A preview of this full-text is provided by Wiley.
Content available from Advanced Materials
This content is subject to copyright. Terms and conditions apply.
2003309 (1 of 42) © 2020 Wiley-VCH GmbH
www.advmat.de
Review
Low-Dimensional Metal Halide Perovskite Photodetectors
Hsin-Ping Wang, Siyuan Li, Xinya Liu, Zhifeng Shi, Xiaosheng Fang,* and Jr-Hau He*
Dr. H.-P. Wang, Prof. J.-H. He
Department of Materials Science and Engineering
City University of Hong Kong
Tat Chee Avenue, Kowloon, Hong Kong
E-mail: jrhauhe@cityu.edu.hk
S. Y. Li, X. Y. Liu, Prof. X. S. Fang
Department of Materials Science
Fudan University
Shanghai 200433, P. R. China
E-mail: xshfang@fudan.edu.cn
Prof. Z. F. Shi
Key Laboratory of Materials Physics of Ministry of Education
School of Physics and Microelectronics
Zhengzhou University
Daxue Road 75, Zhengzhou 450052, P. R. China
The ORCID identification number(s) for the author(s) of this article
can be found under https://doi.org/10.1002/adma.202003309.
DOI: 10.1002/adma.202003309
charge carrier collection. Nowadays,
PDs detecting in the UV–visible to near-
infrared (NIR) spectrum range are mainly
based on crystalline inorganic elemental
semiconductors, such as Si, III–V and
II–VI semiconductors, and their hetero-
junctions.[5,6] These PDs have been fully
investigated and mature, but they usually
have complicated structures and require
high-temperature and complex fabrication
processes, such as metal-organic chemical
vapor deposition (MOCVD) and molec-
ular-beam epitaxy (MBE), leading to high
cost. Moreover, the mechanical inflexibility
of materials limits their broader applica-
tions for large-area and flexible PDs.
PDs made by solution-processed semi-
conductors have recently emerged as a
potential candidate for next-generation
light sensors.[3,7–9] Among them, metal
halide perovskites (MHPs) have been
sparking wide interest for optoelectronic
devices because they hold several advan-
tages over traditional materials such as the simplicity of their
processing (e.g., solution deposition), high absorption coef-
ficient, weakly bound excitons, long carrier lifetime >1ms in
polycrystalline films, and tunable bandgap between 1.48 and
2.23eV.[10–14] Ballif’s group found a high absorption coecient
of MAPbI3 (MA = methylammonium) perovskite with particu-
larly sharp onset and discussed the relation between sharp
optical absorption edge and its photovoltaic performance.[15]
MHPs exhibit a much higher absorption coecient than
crystalline Si and show an exponential trend over more than
four decades with an Urbach energy of 15 meV for MAPbI3
and as low as 13 meV for MAPbBr3, which is comparable to
III–V materials (e.g., Urbach energy of GaAs is 7 meV).[12,15]
The low value of Urbach energy indicates a very low degree
of structural disorder and high crystallinity of MHP crystals.
The purely exponential optical absorption edge strongly sug-
gests no apparent presence of deep states within the bandgap,
which is likely a key factor why MHPs can feature such great
optoelectronic performance compared to other materials.[12,16]
In brief, MHPs have attracted considerable attention because
of such superb optoelectronic properties comparable to III–V
materials but much cost-eective fabrication processes. These
advantages make researchers believe perovskites could also
be a good candidate for future PDs. Encouragingly, polycrys-
talline MHP PDs exhibit comparable or even better perfor-
mance than those traditional single-crystalline semiconductors
(Si, Ge, etc.) and high-temperature epitaxial semiconductor
PDs (InGaAs, HgCdTe, etc.) due to their great optoelectronic
Metal halide perovskites (MHPs) have been a hot research topic due to their
facile synthesis, excellent optical and optoelectronic properties, and record-
breaking eciency of corresponding optoelectronic devices. Nowadays, the
development of miniaturized high-performance photodetectors (PDs) has been
fueling the demand for novel photoactive materials, among which low-dimen-
sional MHPs have attracted burgeoning research interest. In this report, the
synthesis, properties, photodetection performance, and stability of low-dimen-
sional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as
well as their heterostructures are reviewed. Recent advances in the synthesis
approaches of low-dimensional MHPs are summarized and the key concepts
for understanding the optical and optoelectronic properties related to the PD
applications of low-dimensional MHPs are introduced. More importantly,
recent progress in novel PDs based on low-dimensional MHPs is presented,
and strategies for improving the performance and stability of perovskite PDs
are highlighted. By discussing recent advances, strategies, and existing chal-
lenges, this progress report provides perspectives on low-dimensional MHP-
based PDs in the future.
1. Introduction
Photodetectors (PDs), which convert optical signals to electrical
signals, have wide applications in many fields, such as optical
communication, image sensing, environmental monitoring,
and sensing in the Internet of Things (IoT).[1–4] An ecient
PD requires high responsivity (R), high detectivity (D*), on/o
ratio, and fast response speed. To realize these characteristics,
the active layers in PDs must have a high absorption coecient,
low trap-state density (ntrap), high carrier mobility, and ecient
Adv. Mater. 2021, 33, 2003309