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Growth of GaN by MOCVD
Abstract
GaN is an important semiconductor material operating in the blue light range. GaN epitaxial layer was successfully achieved by MOCVD with TMGa and NH 3 as sources on (0112) α-Al 2O 3 substrate. The morphorlogical, crystalline, electrical and optical characterizations of the GaN film were investigated. The minimum FWHM of (2110) peak of double crystal X-ray diffraction rocking curve is 16'. Near ultraviolet and visible light are observed by cathode luminescence.
The flow field in metal organic chemical vapor deposition (MOCVD) reactor is simulated three-dimensionally by computational fluid dynamics (CFD) theory. The governing equations are discretized with the finite volume method based on the non-stagger grids system and are solved by the SIMPLE scheme and the improved pressure-velocity method. How the different working parameters affect the flow patterns in the MOCVD reactor is studied in this paper. The geometric structure and inflow pattern of a MOCVD reactor which is under trial-production are improved in order to provide steady and uniform flow field and improve the quality of GaN films.
Computational fluid dynamics (CFD) simulation is performed to study the flow dynamics in the metal-organic chemical vapor deposition (MOCVD) reactor. The numerical code is based on the SIMPLE scheme with the non-stagger grids system. The improved pressure-velocity method by Rhie and Chow is adopted to avoid unreasonable pressure fluctuation. The governing equations are discretized with a finite volume method. CFD simulation gives the flow structures in the planetary MOCVD reactor which has complex geometrical structures and motion style. The effect of the different geometrical size and working parameters on the flow patterns in the MOCVD reactor is studied. The CFD simulation results give constructive suggestion to the configuration design and the parameter optimization of the MOCVD reactor.
Two-dimensional numerical study on transport process in a radial flow MOCVD reactor with three-separate vertical inlets was conducted. The inflence of operating parameters on concentration of NH3 and TMGa at susceptor surface was investigated. It is found that uniform flow fields and reducing the pressure correspond to higher susceptor concentration. Thermal diffusion is a assignable factor because of large thermal gradient taking place in MOCVD system.
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