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Topic: Nanotechnology for Energy and Environment Presentation Type: Poster Improved Efficiency of Silicon Heterojunction Solar Cell with Anti-Reflective Coating Layer and Nanostructure Decoration

Authors:
Emre Kartal at Ömer Halisdemir University
Emre Kartal
Ayse Seyhan at Nigde Ömer Halisdemir University, Turkey
Ayse Seyhan
  • Nigde Ömer Halisdemir University, Turkey
Filiz Keleş
Filiz Keleş
Filiz Keleş
  • This person is not on ResearchGate, or hasn't claimed this research yet.
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Abstract

Text Improving the photoconversion efficiency is extremely crucial in renewable energy industry. It is required for a high efficient photovoltaic to absorb the great portion of sunlight and convert the photogenerated charge carriers effectively into the electricity. In this regard, the silicon heterojunction (HJT) emerges as a good candidate to be used in photovoltaic area [1] since it has many advantages such as low temperature process, large area application and low cost production [2]. Silicon HJT solar cell was pioneered by Sanyo [3] in its early stages and has been steadily improved so that its efficiency has been reported over 26% recently [4]. In this study, we aimed to improve further the efficiency of the silicon HJT solar cell by using a textured substrate in order to enhance the optical absorption. Moreover, we synthesised the nanostructures on pyramidal features by immersing the silicon substrates into the solution of hydrofluoric (HF) acid and silver nitride (AgNO3) following the standard RCA cleaning procedure. The flower-like formation of the nanostructure found on a pyramid is apparent as shown in figure below. The nanotextured HJT silicon solar cell demonstrated a photoconversion efficiency higher than 15% which is quite promising. Figure. Flower-like formation on silicon pyramid
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ID:!97!
Topic:!Nanotechnology for Energy and Environment!
Presentation Type:!Poster!
Improved Efficiency of Silicon Heterojunction Solar Cell with Anti-Reflective Coating Layer and
Nanostructure Decoration!
Emre KARTAL,!Ayşe SEYHAN, Filiz KELEŞ!
Nigde Ömer Halisdemir Unv, Physics, Nigde!
*Corresponding Author (ayseyhan@gmail.com)!
!
!
Abstract Text!
Improving the photoconversion efficiency is extremely crucial in renewable energy industry. It is required for a
high efficient photovoltaic to absorb the great portion of sunlight and convert the photogenerated charge carriers
effectively into the electricity. In this regard, the silicon heterojunction (HJT) emerges as a good candidate to be
used in photovoltaic area [1] since it has many advantages such as low temperature process, large area
application and low cost production [2]. Silicon HJT solar cell was pioneered by Sanyo [3] in its early stages and
has been steadily improved so that its efficiency has been reported over 26% recently [4].!
In this study, we aimed to improve further the efficiency of the silicon HJT solar cell by using a textured
substrate in order to enhance the optical absorption. Moreover, we synthesised the nanostructures on pyramidal
features by immersing the silicon substrates into the solution of hydrofluoric (HF) acid and silver nitride
(AgNO3) following the standard RCA cleaning procedure. The flower-like formation of the nanostructure found
on a pyramid is apparent as shown in figure below. The nanotextured HJT silicon solar cell demonstrated a
photoconversion efficiency higher than 15% which is quite promising.!
!
Figure. Flower-like formation on silicon pyramid!
We also deposited the ITO layer as an anti-reflective coating on the textured silicon substrate before the
nanostructure synthesis. The ITO layer grown by high pressure sputter (HIPS) is known for its suitability to be
used in efficient light absorbing materials [5]. We observed that a more homogenous nanostructure formation
was obtained when HIPS-ITO layer was applied. The improvement of the optical properties in addition to the
electrical properties in this configuration makes us to expect greatly enhanced conversion efficiency of silicon
HJT based solar cell.!
Reference!
[1] https://pvlab.epfl.ch/heterojunction_solar_cells!
[2] A. Descoeudres, et al. Energy Procedia 77, 508-514, (2015).!
[3] M. Taguchi, et al. Proc. Int. Photovoltaic Sci. Eng. Conf.-5 Tech. Dig., 689–692, (1990).!
[4] K. Yoshikawa , et al. Nature Energy 2, 17032, (2017).!
[5] F. Keles et al. Nanotechnology, 28, 335703, (2017).!
!
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Silicon Heterojunction Solar Cells: Towards Low-cost High-Efficiency Industrial Devices and Application to Low-concentration PV
Article
Full-text available
  • Aug 2015
The silicon heterojunction (SHJ) technology has already proven its ability to produce high-efficiency devices, and very competitive production costsat the mass production level can be potentially reached by integrating latest developments. In this work, several of such technology developments are presented related to the PECVD and metallization steps. PECVD processes were developed in a large-area reactor, showing excellent thickness uniformity over the full reactor area (< 4%) and state-of-the-art passivation level (> 16ms). Improvements in screen-printing permitted to reduce the finger width down to 40μm. A 21.9% 6-inch busbar-less cell with only 25mg of Ag was produced, resulting in Ag cost of only 0.22 €cts/Wp. A complete SHJ process for full-area 6-inch cells has been established using industry-compatible processes, with a record efficiency of 22.8% and Vocs above 740mV (CZ n-type). The use of 4 cm2 SHJ cells for low-concentration applications was investigated at different illumination levels and temperatures. With optimized front grid designs (Cu electro-plated fingers), efficiencies can be maintained around 20% at 10 suns. Thanks to a temperature-assisted improvement in carrier transport, the cell temperature coefficient improves with illumination, showing even positive values above 35 suns. This suggests a strong potential of SHJ cells for low-concentration PV.
View
  • Jan 2017
  • Nat. Energy.
  • 17032
  • K Yoshikawa
K. Yoshikawa, et al. Nature Energy 2, 17032, (2017).
  • Jan 2017
  • NANOTECHNOLOGY
  • F Keles
F. Keles et al. Nanotechnology, 28, 335703, (2017).