A Common-Gate Current-Reuse UWB LNA for Wireless Applications in 90 nm CMOS

Abstract

In this paper, a CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications is presented. The proposed CMOS LNA is designed using common-gate (CG) topology at the first stage to achieve ultra wideband input matching. The common-gate has been cascaded with common-source (CS) current-reused configuration to enhance the gain and noise figure (NF) performance of the LNA with low power consumption. In order to ensure maximum power flow from CG input stage to gm boosted CS current-reused stage, parallel-series LC matching has been used. The output-matching network is used to improve the output reflection coefficient. The LNA is designed using standard 90 nm CMOS process for 3.1–10.6 GHz UWB. It exhibits a power-gain (S21) of 19.2–20.8 dB, an NF of 2.3–3.7 dB, a reverse-isolation (S12) of less − 53.8 dB and an S22 of less than − 6 dB for the entire UWB frequency range. The proposed LNA has an input reflection coefficient (S11) of less than − 10.6 dB for 3.1–10.6 GHz. It achieves input 1-dB compression point (P1dB) of − 17 dBm at 6 GHz and input third-order intercept point (IIP3) of − 8 dBm, while it consumes only 5.05 mW of power from a Vdd supply of 0.7 V.

Full text

Vol.:(0123456789)
Wireless Personal Communications (2021) 119:1405–1423
https://doi.org/10.1007/s11277-021-08287-5
1 3
A Common‑Gate Current‑Reuse UWB LNA forWireless
Applications in90nm CMOS
VikramSingh1,3 · SandeepKumarArya1· ManojKumar2
Accepted: 11 February 2021 / Published online: 24 February 2021
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021
Abstract
In this paper, a CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless
applications is presented. The proposed CMOS LNA is designed using common-gate (CG)
topology at the first stage to achieve ultra wideband input matching. The common-gate
has been cascaded with common-source (CS) current-reused configuration to enhance the
gain and noise figure (NF) performance of the LNA with low power consumption. In order
to ensure maximum power flow from CG input stage to gm boosted CS current-reused
stage, parallel-series LC matching has been used. The output-matching network is used
to improve the output reflection coefficient. The LNA is designed using standard 90nm
CMOS process for 3.1–10.6GHz UWB. It exhibits a power-gain (S21) of 19.2–20.8dB, an
NF of 2.3–3.7dB, a reverse-isolation (S12) of less − 53.8dB and an S22 of less than − 6dB
for the entire UWB frequency range. The proposed LNA has an input reflection coefficient
(S11) of less than − 10.6dB for 3.1–10.6GHz. It achieves input 1-dB compression point
(P1dB) of − 17dBm at 6GHz and input third-order intercept point (IIP3) of − 8dBm,
while it consumes only 5.05mW of power from a Vdd supply of 0.7V.
Keywords Common-gate· Current-reuse· Input-matching· Low noise amplifier· UWB·
Wireless communication
1 Introduction
The continuously emerging new applications of wireless communication devices lead to
the development of communication systems with low power consumption, high data rate
and wider bandwidth. Simultaneously in 2002, Federal Communications Commission
(FCC) [1] releases 3.1–10.6GHz frequency spectrum for unlicensed operations and attract
researchers and engineers to design communication devices for UWB frequency. In last
* Vikram Singh
vikram.singh@smvdu.ac.in
1 Department ofElectronics andCommunication Engineering, Guru Jambheshwar University
ofScience & Technology, Hisar, Haryana, India
2 University School ofInformation, Guru Gobind Singh Indraprastha University, Communication &
Technology, NewDelhi, India
3 Shri Mata Vaishno Devi University, Katra,JammuandKashmir, India
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