 2π/28 nm1, is determined by the size
of the STM image.
intensity in the ¯
Γ¯
K directions vanishes (see support-
ing material [23]). Such phenomena can be understood
by exploring possible scattering processes on the CEC
in the reciprocal space [Fig. 3(a)]. Generally, the ~
ki
and ~
kfpairs with high joint DOS should dominate the
quantum interference. For energies at which the inter-
ference fringes are prominent, the regions on CEC with
high DOS are primarily centered around the ¯
Γ¯
K di-
rections [10]. Therefore, three scattering wave vectors,
labeled ~q1,~q2and ~q3, might be expected to appear in the
power spectra. Among them, however, only ~q2is along
the ¯
Γ¯
M directions and can generate the observed stand-
ing waves. Both ~q1and ~q3are invisible in the power spec-
tra. There is a simple argument to account for the disap-
pearance of ~q1: the time-reversal invariance. The topo-
logical states |~
k↑i and | − ~
k↓i are related by the time-
reversal transformation: |~
k↓i =T |~
k↑i, where Tis the
time-reversal operator. It is straightforward to show that
h−~
k↓ |U|~
k↑i =−h~
k↑ |U| − ~
k↓i=−h−~
k↓ |U|~
k↑i = 0
for fermions, where Uis a time-reversal invariant oper-
ator and represents the impurity potential of the non-
magnetic Ag impurity. Therefore, the backscattering
between ~
kand ~
kis quantum-mechanically prohibited.
Most of the observed features in the interference pat-
tern, including the extinction of wave vector ~q3, have
been recently well explained by a full theoretical treat-
ment [27] based on the T-matrix approach for multiband
systems [28]. In addition to the existence of standing
waves, the absence of backscattering represents the sec-
ond and most striking aspect of our experiment, which
makes the topological standing waves more extraordinary
as compared to the conventional surface states on metal
samples [17, 18, 19, 20].
We can obtain the dispersion of the massless Dirac
FIG. 3: (a) The scattering geometry. The CEC is in the
shape of a hexagram. The dominant scattering wave vectors
connect two points in ¯
Γ¯
K directions on CEC. ~
ki(pink arrow)
and ~
kf(red arrows) denote the wave vectors of incident and
scattered states. ~q1,~q2and ~q3(blue arrows) are three possible
scattering wave vectors. (b) Energy dispersion as a function
of kin the ¯
Γ¯
K direction. The data (black squares) are
derived from FFT in Fig. 2. The red line shows a linear fit to
the data with vF= 4.8×105m/s. The error bars represent
the resolution of FFT (see the caption of Fig. 2).
fermions in the ¯
Γ¯
K direction using the interference
patterns and their Fourier transforms. For ~q2, the scat-
tering geometry determines q2=3k[see Fig. 3(a)],
where kis the wave vector in the ¯
Γ¯
K direction at a
given energy. The resulting kvalues vary linearly with
energy [Fig. 3(b)]. The slope of the linear fitting provides
a measurement of the Dirac fermion velocity vF, which
is 4.8×105m/s. In addition, the energy of the Dirac
point is estimated to be 0.25 eV by the intercept of the
dispersion with the energy axis. These observations are
in agreement with the results from the first-principles cal-
culation and the ARPES data [7, 22]. More importantly,
the unoccupied states, which are inaccessible to ARPES,
4
can be probed by the standing waves with STM.
Interference fringes are also found at the step edges on
the surface [29] [Figs. 4(a) to 4(h)]. Similar to the case
of Ag trimmers, the standing waves produced by steps
are predominantly propagating along the ¯
Γ¯
M direc-
tion. The fringes are clearly visible even at the negative
bias voltages probably owing to the stronger scattering
potential compared to that of the Ag trimmers. The dis-
persion curve deduced from these patterns again shows a
linear relation between the scattering wave vector and the
energy [Fig. 4(i)]. Using the slope of the linear fitting to-
gether with the same scattering geometry as that for the
Ag trimmer, the Fermi velocity is found to be 4.8×105
m/s, the same as that obtained from the standing waves
caused by the Ag impurities.
FIG. 4: Standing waves on the upper terrace by a step edge
((a) to (h)). All the images are dI/dV maps at various bias
voltages of an area of 35 nm by 35 nm. Imaging conditions:
I=0.1 nA. (i) Energy dispersion deduced from the standing
waves at the step edge. The dispersion is a function of the
scattering wave vector q. The inserted STM image shows the
step that produces the standing waves in (a) to (h).
The existence of standing wave strongly supports the
surface nature of topological states. An important issue
that immediately arises is whether the topological states
respond differently to the magnetic and the nonmagnetic
impurities. Theoretically, it was pointed out [5, 30, 31]
that a time-reversal breaking perturbation, such as mag-
netic impurities, can induce scattering between the states
|~
k↑i and −|~
k↓i and open up a local energy gap at the
Dirac point. It remains an open question to observe the
distinct signature of time-reversal breaking in topological
insulators.
We thank S.-C. Zhang, X.-L. Qi, Y. Ran and S.-Q.
Shen for valuable discussions. The work is supported
by NSFC and the National Basic Research Program of
China. The STM topographic images were processed us-
ing WSxM (www.nanotec.es).
Note added. At the completion of this manuscript for
submission, we became aware of related work by P. Rou-
san et al. [32]. The authors reported STM study of scat-
tering from disorder in BiSb alloy.
Electronic address: xc@mail.tsinghua.edu.cn
Electronic address: qkxue@mail.tsinghua.edu.cn
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We investigate the topological properties of one-dimensional weakly interacting topological insulators using bosonization. To do that we study the topological edge states that emerge at the edges of a model realized by a strong impurity or at the boundary between topologically distinct phases. In the bosonic model, the edge states are manifested as degenerate bosonic kinks at the boundaries. We first illustrate this idea on the example of the interacting Su-Schrieffer-Heeger (SSH) chain. We compute the localization length of the edge states as the width of an edge soliton that occurs in the SSH model in the presence of a strong impurity. Next, we examine models of two capacitively coupled SSH chains that can be either identical or in distinct topological phases. We find that weak Hubbard interaction reduces the ground-state degeneracy in the topological phase of identical chains. We then prove that, similarly to the noninteracting model, the degeneracy of the edge states in the interacting case is protected by chiral symmetry. We then study topological insulators built from two SSH chains with interchain hopping that represent models of different chiral symmetric universality classes. We demonstrate in bosonic language that the topological index of a weakly coupled model is determined by the type of interchain coupling, invariant under one of two possible chiral symmetry operators. Finally, we show that a general one-dimensional model in a phase with topological index ν is equivalent at low energies to a theory of at least ν SSH chains. We illustrate this idea on the example of an SSH model with longer-range hopping.
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In the ultrathin regime, Bi2Te3 films feature two surfaces (with each surface being a two-dimensional Dirac-fermion system) with complicated spin textures and a tunneling term between them. We find in this regime that the quasiparticle scattering is completely different compared with the thick-film case and even behaves differently at each thickness. The thickness-dependent warping effect and tunneling term are found to be the two main factors that govern the scattering behaviors. The interband backscattering that signals the existence of a tunneling term is found to disappear at four quintuple layers by the step-edge reflection approach. A four-band model is presented that captures the main features of the thickness-dependent scattering behaviors. Our work clarifies that the prohibition of backscattering guaranteed by symmetry in topological insulators breaks down in the ultrathin regime.
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Quantum anomalous Hall (QAH) state in six quintuple layer Cr0.1(Bi0.2Sb0.8)1.9Te3 thin films were studied through scanning tunneling spectroscopy (STS) and electrical transport measurements. While the surface state is gapless above the Curie temperature (TC≈30 K), scanning tunneling spectroscopy (STS) of the sample reveals a topologically nontrivial gap with an average value of ≈13.5 meV at 4.2 K below the ferromagnetic transition. Nonetheless, areal STS scans of the magnetic topological insulator exhibit energy modulations on the order of several meV's in the surface bands, which result in the valence band maximum in some regions becoming higher than the energy of the conduction band minimum of some other regions that are spatially separated by no more than 3 nm. First-principles calculations demonstrate that the origin of the observed inhomogeneous energy band alignment is an outcome of many-body interactions, namely electron-defect interactions and electron-phonon interactions. Defects play the role of locally modifying the energy landscape of surface bands while electron-phonon interactions renormalize the surface bands such that the surface gap becomes reduced by more than 1 meV as temperature is raised from 0 to 4.2 K. These many-body interactions at a finite temperature result in substantial increase of electron tunneling across the spatially separated conduction band pockets even for finite temperatures well below TC, thus driving the magnetic topological insulator out of its QAH insulating phase into a metallic phase at a relatively low temperature.
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Nontrivial surface states in topological materials have emerged as exciting targets for surface chemistry research. In particular, topological insulators have been utilized as electrodes in electrocatalytic reactions. Herein, we investigate the robustness of topological surface states and band topology under electrochemical conditions, specifically in the presence of an electric double layer. First-principles band structure calculations are performed on the electrified (001) surfaces of Bi2Te3, Bi2Se3, and Sb2Te3 using an implicit electrolyte model. Our results demonstrate the adiabatic evolution of the surface states upon surface charging. Under oxidizing potentials, the surface states are shifted upward in energy, preserving the Dirac point on the surface and the band inversion in the bulk. Conversely, under reducing potentials, hybridization is observed between the surface and bulk states, suggesting a likely breakdown of topological protection. The position of the Fermi level, which dictates the working states in catalytic reactions, should ideally be confined within the bulk bandgap. This requirement defines a potential window for the effective application of topological electrocatalysis.
Chapter
A topological insulator is an area that has yet to be fully explored and developed. The charge-induced bandgap fluctuation in the best-known bismuth-chalcogenide-based topological insulators is approximately 10MeV in magnitude. The major focus has shifted to the investigation of the presence of high-symmetry electronic bands as well as the utilization of easily produced materials. As the subject of topological insulators is still in the nascent stage, there is growing research and knowledge in the emerging field. This book is intended to provide the readers with an understanding of the needs and application of these materials.
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Quantum corrals are two-dimensional structures built atom by atom on an atomically clean metallic surface using a scanning tunneling microscope (STM). These two-dimensional structures ``corral'' electrons in the surface states of noble metals, leading to standing-wave patterns in the electron density inside the quantum corral. The authors review the physics of quantum corrals and relate the signal of the STM to the scattering properties of substrate electrons from atomic impurities supported on the surface. The theory includes the effects of incoherent surface-state electron scattering at the impurities and quantitively describes nearly all of the current STM data on quantum corrals, including the recent quantum mirage experiments with Kondo effect. The physics underlying the recent mirage experiments is discussed, as are some of the outstanding questions regarding the Kondo effect from impurities in nanoscale structures on metallic surfaces. The authors also summarize recent work on variations of ``quantum'' corrals: Optical corrals and acoustical corrals.
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Recent experiments and theories have suggested that strong spin-orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks. It has been proposed that a topological insulator with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.
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Scanning tunneling spectroscopy images of Bi2Se3 doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in Bi2Se3 can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.
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The growth and elementary properties of p-type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3, the p-type behavior has been induced through low-level substitutions (1% or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle-resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98Ca0.02Se3 relative to the n-type material. p-type single crystals with ab-plane Seebeck coefficients of +180 μV/K at room temperature are reported. These crystals show an anomalous peak in the Seebeck coefficient at low temperatures, reaching +120 μV K−1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p-type Bi2Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.
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The quasiparticle interference of the spectroscopic imaging scanning tunneling microscopy has been investigated for the surface states of the large gap topological insulator Bi2Te3 through the T-matrix formalism. Both the scalar-potential scattering and the spin-orbit scattering on the warped hexagonal isoenergy contour are considered. While backscatterings are forbidden by time-reversal symmetry, other scatterings are allowed and exhibit strong dependence on the spin configurations of the eigenfunctions at k⃗ points over the isoenergy contour. The characteristic scattering wave vectors found in our analysis agree well with recent experiment results.
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Scanning tunneling spectroscopy of Bi2Se3 and Bi2Te3 layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.
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Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin–orbit coupling. So far, the only known three-dimensional topological insulator is BixSb1-x, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Sb2Se3, Bi2Te3 and Bi2Se3. Our calculations predict that Sb2Te3, Bi2Te3 and Bi2Se3 are topological insulators, whereas Sb2Se3 is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the point. In addition, we predict that Bi2Se3 has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.
Article
We study the proximity effect between an s-wave superconductor and the surface states of a strong topological insulator. The resulting two dimensional state resembles a spinless p_x+ip_y superconductor, but does not break time reversal symmetry. This state supports Majorana bound states at vortices. We show that linear junctions between superconductors mediated by the topological insulator form a non chiral 1 dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating and fusing Majorana bound states.
Article
ELECTRONS occupying surface states on the close-packed surfaces of noble metals form a two-dimensional nearly free electron gas1-3. These states can be probed using the scanning tunnelling microscope (STM), providing a unique opportunity to study the local properties of electrons in low-dimensional systems4. Here we report the direct observation of standing-wave patterns in the local density of states of the Cu(111) surface using the STM at low temperature. These spatial oscillations are quantum-mechanical interference patterns caused by scattering of the two-dimensional electron gas off step edges and point defects. Analysis of the spatial oscillations gives an independent measure of the surface state dispersion, as well as insight into the interaction between surface-state electrons and scattering sites on the surface.
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We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.