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A High‐Performance Self‐Powered Photodetector Based on MAPbBr3 Single Crystal Thin Film/MoS2 Vertical Van Der Waals Heterostructure

Advanced Materials Interfaces

August 2022
9(27)

DOI:10.1002/admi.202200912

Authors:

Fanxu Meng

Southeast University (China)

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Methylammonium lead bromide (MAPbBr3) single crystal thin film shows great opportunities in high‐performance optoelectronic devices due to its high absorption coefficient, high photoelectric conversion efficiency, and low trap‐state density properties. In order to fabricate a highly sensitive self‐powered photodetectors, herein, a MAPbBr3 single crystal thin film/molybdenum disulfide (MoS2) vertical p‐n heterostructure based photodetector has been built by typical polymer film assisted dry transfer method and micromachining technique. Attributing to the built‐in electric field and the shortened transmit distance for the photogenerated carriers in this heterostructure, the device shows excellent photovoltaic characteristics with a maximum output electrical power of 7 nW and power conversion efficiency of 8% at 0.34 V under 532 nm laser. Moreover, prominent photoelectric properties with responsivity of 368 mA W−1 and detectivity of 3.74 × 1012 Jones for 532 nm laser without any bias have been achieved, which are ranking high among the organic–inorganic hybrid perovskites based self‐power photodetectors. These results demonstrate that the MAPbBr3 single crystal thin film/MoS2 vertical heterostructure can pave a new way to develop high‐performance photovoltaic devices. A methylammonium lead bromide single crystal thin film/molybdenum disulfide (MoS2) vertical p‐n heterostructure based photodetector has been built, which shows excellent photovoltaic characteristics with power conversion efficiency of 8% and prominent photoelectric properties with responsivity of 368 mA W−1 under 532 nm laser, resulting from the built‐in electric field and the shortened transmit distance for the photogenerated carriers in this heterostructure.

Structure, characterization, and band diagram of the photodetector. a) Diagram of the MAPbBr3/MoS2 vertical heterostructure device. From the top to the bottom are Au electrode, few‐layer graphene, MAPbBr3 single crystal thin film, MoS2 flake, and Au electrode. b) Optical microscope image of the MAPbBr3/MoS2 device. The scale bar is 10 µm. c) Surface potential difference for Au, MAPbBr3, and few‐layer graphene. Inset: KPFM image of MAPbBr3/MoS2 vertical heterostructure device surface corresponding to the red square area of (b). d) Band diagram of few‐layer graphene, MAPbBr3 single crystal thin film, MoS2 flake, and Au before contact.

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The photoresponse properties of the device are under 532 nm. a) Current‐bias curves of the device under various light illumination power densities for 532 nm. b) Photocurrents (Iph) under various light illumination powers (Popt) for 532 nm at bias = 0 V. c) Open‐circuit voltage (Voc) and short‐circuit current (Isc) as a function of incident power for 532 nm. d) Electrical power under various light illumination power densities for 532 nm. e) Responsivity and external quantum efficiency as a function of light illumination power density at bias = 0 V for 532 nm. f) Detectivity and Iph/Idark as a function of light illumination power density at bias = 0 V for 532 nm.

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The temporal characteristics of the device. a) The response of the device under various light illumination power densities for 532 nm at bias = 0 V. b) Response time of the device under 0.01 mW cm⁻² for 532 nm at bias = 0 V.

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The photoresponse performance and the operating principle of the device under various wavelength lasers with the same light illumination power density (0.01 mW cm⁻²) at bias = 0 V. a) The temporal characteristics of the device under different lasers for 405 (violet), 532 (green), 655 (red), and 808 nm (brown). b) Rise time and fall time of the device under different lasers for 405, 532, 655, and 808 nm. c) Responsivity and external quantum efficiency of the device under different lasers for 405, 532, 655, and 808 nm. d) Detectivity and Iph/Idark of the device under different lasers for 405, 532, 655, and 808 nm. e) Band diagram of MAPbBr3/MoS2 under the laser for 405 nm or 532 nm at bias = 0 V. f) Band diagram of MAPbBr3/MoS2 under the laser for 655 nm or 808 nm at bias = 0 V.

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A High-Performance Self-Powered Photodetector Based on

MAPbBr3 Single Crystal Thin Film/MoS2 Vertical Van Der

Waals Heterostructure

Zhongquan Xu, Yonghong Zeng, Fanxu Meng, Shan Gao, Sidi Fan, Yi Liu, Yule Zhang,

Swelm Wageh, Ahmed A. Al-Ghamdi, Jing Xiao,* Zhinan Guo,* and Han Zhang

DOI: 10.1002/admi.202200912

photoelectric characteristic, such as direct

bandgap,[1–3] high absorption coecient,[4]

high photoelectric conversion eciency,[5,6]

and long carrier diusion length.[7,8] Ini-

tially, organic–inorganic hybrid perovskite

nanocrystals have been applied as sensi-

tive materials for photodetectors by spin-

coating them into polycrystalline ﬁlms,

which exhibit considerable open-circuit

voltage (Voc) and high power conversion

eciency (PCE).[9–11] However, due to the

excessive grain boundaries and defects in

the ﬁlm, it is hard for the polycrystalline

thin ﬁlm-based photo detectors to get rid of

the low carrier transport eciency and the

instability.[12,13]

In 2015, Dang et al. took the ﬁrst trial

to grow perovskite bulk single crystal with

the lower density of trap states, fewer grain

boundaries, and longer carrier diusion

distance compared with the polycrystal-

line thin ﬁlm.[14] Then, photodetector based

on the methylammonium lead bromide

perovskite (MAPbBr3) bulk single crystal

was then fabricated by Liu et al. achieving a high responsivity

(60 A W−1) better than the vast majority of polycrystalline thin-

ﬁlm based photodetectors.[15] However, due to the macroscopic

thickness of the bulk single crystal, a long transit time and a high

recombination probability for carriers would exist in the device,

Methylammonium lead bromide (MAPbBr3) single crystal thin ﬁlm shows

great opportunities in high-performance optoelectronic devices due to its

high absorption coecient, high photoelectric conversion eciency, and

low trap-state density properties. In order to fabricate a highly sensitive

self-powered photodetectors, herein, a MAPbBr3 single crystal thin ﬁlm/

molybdenum disulﬁde (MoS2) vertical p-n heterostructure based photo-

detector has been built by typical polymer ﬁlm assisted dry transfer method

and micro machining technique. Attributing to the built-in electric ﬁeld and

the shortened transmit distance for the photogenerated carriers in this het-

erostructure, the device shows excellent photovoltaic characteristics with a

maximum output electrical power of 7 nW and power conversion eciency of

8% at 0.34V under 532nm laser. Moreover, prominent photoelectric proper-

ties with responsivity of 368mA W−1 and detectivity of 3.74 × 1012 Jones for

532nm laser without any bias have been achieved, which are ranking high

among the organic–inorganic hybrid perovskites based self-power photo-

detectors. These results demonstrate that the MAPbBr3 single crystal thin

ﬁlm/MoS2 vertical heterostructure can pave a new way to develop high-

performance photovoltaic devices.

Z. Xu, Y. Zeng, S. Fan, Y. Liu, Y. Zhang, Z. Guo, H. Zhang

Institute of Microscale Optoelectronics

International Collaborative Laboratory of 2D Materials for Optoelectronic

Science and Technology

College of Physics and Optoelectronic Engineering

Shenzhen University

Shenzhen 518060, P. R. China

E-mail: guozhinan@szu.edu.cn

F. Meng

Center of Characterization and Analysis

College of Science

Jilin Institute of Chemical Technology

Jilin 132022, P. R. China

S. Gao

Department of Chemistry and Center of Super-Diamond and Advanced

Films (COSDAF)

City University of Hong Kong

Kowloon, Hong Kong 999077, P. R. China

S. Wageh, A. A. Al-Ghamdi

Department of Physics

Faculty of Science

King Abdulaziz University

Jeddah 21589, Saudi Arabia

J. Xiao

College of Physics and Electronic Engineering

Taishan University

Taian, Shandong 271000, P. R. China

E-mail: xiaojingzx@163.com

ReseaRch aRticle

The ORCID identiﬁcation number(s) for the author(s) of this article

can be found under https://doi.org/10.1002/admi.202200912.

1. Introduction

Organic–inorganic hybrid perovskites, a light-harvesting

material, has been widely applied in the ﬁeld of optoelec-

tronic devices like photodetectors due to their outstanding

Adv. Mater. Interfaces 2022, 9, 2200912

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We have fabricated planar interdigitated photodetectors exhibiting high responsivity. These detectors are based on thin layers of methylammonium lead bromide (MAPbBr3) at 90 nm thickness. MAPbBr3 thin films were first characterized on glass (borosilicate) substrates using absorption and photoluminescence measurements showing a high absorption edge at 521 nm and strong emission at 530 nm, as expected. MAPbBr3 thin films were then deposited on top of interdigitated electrodes, hence producing planar photodetectors with responsivity up to 0.4 A/W. Such higher performances were attributed to the interdigitated design, low crack density (0.05 µm−2), and lower resistivity (20 MΩ.cm) compared to MAPbBr3 single crystal. Therefore, this work highlights MAPbBr3 thin films as very promising for photodetection applications.

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In general, self-powered photodetectors are tedious and costly. Here, high-performance self-powered visible photodetectors based on MAPbI 3 films were fabricated by using asymmetric Au electrodes. For this construction of photodetector, the illumination passing through the translucent MAPbI 3 film can reduce the Schottky barrier between the lower electrode and perovskite, and the Au particles doping into the MAPbI 3 at the contact areas between the upper electrode and films can also change the Schottky barrier, which leads to the formation of built-in potential. Without an applied bias, the photodetectors exhibit an ultralow dark current of $\sim 3$ pA. At the power intensity of 2.92 mW/cm 2 under 635 nm illumination, a decent responsivity of 10 mAW −1 , a high specific detectivity of $3.3 \times 10^{11}$ cmHz 1 /2W −1 , and an external quantum efficiency of 2.1% are obtained. The on/off ratio reaches 10 4 and the response speed is less than 50 ms. Our results pave a new design concept to form a self-powered perovskite-based photodetector.

A High‐Performance Self‐Powered Photodetector Based on MAPbBr3 Single Crystal Thin Film/MoS2 Vertical Van Der Waals Heterostructure

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