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Thermoelectric generators: Linking material properties and systems engineering for waste heat recovery applications

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Waste-heat recovery with thermoelectric power generators can improve energy efficiency and provide distributed electricity generation. New thermoelectric materials and material performance improvements motivate development of thermoelectric generators for numerous applications with excess exhaust and process heat. However, thermoelectric generator product development requires solving coupled challenges in materials development and systems engineering. This review discusses these challenges and indicates ways system-level performance relies on more factors than traditional thermoelectric material performance metrics alone. Relevant thermo-mechanical and chemical material properties, system components such as thermal interface materials and heat exchangers, and system form factors are examined. Manufacturing processes and total system cost components are evaluated to provide product development and commercial feasibility contexts.
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Thermoelectric generators: Linking material properties and systems
engineering for waste heat recovery applications
Saniya LeBlanc
Department of Mechanical & Aerospace Engineering, The George Washington University, Washington, DC 20052, USA
abstractarticle info
Article history:
Received 24 September 2014
Received in revised form 4 November 2014
Accepted 13 November 2014
Available online 20 November 2014
Keywords:
Thermoelectric generator
Waste heat recovery
Thermoelectric system
Thermoelectric manufacturing
Thermoelectric power generation
Waste-heat recoverywith thermoelectric power generators can improve energy efciencyand provide distribut-
ed electricity generation. New thermoelectric materials and material performance improvements motivate de-
velopment of thermoelectric generators for numerous applications with excess exhaust and process heat.
However,thermoelectric generator productdevelopment requires solving coupled challenges in materialsdevel-
opment andsystems engineering. This reviewdiscusses thesechallenges and indicates ways system-levelperfor-
mance relies on more factors than traditional thermoelectric material performance metrics alone. Relevant
thermo-mechanical and chemical material properties, system components such as thermal interface materials
and heat exchangers, and system form factorsare examined. Manufacturing processes and total system costcom-
ponents are evaluated to provide product development and commercial feasibility contexts.
© 2014 The Author. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license
(http://creativecommons.org/licenses/by-nc-nd/3.0/).
1. Introduction
Thermoelectric devices offer a unique power generation solution be-
cause they convert thermal energy into electricity without requiring
moving components. Thermoelectric generators have been proposed
for waste-heat recovery applications, and advancements in thermoelec-
tric materials development have highlighted thetechnology's energy ef-
ciency and commercial potential. To realize this potential and improve
thermoelectric power generation feasibility, the gap between thermo-
electric materials development and generator systems engineering
must be closed. The thermoelectric generator materials characteristics
are particularly important because it is a solid-state energy conversion
device. Electron and thermal transport through multiple materials in
the device is paramount and affects overall system performance. This
review provides a systems-level perspective of thermoelectric genera-
tor development. It underscores the relationships between thermoelec-
tric materials development goals and generator system requirements.
Considerations for system components beyond the thermoelectric ma-
terials are discussed along with manufacturing and cost issues.
A thermoelectric (TE) module consists of units, or legs, of n- and p-
type semiconducting materials connected electrically in series and ther-
mally in parallel. The gure of merit ZT describes material performance.
It depends on the thermoelectric material properties Seebeck coef-
cient S, electrical conductivity σ, and thermal conductivity k,and
ZT =S
2
σT/kwhere Tis the temperature of the material. A TE couple
is one pair of n- and p-type legs, and a module generally has several
couples. These couples and their electrical interconnects are enclosed
by an electrical insulator, typically a ceramic. A typical off-the-shelf
module is shown in Fig. 1. As depicted in Fig. 2, a thermoelectric gener-
ator (TEG)is usually a more extensive systemthan the module. In a TEG,
the modules are connected thermally in parallel with heat exchangers
to facilitate the transfer of heat from the heat source to the module's
hot side and away from its cold side. The modules are connected to an
electrical load to close the circuit and enable electricity extraction.
Thermoelectric generators have been used to power space vehicles
for several decades [1,2], so the research and development contribu-
tions and expertise from the space industry are invaluable in the devel-
opment of terrestrial waste-heat recovery TEGs. Named radioisotope
thermoelectric generators (RTGs), the heat source in spacecraft TEGs
comes from the nucleardecay of radioactive isotopes.RTGs were select-
ed to power space vehicles since they are highly reliable, robust, and
compact. They are solid-state devices without the rotating machinery
typical of other heat engines, so RTGs do not produce noiseor vibration.
These qualities made RTGs ideal for powering autonomous space vehi-
cles with long life missions. RTGs for space power systems have unique
characteristics which differentiate this application from the waste-heat
recovery applications discussed here. The heat source temperature is
typically higher (~1000 °C) resulting in the use of thermoelectric mate-
rials suchas silicon germanium which are suitable for high temperature
power generation. The operating environments are outer space and
other planetary surfaces. Moreover, the costperformance consider-
ations and constraints for space vehicle development are signicantly
different than for waste-heat recovery applications since signicant
Sustainable Materials and Technologies 12(2014)2635
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E-mail address: sleblanc@gwu.edu.
http://dx.doi.org/10.1016/j.susmat.2014.11.002
2214-9937/© 2014 The Author. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).
Contents lists available at ScienceDirect
Sustainable Materials and Technologies
value is placed on the RTG primary power generation capability and
unique suitability for the requirements of space applications.
From electronics to industrial furnaces, numerous waste-heat
sources at low- (b250 °C), mid- (~250-650 °C), and high- (N650 °C)
temperatures exist. TEGs have mostly been proposed for waste-heat re-
covery in mid- and high-temperature applications such as automotive,
engine, and industrial applications with untapped exhaust and process
heat because of the potential for appreciable power generation [35].
The mid- to high-temperature exhaust and process heat types of appli-
cations are the focus of the discussion here, and sample heat source
temperatures and applications are shown in Table 1. Vehicle applica-
tions include passenger vehicles and large trucks, and prototypes have
already been demonstrated [5,6]. There are a myriad of industrial pro-
cesses such as steel making and glass melting, and a comprehensive as-
sessment of industrial waste-heat opportunities in the United States
was conducted in 2008 [3]. The study notably indicated that thermo-
electric generation had not been demonstrated in U.S. industrial
applications. In Asia, particularly Japan, there have been multiple dem-
onstrations of TEG waste-heat recovery [7,8] with a recently deployed
TEG generating 250 W from a steel casting line [9].
As in space applications, key advantages of TEGs for waste-heat
recovery are their simplicity, minimal maintenance requirements, and
reliability since there is no rotatingmachinery in the system. Disadvan-
tages include low efciencies, high costs, and systems integration
barriers. The assessment for TEG waste-heat recovery potential often
focuses on the heat source temperature where high-temperature pro-
cesses are favorable. Government-initiated studies and funding for
TEGs reect the interest in these promising, high-temperature industri-
al process applications. Additionally, a crucial consideration for TEG
product development and commercial viability is identifying the appro-
priate t between the productand potential markets [12]. The commer-
cial drivers for productmarket t can lead to preference for mid-
temperature applications over high-temperature applications. This
productmarket t is closely related to practical materials development
and systems engineering needs which do not necessarily correlate to
obtaining higher material ZT values.
The following discussion provides key points about the link between
TEG material properties and system performance. The target readers for
this overview are those who are outside the hermoelectrics research
and development community and/or want to understand overarching
key issues with thermoelectric materials and systems development.
Readers whoare interested in the extensive literature on thermoelectric
materials [1316], systems design and development [11,1720],and
specic applications [2123] are referred to more specialized books
[16,24,25] and literature. In this review, an overview of thermoelectric
materials considerations is followed by a description of system compo-
nents and design factors and a comparison of material versus system
performance metrics. Lastly, an overview of systems manufacturing
and cost considerations is provided with particular attention paid to
materials concerns.
2. Materials overview
Thermoelectric materials are typically classied by material struc-
ture and composition. Someof the main classications are chalcogenide,
clathrate, skutterudite, half-Heusler, silicide, and oxide. Excellent re-
views of thermoelectric materials have provided descriptions of both
the materialclassications and therelationship between material struc-
ture and thermoelectric properties [13,14,26], so comprehensive de-
scriptions are not provided here. Chalcogenide materials have a long
history of demonstrated thermoelectric use with bismuth telluride
and lead telluride being the most prominent. Commercial, off-the-
shelf thermoelectric modules for low temperature use are primarily
made with bismuth telluride and its solid solutions with antimony or
selenium. Lead telluride has better thermoelectric properties at higher
temperatures (~500600 °C). Materials engineering of clathrates and
skutterudites has involved introduction of void-lling or guest atoms
into a base structure. These additions can optimize electron concentra-
tion or act as phonon scattering sites. Such materials engineering to
achieve a glass-like thermal conductivity combined with good charge
carrier mobility has been termed the phonon glass electron crystal
approach. With one vacant sublattice in the crystal structure, the
properties of half-Heusler materials have also been improved through
void-lling as well as doping of the lled sublattices. Silicides have
generated interest due to the low cost of their abundant materials (i.e.
Fig. 1. Picturesof an off-the-shelf thermoelectric module. (a) Side view showing multiple
thermoelectric leg couples. (b) Interior of module with one substrate removed to reveal
the electrical interconnects and solder joints. The module pictured is approximately 1 in.
by 1 in. and supplied by Marlow Industries, Inc.
Fig. 2. Schematic of one thermoelectric couple in a thermoelectric generator system. A
module consists of many couples between electrical insulators. The modulesare connect-
ed to heat exchangers to interface with thermal reservoirs in the waste-heat recovery
application.
Table 1
Approximate waste-heat source temperatures are provided for sample mid- and high-
temperature TEG applications. Temperatures will vary based on TEG position in the sys-
tem, and thetemperature at the hot side of the thermoelectric will be lower than the heat
source temperature.
Application Heat source temperature Reference
Automotive exhaust 400700 °C [10]
Diesel generator exhaust ~500 °C [11]
Primary aluminum HallHeroult cells 700900 °C [3,4]
Glass melting regenerative furnace ~450 °C [3,4]
27S. LeBlanc / Sustainable Materials and Technologies 12 (2014) 2635
silicon), and oxides are expected to have high temperature stability in
air. Notable advancements have been made in both the types of mate-
rials synthesized and the reportedproperties. For low temperature ther-
moelectrics, nanostructured bismuth telluride [27], polymers and
polymerinorganic matrices [2831], and MgAgSb-based materials
[32] have broadened the range of options. The reported material prop-
erties for high temperature thermoelectrics have demonstrated note-
worthy gains resulting in ZT values above 1. Hierarchical nano- to
meso-scale structuring [33] and new materials such as tetrahedrites
[34] have contributed to the gains.
While the materials developmentprogress is promising, the increas-
ing breadth of materials and the reports of ever-increasing ZT mask the
underlying challenges of employing the materials in devices. Material
properties are highly temperature-dependent, posing multiple chal-
lenges for application-specic materials selection. Few applications
have heat sources at one single temperature, so matchingan application
temperature with the point of peak ZT in a thermoelectric material is
unrealistic. Instead, most applications have some degree of thermal
uctuation or cycling. If the heat source is a uid stream, the tempera-
ture of the uid varies along the ow direction. The temperature
decreases along the length of each thermoelectric leg, as well. Ways of
combining different materials in one device through cascading,
segmentation, and varying the material in the uid ow direction
have been developed [3537]. Additionally, peak ZT values for high-
temperature materials often occur at temperatures above 600 °C. How-
ever, the temperature at the hot side of the thermoelectric material it-
self is lower than the heat source temperature because there are
system component thermal resistances between the heat source and
the thermoelectric material. There are applications with heat sources
above 600 °C such as industrial process furnaces and exhaust streams,
and there are many opportunities for thermoelectric power generation
in applications with heat sources in the 250500 °C range [12].Inboth
cases, average ZT over the application temperature range is highly rele-
vant to material selection and design. Fig. 3 presents ZT values for a high
peak ZT material as well as materials which have generated commercial
and product development interest and results [3840].
Material stability over the full operating temperature range is rele-
vant to device engineering. Thermoelectric materials must be stable
within the ller medium. If the thermoelectric material is exposed to
air, the material must not oxidize within the operating temperature
range. Devices can be packaged in an inert gas to mediate this problem.
In low temperature devices, a solid ller is sometimes used, but solid
ller media for high temperature applications if they currently exist
must also be sufciently stable and inactive with the TE material. For
example, some materials undergo sublimation within the operating
temperature range of high temperature applications. Even if the materi-
al properties are sufcient for most of the range or the nominal operat-
ing temperature, the risk associated with material sublimation during
any temperature spikes is severe device performance degradation or
even device failure [44]. Hence, reports of ever higher peak thermoelec-
tric material ZT values deceptively allude to more power generation po-
tential which may not be valid given realistic application parameters.
The translation of thermoelectric materials into devices also requires
consideration of both n- and p-type thermoelectric materials. Although
a thermoelectric unit, or couple is typically composed of n- and p-type
legs, both are not strictly necessary. For instance, if ease of synthesis,
material stability, and reliability are challenges for the n- or p-type var-
iation of a new material, faster prototype/product development, dem-
onstration, or commercialization could be achieved with one type (n
or p) coupled with a metalshunt. Using both n- and p-types of materials
signicantly increases the thermopower and thus the open circuit volt-
age of the TEG since the total thermopower for a pn leg couple, S
pn
,
equals the sum of the magnitude of each leg's thermopower. Again, ad-
vances in material ZT are thusdeceptive. For instance, an increase in the
ZT of an n-type (p-type) chalcogenide might be achieved, but a similar
increase in the properties of a corresponding p-type (n-type) chalco-
genide is not. Hence, the overall gain in ZT for the device is not propor-
tionally as high as the gain in ZT for the individual material.
Although the topic receives far less attention than thermoelectric
properties, mechanical properties of thermoelectric materials are criti-
cal for both device manufacturingand operation. Typical thermoelectric
materials are brittle and behave mechanically like ceramics. Table 2 pro-
vides a perspective of measured parameters which reect the brittle
quality of these materials. However, it is challenging to characterize
the brittleness as measured by hardness, fracture strength, and fracture
toughness. Characterization results vary based on sample geometry and
testing technique even when the material is held constant [45,46],and
changes in composition during alloying of the same set of elements
can lead to variations in microstructure and mechanical proper-
ties [47].
The coefcient of thermal expansion (CTE) is an important parame-
ter due to the high operation temperatures and thermal cycling in po-
tential TEG applications [44,53]. Because each thermoelectric leg is
held rigidly in place by a solder joint to the electrical interconnect and
substrate, signicant stresses can build up in the material, particularly
at the corners and edges. The CTE mismatch between the TE material,
interface layers, interconnects, and substrates exacerbates the problem
of stress concentration. Proposed solutions involve introduction of com-
pliant interface materials. Examples include liquid metal layers [54] and
novel structures such as carbon nanotube arrays [55].
3. System design and components
The power generation potential of a TEG depends largely on the sys-
tem design, not only the TE material. In particular, the thermal and elec-
trical impedance of the TE material relative to the impedances of the
rest of the system components inuence system output and perfor-
mance [5658]. For instance, the arrangement of the TE material within
the TE module signicantly affects thermal and electrical transport in
the overall device. Although the typical unicouple formation is like the
pishaped structure, alternative structures like couples which opti-
mize thermal and electrical transport have been proposed such as the
yshaped connectors discussed in [54]. When considering material
properties alone, the tradeoff between thermal conductivity and electri-
cal resistivity is often discussed. However, at a device-level, the conict-
ing parameters become thermal conductance and electrical resistance
which include the physical geometry of the material in addition to the
intrinsic material properties. There is a tradeoff between the total
Fig. 3. The temperature range for typical waste-heat sources and TEG hot side operation
values is overlaid on ZT versus temperature data for a top-performing thermoelectric ma-
terial and ones which have generated commercial interest. High peak ZT values can mask
the need for large average ZT values over the application temperature range. The data
shown here for high ZT, p-type PbTe endotaxially nanostructured with SrTe (circles) are
extracted from [33] an d show a peak ZT of 2.2 at 642 °C. Skutterudite (squares, dat a
depicted for Ba
0.08
La
0.05
Yb
0.04
Co
4
Sb
12
)[41], tetrahedrite (diamonds, data depicted is for
0.5 natural mineral Cu
9.7
Zn
1.9
Fe
0.4
As
4
S
13
and 0.5 synthetic Cu
12
Sb
4
S
13
)[42], and half-
Heusler (triangles, data depicted for Nb
0.6
Ti
0.4
FeSb
0.95
Sn
0.05
)[43] materials have generat-
ed commercial interests based in part on their average ZT values.
28 S. LeBlanc / Sustainable Materials and Technologies 12 (2014) 2635
thermal conductance and the electrical resistance of the TE material at
the module level, and two key features of module geometry, the ll fac-
tor and TE leg size, play a large part in this tradeoff. The ll factor is the
ratio of the amount of module surface area occupied by TE material to
the overall surface area. The total surface area is not necessarily covered
by TE material (i.e. the ll factoris not 1) due to performance and/or cost
optimization [58] and manufacturing constraints like minimum inter-
leg spacing during assembly. Likewise, the tradeoff between thermal
and electrical parameters necessitates an optimization of the TE leg
height.
The materials needs for thermoelectric devices extend beyond the
TE material alone. There are several other device components, some of
which interact directly with the TE material, affecting overall device
performance. For instance, there is a metallurgical bond between the
TE leg and the metal interconnects. There are engineering consider-
ations which inuence the selection of the solder or braze material
used to form this bond. The solder/braze material must not diffuse
into the TE material; a diffusion barrier placed on the TE materialsurface
is typically required [5962]. The electrical contact resistance between
the solder/braze material and TE material must be low. The reow tem-
perature of the solder/braze should be higher than the device operating
temperature to prevent TE leg movement or changes in electrical resis-
tance during operation. Additionally, the thermal contact resistance be-
tween the TE leg and the metal interconnect and between the metal
interconnect and substrate will affect the temperature drop, and thus
voltage, achieved across the thermoelectric leg.
There are challenging materials requirements for the module sub-
strates and geometries. The substrates must be electrically insulating
but thermally conducting. Sincethe substrate must withstand high tem-
peratures, particularly on the hot side of the TE leg, the substrates are
typically ceramic materials, and exible substrates for high temperature
TE devices have not been demonstrated. The TE legs are attached to the
substrate, so the substrate must have the mechanical strength to sup-
port the legs and interconnects. Module design must incorporate the
ability to shape ceramic to the desired design structure, so most
modules have a square or rectangular shape. If the application requires
a different form factor, rectangular units are often positioned to accom-
modate this form factor. There have been limited demonstrations of cy-
lindrical modules as shown in Fig. 4 [63,64].
The TE module is attached to the exterior system with thermal inter-
face materials (TIMs) to improvethe transfer of heat toand from the hot
and cold sides of the TE device. The operating temperature, particularly
on the TE system hot side, creates a critical constraint onthe TIM used as
these temperature can be above 200 °C. TIMs come in various forms in-
cluding thermal greases or pastes, gap ller pads, and phase change ma-
terials [6567]. However, the typical maximum operating temperature
of most greases or pastes is approximately 150 °C. At hightemperatures,
greases and pastes dry out leaving air gaps which greatly increase the
thermal resistance at the interface. Gap ller pads and phase change
materials are more expensive but more reliable for hot side interfaces.
Carbon-based TIMs are able to operate at higher temperatures with typ-
ical maximum operating temperatures near 300 °C, but the thermal
conductivity is often anisotropic with the through-plane value being
lower. Novel interface materials based on carbon nanotube arrays and
composites have been proposed and experimentally demonstrated
[55,6870], and they have the potential to provide an appropriate TIM
solution for mid- to high-temperature TEGs.
Thermoelectric systems for most applications require heat ex-
changers on both the hot and cold sides of the device. The heat ex-
changers enable sufcient heat transfer from the heat source to the TE
module hot side as well as heat rejection or cooling on the cold side.
Therefore, the effectiveness of the heat exchangers directly impacts
the temperature drop (and thus voltage) across the TE material. The
overall heat transfer capability of the heat exchanger, often denoted
by an overall heat transfer coefcient U, depends on the exchanger de-
sign and material as well as the heat exchange uid. The value of Uis
much higher when the uid is a liquid, but use of a liquid adds complex-
ity to the system as a closed-loop system must be implemented. In most
waste-heat recoveryapplications, the heat source is a gas streamsuch as
ue gas from a chimney or furnace, so a liquid working uid on the hot
Table 2
Mechanical properties of selected thermoelectric materials. Measurement error and standard deviations are available in the original references.
Material type Material Young's modulus
E
(GPa)
Hardness
H
(GPa)
Fracture toughness
K
Ic
(MPa-m
1/2
)
Fracture toughness
K
c
(MPa-m
1/2
)
Fracture strength
σ
f
(MPa)
Reference
Skutterudite CeFe
3
RuSb
3
133 1.12.8 37 [45]
CoSb
3
136 1.7 86 [45]
PbTe-based Ag
0.43
Pb
18
Sb
1.2
Te
20
54.2 0.98 0.34 28.1 [48]
Pb
0.95
Sn
0.05
TePbS 8% 54 1.28 0.31 [49]
Oxide Ca
3
Co
4
O
9
86 2.6 2.8 ––[50]
Ca
0.95
Sm
0.05
MnO
3
205.2 11.05 4.99 ––[51]
Antimonide Zn
4
Sb
3
75 1.65 0.68 65 [52]
Fig. 4. Cylindrical TEG system produced by Gentherm (a) (gure reproduced from [63]) and cylindrical ingots of doped lead telluride (b) (gure reproduced from [64]).
29S. LeBlanc / Sustainable Materials and Technologies 12 (2014) 2635
side is unrealistic. The heat exchangers must also be integrated into the
system with the TE module which adds system complexities such as in-
creased weight and size and additional thermal interfaces.
As indicated earlier, the optimization of TEG power output and ef-
ciency depends on TE material properties and dimensions as well as
system-level electrical and thermal resistances. Hence, the selection of
electrical and thermal contact/interface materials, substrates, and heat
exchangers directly impact TEG performance, and the intricacies of
this optimization have been explored through analytical and system
modeling. The impact of asymmetric system-level thermal resistances
on either side of the TE material has been investigated for idealized sys-
tems with constant temperature heat source, ll factor of 1, matched or
averaged n- and p-type material properties, temperature-independent
TE material performance, and negligible electrical contact and parasitic
thermal resistance approximations [57,71]. The optimum ratio of
electrical load to TE internal resistance was shown to take the form
(1 + ZT). The optimum ratio between the hot and cold side system-
level thermal resistances took on a value of 1 for maximum power out-
put [57]. A recent study demonstrated the impact of a constant heat ux
versus constant temperature boundary condition, and it included elec-
trical contact resistances to the TE material [72]. A detailed TEG system
model indicated the optimum hot to cold side thermal resistance ratio
must be larger than 1030 to achieve maximum TEG power output
[73]. This model was quite extensive in that it incorporated TE material
property temperature dependence, unmatched (real) n- and p-type
material properties, electrical and thermal contact resistances, parasitic
heat loss components, hot and cold side heat exchanger models, and TE
device optimization models. Thus, TEG output and performance is high-
ly dependent on the link between actual material and system-level
parameters.
4. Material vs. system metrics
Typical metrics for TEGs are ZT,efciency, and power output. While
they are mostly reported in terms of intrinsic material properties, dis-
cussions about system-level performance point out alternative formula-
tions which account for the contribution of other device and system
components [16,58,74,75]. For instance, while ZT is often reported in
terms of TE material properties S,σ,andk, a more relevant formulation
for a module-level ZT parameter is S
pn2
T/(KR). The extrinsic parameters
Rand Kindicate electrical resistance and thermal conductance of the TE
material in a couple; these are dependent on the dimensions of the legs.
Thermoelectric efciency is often reported on a materials basis; it is
the electrical power generated divided by the thermal energy trans-
ferred into the TE material. However, the device- or system-level ef-
ciency is actually lower since not all of the heat available to the
system is transferred to the TE material. The effectiveness of heat ex-
change between the heat source and the TE device, primarily through
the heat exchangers, determines the amount of heat transferred to the
TE material. Fig. 5 shows the difference between thermoelectric materi-
al efciency and TEG system-level efciency for simulated TE waste-
heat recovery systems in three combustion applications [4,76,77].The
TEG system efciency can be considerably lower than the TE material
efciency which is often reported withmaterial characterization results.
Only the system parameters were changed in the simulation, and the
selected thermoelectric material was held constant [76].Thedifference
between the material and system efciencies can be reduced if the
thermoelectric material selection is optimized for the application
temperature.
Frequently, the TEG efciency is less of a concern than the total
power output since the power generated by the TEG is the valuable
component to the end user. Sufcient understanding of the value of
the power output depends on system-level parameters. There are sys-
tem components which require power input, so the power generated
by the TE device alone is less relevant than the net power, power gener-
ated less power required for system components, of the entire system.
For instance, power is required to blow or pump a cooling uid through
the cold side heat exchanger. Although a higher mass ow rate of work-
ing uid in the heat exchanger results in the benet of more effective
heat exchange, increased pumping power is required to achieve this
benet. Additionally, power electronics may be used in a TEG system
or product. For example, these power electronics can be used for
power conversion (e.g. converting DC TEG output to AC input for an
electrical grid), and/or they can optimize the electrical load (e.g.
matching a variable circuit load resistance to the xed power source
electrical resistance to maximize thermoelectric power generated).
These power electronics can also have a power input requirement for
operation. The net power delivered by the TEG, and thus the power gen-
erated for the end user, must account for these parasitic power require-
ments in the system. The end user may have requirements for the
minimum net power which must be delivered for the investment in
TEG power generation to be worthwhile. This is an important consider-
ation to determine the feasibility of TEG power generation in various
applications.
The net power generated must also be understood relative to system
sizing features. In most applications, there is limited space and capacity
available in which to accommodate the TEG. The total surface area and
weight of the TEG system inuence the ability to integrate it into
existing systems and architectures, so the power density (power gener-
ated normalized by surface area required or available) and specic
power (power generated normalized by TEG system mass)are key met-
rics. For example, industrial furnaces have a nite surface area in which
a TEG can be incorporated. Automotive exhaust systems have nite
space to accommodate a TEG, and the additional weight of the TEG on
the vehicle entails a consequential fuel use requirement [78,79].
5. Manufacturing
The manufacturing process for thermoelectric devices varies based
on the type of thermoelectric material employed. The overview provid-
ed here applies to bulk materials and the most traditional manufactur-
ing process. It is not comprehensive for all types of TE materials and
devices but is provided as a reference to enhance understanding about
engineering challenges commonly experienced with materials. A sche-
matic of a TE device manufacturing process is shown in Fig. 6.
Process yield is a signicant consideration for the manufacture of TE
devices. As opposed to materials development and characterization
where the primary yield concern corresponds to material synthesis
and the number of samples which can be characterized, there are
many more steps in the device manufacturing process. Thermoelectric
material synthesis is commonly accomplished through ball milling
powders of the constituent elements. While this can be a lengthy pro-
cess, it is fairly repeatable with high yield once a processing recipe is
Fig. 5. Thermoelectric material efciency compared to generator system efciency simu-
lated for three potential applications [76]. The syste m efciency is 32%, 33%, and 59%
lower than material conversion efciency for the water heater, automotive exhaust, and
industrial furnace applications, respectively. The variation can be reduced by selecting
the thermoelectric materials based on each application's operating temperature range.
30 S. LeBlanc / Sustainable Materials and Technologies 12 (2014) 2635
established. However, establishing the process to repeatedly achieve a
specic composition can be challenging. Complete mixing is required,
and sufcient energy must be imparted to the powder particles. Ther-
moelectric materials can also be made through melting processes.
Phase diagrams [80] of TE materials demonstrate the narrow process
windows in which each phase is achieved, and the thermoelectric mate-
rial properties depend on the phase. For instance, AgSbTe
2
is in PbTe-
based materials such as TAGS and LAST thermoelectric materials in
which microstructures reportedly improve thermoelectric performance
[33,81]. The phase diagram for AgSbTe
2
(Fig. 7) demonstrates the com-
plex variations in phase, and thus microstructures, which may arise due
to process parameters [82]. Hence, process uctuations can result in
variations of phase, microstructure formation, repeatability of the syn-
thesis process, and resulting material properties.
Once the TE material is synthesized in powder or particle form, it is
consolidated into ingots, typically through hot pressing or spark plasma
sintering. As discussed in the materials overview section, sublimation
and stability/reactivity in the process gas environment must be consid-
ered. While a given TE material might be stable at the application's oper-
ating temperature, the consolidation process (or other manufacturing
processes) may occur at a higher temperature in order to densify the
material.
The ingots are then diced to form the thermoelectric legs, and the
material brittleness is a primary concern in this process step. Any
chipping of a thermoelectric leg changes the leg surface area and inu-
ences both the leg's thermal and electrical resistance. This in turn affects
system performance, particularly when the geometry of each leg is not
the same. Chipped legs would not be used in a device, reducing
the manufacturing process yield. Moreover, dicing and subsequent
chipping can lead to crack initiation. These cracks can propagate in sub-
sequent process steps, or worse yet, during TE device operation. Even
microcracks can affect thermal and electrical transport in the TE mate-
rial. The dicing step also constrains the achievable leg dimensions
since the post-dicing leg dimensions depend on the dicing equipment
capabilities (e.g. saw blade width, dicing depth).
The advent of thin lm thermoelectrics has introduced manufactur-
ing processes which are commonly associated with the semiconductor
industry. Structures such as superlattices and nanowires have been pro-
posed and are made with deposition, growth, and/or etching micro/
nanofabrication processes including molecular beam epitaxy, chemical
vapor deposition, vaporliquidsolid growth, and electroless etching
[83]. Additionally, recent demonstrations of thermoelectric materials
Fig. 6. Schematic showing typical steps for manufacturing of thermoelectric module.
Fig. 7. Phase diagram of AgSbTe
2
, a common component in microstructured PbTe-based
thermoelectric materials. Th e complexity and uncertainties about the bounds o f the
phase diagram demonstrates how small process uctuations can affect thermoelectric
material formation.
The gure is reproduced from [82].
31S. LeBlanc / Sustainable Materials and Technologies 12 (2014) 2635
formed through solution processing techniques have been shown for
both inorganic and organic materials. Since these approaches to making
thin lm thermoelectrics are quite varied, a generalizable, standard
manufacturing process ow is not yet available.
Materialcharacterization during manufacturingposes a unique chal-
lenge. Both standard and custom-built equipment exist to characterize
thermoelectric properties of TE materials [8487]. However, these are
designed to accommodate individual samples of TE material (e.g. an
ingot or one TE leg), and specialized contacts must be made to the sam-
ple. Hence, the techniques are destructive in that the characterization
sample cannot subsequently be used for a TE device. The characteriza-
tion process is also time-consuming, so it becomes a bottleneck in the
overall manufacturing process stream. Standard, in-line characteriza-
tion techniques which could be implemented within the manufacturing
process would be valuable. They would enable characterization of the
material as it is incorporated into the device as well as the effective
properties of the material combined with its electrical and thermal con-
tacts to other device components. In-line characterization could also in-
crease process yield and reduce waste since defective devices would be
detected earlier in the manufacturing process.
6. Cost considerations
The thermoelectric materials in establisheddevices are based on bis-
muth telluride, lead telluride, and silicon germanium. The high cost of
tellurium and germanium is touted as a reason to develop thermoelec-
tric materials which do not use expensive elements [88]. The develop-
ment of polymer, silicide, oxide, and tetrahedrite TE materials is
motivated strongly by the need to lower costs and improve the com-
mercial viability of TEGs. Fig. 8 demonstrates the raw materials costs
associated with sample materials of the main types of TE material clas-
sications. The materials cost depends heavily on material composition.
Within a given classication of material, the cost can vary by a factor of
two and sometimes even an order of magnitude, particularly when a
relatively inexpensive material is doped with an expensive element.
The doping is done to achieve better performance (e.g. higher ZT), so
it is particularly helpful to consider both cost and performance as
discussed at the end of this section.
The standard practice is to synthesize thermoelectric compounds
with high purity starting materials, and the purity of materials affects
cost with higher purityresulting inhigher costs. While the effect of ma-
terial purity on TE material properties has not been widely established
[9093], and an up-to-date, systematic study would be useful, thepres-
ence of impurities in the TE material likely degrades the properties. The
relativedifference in material cost based on purity level is demonstrated
in Table 3 for sample materials.
While thermoelectric material costs are non-negligible, the system
component costs can overwhelm the material costs. Major contribu-
tions to system costs are due to the substrates and heat exchangers.
Substrates are typically thin ceramic pieces, often alumina-based, with
off-the-shelf costs of approximately $0.10/cm
2
. The cost of the hot and
cold side heat exchangers is particularly signicant. Heat exchangers
have to be customized to the TEGin order to accommodate the form fac-
tor of the device and optimize system performance, so it is challenging
to specify cost. However, cost estimates can be determined from off-
the-shelf units. Heat exchanger cost generally scales with the overall
heat transfer coefcient [58],orU-value, as shown in Fig. 9.
Both material and device manufacturing costs are relevant for TEG
commercialization. Particularly with the advent of nanostructured ther-
moelectric materials, the cost of manufacturing techniques required to
make thermoelectric materials can vary widely. The costs vary based
on the complexity of the manufacturing process and the maturity of
each process step's technology. In particular, the costs associated with
lithographic or epitaxial deposition processes for thick/thin lm mate-
rials are orders of magnitude larger than those associated with bulk ma-
terial processing [75]. While there may be a tradeoff between increased
material synthesis cost and assembly cost for thermoelectric thick/thin
lm materials, such comparisons are not readily available and remain
Fig. 8. Cost of various thermoelectric materials based on the raw material costs [89] of the constituent elements.
The exact costvalues and calculations are provided in[75].
32 S. LeBlanc / Sustainable Materials and Technologies 12 (2014) 2635
largely unspecied. The cost of assembly is a signicant consideration.
Assembling the thermoelectric legs into the typical unicouple formation
can be performed manually or automated through pick-and-place or
shaker machines, and the cost depends on the assembly technique.
Since exact cost values for assembly steps are not publicly available,
the impact of this cost is difcult to project.
Various cost analyses for thermoelectric devices have been devel-
oped and use different approaches. An early cost calculation used fuel
cost and module construction costs for given leg thicknesses [74].The
tradeoff between cost and efciency was investigated by rst determin-
ing optimum device geometry followed by calculating material cost for
that geometry [104]. A recent analysis created a costperformance met-
ric which coupled materials, manufacturing, and system costs with TEG
performance [58], and the cost in $/W for TEGs made with various TE
materials was calculated [75]. The analysis concluded that bulk thermo-
electric materials can achieve costs below $1/W for applications where
the thermoelectric material temperature is higher than 275 °C, and the
high costs of heat exchanger and ceramic substrate system components
present a barrier to achieving low-cost thermoelectric generators.
Particularly for high-temperature applications, it is relevant to deter-
mine whether alternative heat recovery technologies are more cost-
effective than TEGs. For instance, the higher conversion efciencies of
organic Rankine cycle systems could outweigh the impact of their capi-
tal cost and maintenance requirements.
7. Conclusion
The abundance of waste-heat sources and increasing energy ef-
ciency goals make waste-heat recovery with thermoelectric power gen-
eration a promising technology. The realization of commercial
thermoelectric generators hinges on solving the intimately coupled
challenges with materials development and systems engineering. Mea-
suring system performance with thermoelectric material ZT alone is
insufcient for determining generator performance, and other thermo-
mechanical/chemical material properties and components strongly
impact product development. Major issues to resolve for TEG commer-
cialization are material selection based on average (not peak) ZT,mate-
rial thermal and chemical stability, engineering of interfaces and
interface materials, and optimization of hot and cold side thermal resis-
tances (e.g. heat exchangers). Moreover, the manufacturability of ther-
moelectric devices combined with the total system cost will inuence
the technology's time-to-market, readiness of product supply, and cost
competitiveness. Active research and development efforts along with
the emergence of new prototypes and pilot systems indicate solutions
to the linked materials and systems challenges are well underway, and
thermoelectric generators can contribute to sustainable development.
Acknowledgments
The author gratefully acknowledges support through the NSF/DOE
Partnership on Thermoelectric Devices for Vehicle Applications (Grant
No. 1048796), Precourt Institute for Energy, Sandia National Laborato-
ries Fellowship, and Stanford DARE Fellowship. Discussions with
Dr. Matthew Scullin of Alphabet Energy were helpful in providing com-
mercialization and industry perspectives.
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... Resurgence are focused to enhance the efficiency by reducing κ for TiCoSb. 39 Nano inclusion and complex iso-electronic alloying are important routes to enhance the efficiency of a TE material, by reducing κ. 39,40 Micro/nanostructuring of materials also led to a decrease in κ . 41-43 Huang et al. have reported that incorporation of 6 vol% ZrO 2 nano-inclusions to the ZrNiSn HH alloy leds to a significant reduction (~35%) in κ through introduction of phonon scattering centers. ...
... Resurgence are focused to enhance the efficiency by reducing κ for TiCoSb. 39 Nano inclusion and complex iso-electronic alloying are important routes to enhance the efficiency of a TE material, by reducing κ. 39,40 Micro/nanostructuring of materials also led to a decrease in κ . 41-43 Huang et al. have reported that incorporation of 6 vol% ZrO 2 nano-inclusions to the ZrNiSn HH alloy leds to a significant reduction (~35%) in κ through introduction of phonon scattering centers. ...
... Iso-electronic alloying is one of the viable approach for introducing point defects, effectively leads to a reduction in κ. 40 The effect of iso-electronic alloying, band engineering, and nanostructuring on TE properties has been extensively investigated. 39,40,46 However, it is crucial to mention that, κ l is highly responsive to the variation in phonon dispersion, specifically the speed of phonon in material. 47 A dramatic reduction in κ is reported by G Tan et al. when alloying SnTe with AgSbTe 2 , owing to a reduction in velocity of phonon. ...
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A drastic variation in thermal conductivity (\k{appa}) for synthesized samples (TiCoSb1+x, x=0.0, 0.01, 0.02, 0.03, 0.04, and 0.06) is observed and ~47% reduction in \k{appa} is reported for TiCoSb1.02 sample. In depth structural analysis is performed, employing mixed-phase Rietveld refinement technique. Embedded phases and vacancy are analyzed from X-ray diffraction (XRD) and Scanning electron microscopy data. Local structures of the synthesized samples are explored for the first time by X-ray absorption spectroscopy measurements for TiCoSb system and corroborated with Rietveld refinement data. Lattice dynamics are revealed using Raman Spectroscopy (RS) measurements in unprecedented attempts for TiCoSb system. XRD and RS data accomplishes that variation in \k{appa} as a function of Sb concentration is observed owing to an alteration in phonon group velocity related to lattice softening. Polar nature of TiCoSb HH sample is revealed. LO-TO splitting (related to polar optical phonon scattering) in phonon vibration is observed due to polar nature of TiCoSb synthesized samples. Tailoring in LO-TO splitting due to screening effect, correlated with Co vacancies is reported for TiCoSb1+x synthesized samples. Lattice softening and LO-TO splitting lead to decreases in \k{appa}~47% for TiCoSb1.02 synthesized sample.
... The transport properties are evaluated as a function of temperature in the region of 100-700 K. The WIEN2k output files are utilized as input files in the Boltz-TraP algorithm to determine thermoelectric parameters with the assumption of a constant relaxation time (τ) [34,64]. The duration of lattice vibration disturbance is quantified by the τ, which is kept at 10 −14 s [65,74]. ...
Article
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This article comprehensively explores the structure, stability, mechanical, optoelectronic, and thermoelectric aspects of the emerging double perovskites A2YCuZ6 (A = Rb, Cs and Z = Cl, Br). The structural and mechanical characteristics are estimated using the PBE-GGA functional, whereas the optoelectronic and thermoelectric characteristics are computed using the modified Becke and Johnson potential. Tolerance factor, formation energies, and Gibbs free energies have validated the cubic phase and thermodynamic stability. The anticipated elastic values indicated that all the materials exhibited mechanical stability, ductility, and anisotropic behavior. The computed electronic features verified that Rb2YCuCl6, Rb2YCuBr6, Cs2YCuCl6, and Cs2YCuBr6 have indirect band gaps of 1.95, 1.30, 1.55, and 1.2 eV, respectively. This work also explores the optical response in the energy range 0 to 6 eV in terms of polarization, refractive index, absorption, and optical conduction. The visible and ultraviolet ranges of light are both significantly absorbed, making these materials optimal for use in solar systems. The BoltzTraP code has been used to calculate the transport parameters, demonstrating the p-type semiconductors nature of these materials. Further, the significant merit values of 0.77, 0.83, 0.82, and 0.81 at room temperature for analyzed materials suggest their potential applicability in thermoelectric devices. Hence, the investigated double perovskites, which are not empirically validated, have been recommended as extremely suitable alternatives for creating various energy conversion applications.
... The legs are then joined to the interconnects (made of electrically conductive metal such as silver) which are connected to the substrates (made of electrically insulating but thermally conducting material such as ceramic). Solder or braze materials are used to connect the legs, interconnects, and substrates [17]. ...
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In view of the increased demand for electricity and the associated environmental and financial concerns, there is an urgent need to develop technological solutions that can improve the efficiency of engineering systems and processes. Thermoelectric (TE) technologies, with their capability of direct conversion of thermal energy into electrical energy, are promising technologies for green power generation through using them as energy harvesting devices for waste heat recovery in industrial processes and power generation systems. To date, TE technologies are still not commercialized on a large scale due to various economic and technical obstacles. The majority of previous research on TE technologies concentrated on improving the TE properties, such as electronic transport and figure-of-merit, while limited attempts were made to identify the best material processing techniques or reduce the cost of manufacturing. Conventional Manufacturing (CM) of TE materials and devices is multi-stage, complex, labour-intensive, time-consuming, and has high energy requirements. Thus, manufacturing challenges are considered key contributors toward limited industrial adoption of TE technologies. The rapid advent of advanced Additive Manufacturing (AM) processes, in recent years, caused dramatic changes in engineering design thinking and created opportunities to solve manufacturing challenges. With its significant capabilities, AM can be the route to address the shortcomings of CM of the thermoelectric technologies. In this regard, this paper presents an in-depth review of the literature studies on using AM technologies, such as selective laser melting, fused deposition modelling, direct ink writing, stereo lithography, etc., for manufacturing TE materials and devices. The benefits and challenges of each AM technology are discussed to identify their merits and the required future research. This paper demonstrates the role of AM in advancing green materials and technologies for solving some of the outstanding energy and environmental issues.
... From 200 to 800 K, the transport characteristics have been determined in relation to temperature. With the assumption of a constant relaxation period (τ), the BoltzTraP method uses the WIEN2k results as inputs to determine the thermoelectric characteristics [34,64]. The time taken for the lattice vibration perturbation to be measured is 10 -14 s [65,70,71]. ...
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Herein, a comprehensive investigation of the structural, mechanical, optoelectronic, and thermoelectric features of K 2 YCuZ 6 (Z = Cl, Br) is presented concerning their potential utilization in photovoltaic and thermoelectric devices. The observation of formation energy and fitting of the Murnaghan equation of state ensured thermo-dynamic and structural stability, respectively. The mechanical stability of K 2 YCuCl 6 and K 2 YCuBr 6 is determined by employing Born Huang stability criteria based on their elastic constants. The analysis of elastic parameters further classified these materials as anisotropic as well as ductile. The band gaps of K 2 YCuCl 6 and K 2 YCuBr 6 have been computed using the TB-mBJ potential, resulting in values of 2.4 and 1.56 eV, respectively. An extensive analysis of the optical characteristics of these compounds is carried out in the energy region spanning from 0 to 8 eV. These compounds are discovered to have substantial absorbance and conductive properties in the visible and ultraviolet energy ranges. On the other hand, they exhibit transparency to incoming photons with lower energy levels. Our examination of the optical characteristics indicates that these compounds are very suitable for use in photovoltaic applications. The evaluation of thermoelectric parameters resulted in the p-type semiconducting nature and higher figure of merit of 0.78, and 0.80 at 300 K. Therefore, K 2 YCuZ 6 that has not been verified experimentally has great potential for solar cell and thermoelectric applications, indicating its ability to contribute to the progress of alternative energy sources.
Book
The effect of thermoelectricity causes the conversion of waste heat into electricity. It is an economical environmentally beneficial and convenient energy conversion technology that can be used across a broad range of temperature. This chapter introduces thermoelectricity while also exploring its historical context. The thermoelectric property and the different thermoelectric effects, viz. Seebeck, Peltier, Thomson effects, and others are discussed. Additionally, a quick overview of thermoelectric materials has been presented. The figure of merit, a parameter defining research in thermoelectric effects is discussed in this chapter. After all, a concise outline regarding different thermoelectric materials including hybrid polymers, conductive polymers, thermoelectric plastics etc. has also been included herewith.
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There is a growing interest in cost-effective polycrystalline SnSe-based thermoelectric (TE) materials, which are able to replace the high performance but mechanically fragile and costly single-crystalline SnSe. In this study, we present a low-temperature solution-based approach to produce SnSe-PbSe nanocomposites with outstanding TE performance. Our method involves combining surfactant-free SnSe particles with oleate-capped PbSe nanocrystals in specific ratios, followed by thermal annealing and consolidation using spark plasma sintering. These nanocomposites are characterized by distinct compositional and structural properties that significantly impact their transport properties. In particular, the addition of oleate-capped PbSe nanocrystals results in: i) a reduction in the electrostatically adsorbed Na at the surface of the SnSe particles; ii) a reduction of Sn vacancies due to alloying with Pb; iii) an increase in grain boundary density; and iv) the formation of PbSnSe secondary phases. Notably, the SnSe-2.5 %PbSe nanocomposites demonstrate a 30 % decrease in thermal conductivity compared to that of the SnSe matrix. This reduction contributes to a maximum figure of merit (zT) of 1.75 at 788 K with a high average zT value of ca. 1.2 in the medium temperature range of 573–773 K. These values represent one of the highest reported in polycrystalline SnSe materials, showcasing the potential of our fabricated SnSe-PbSe nanocomposites for cost-effective TE applications.
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Thermoelectric power generation (TEG) technology with high figure of merit (ZT) has become the need of the modern world. TEG is a potent technology which can tackle most of the environmental issues such as global warming, change in climatic conditions over the globe, and for burning out of various resources of non-renewable energy like as petroleum deposits and gasolines. Although thermoelectric materials generally convert the heat energy from wastes to electricity according to the theories Seebeck and Peltier effects yet they have not been fully exploited to realize their potential. Researchers are focusing mainly on how to improve the current ZT value from 1 to 2 or even 3 by various approaches. However, a higher ZT value is found to be difficult due to complex thermoelectric properties of materials. Hence, there is a need for developing materials with high figure of merit. Recently, various nanotechnological approaches have been incorporated to improve the thermoelectric properties of materials. In this review paper, the authors have performed a thorough literature survey of various kinds of TEG technology.
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We report a peak dimensionless figure-of-merit (ZT) of 1 at 700 °C in a nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05 composition. Even though the power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is improved by 25%, in comparison to the previously reported p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, the ZT value is not increased due to a higher thermal conductivity. However, the higher power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition led to a 15% increase in the power output of a thermoelectric device in comparison to a device made from the previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type material used to make the unicouple device is the best reported nanostructured Hf0.25Zr0.75NiSn0.99Sb0.01 composition with the lowest hafnium (Hf) content. Both the p- and n-type nanostructured samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. Moreover, the raw material cost of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is more than six times lower compared to the cost of the previous best p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. This cost reduction is crucial for these materials to be used in large-scale quantities for vehicle and industrial waste heat recovery applications.
Article
Thermoelectric energy recovery is an important technology for recovering waste thermal energy in high-temperature industrial, transportation and military energy systems. Thermoelectric (TE) power systems in these applications require high performance hot-side and cold-side heat exchangers to provide the critical temperature differential and transfer the required thermal energy to create the power output. Hot-side and cold-side heat exchanger performance is typically characterized by hot-side and cold-side thermal resistances, Rh,th and Rc,th, respectively. Heat exchanger performance determines the hot-side temperature, Th, and cold-side temperature, Tc, conditions when operating in energy recovery environments with available temperature differentials characterised by exhaust temperatures, Texh, and ambient temperature, Tamb. This work analytically defined a crucially important design relationship between (P/Pmax) and (Rh,th / Rc,th) in TE power generation systems to determine the optimum ratio of (Rh,th / Rc,th) maximizing TE system power. A sophisticated integrated TE device / heat exchanger analysis was used, which simultaneously integrates hot- and cold-side heat exchanger models with TE device optimization models incorporating temperature-dependent TE material properties for p-type and n-type materials, thermal and electrical contact resistances, and hot side and cold side heat loss factors. This work examined the (P/Pmax) - (Rh,th / Rc,th) relationship for system designs employing single-material and segmented-material TE couple legs with various TE material combinations, including bismuth telluride alloys, skutterudite compounds, and skutterudite / bismuth telluride segmented combinations. This work defined the non-dimensional functional relationships and found the optimum thermal resistance condition: (Rh,th / Rc,th)opt > 10 to 30 created the maximum power output in TE optimized designs for various TE material combinations investigated. The non-dimensional relationships were investigated for various electrical contact resistances, differing thermal loss factors, and at various hot-side/cold-side temperature conditions. This work showed that the non-dimensional functional relationships were invariant under these differing conditions. It was determined that a condition of (Rh,th / Rc,th) = 1 creates power output far below maximum power conditions. The (P/Pmax) - (Rh,th / Rc,th) relationship also dictated certain temperature profile conditions, defined by the parameter, (Th - Tc) / (Texh - Tamb), which were directly associated with design points in this relationship including maximum power points. The value of (Th - Tc) / (Texh - Tamb) was generally less than 0.5 at maximum power conditions in TE energy recovery designs using TE materials investigated here. The wide-ranging ramifications on TE energy recovery systems and their design optimization for industrial and transportation-related applications are discussed.
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The diffusion and spatial distribution of tin from solder, and nickel from diffusion barrier in p-type Bi, Sb 2 Te 3 and n-type Bi 2 Te, Se 3 thermoelectric materials were investigated using electron microscopy. The results indicate that nickel is a suitable diffusion-barrier material for tin in both Bi, Sb 2 Te 3 and Bi 2 Te, Se 3. However, even though it is not an issue in the Bi, Sb 2 Te 3 , the nickel diffuses several microns into the Bi 2 Te, Se 3 during the soldering processing and degrades its performance. Diffusion coefficients of nickel in p-type Bi, Sb 2 Te 3 and in n-type Bi 2 Te, Se 3 were also quantitatively studied.
Article
Thermoelectric materials for power generation are typically compared using the dimensionless figure-of-merit ZT because it relates directly to the device efficiency. However, for practical applications, the cost of power generation-as governed by material, manufacturing, and heat exchanger costs-is also a critical factor which is not captured in ZT alone. The necessary analysis, derived herein, optimizes the coupled thermoelectric and economic problem for the leg length, L, and system fill factor, F, as functions of these costs. Fuel, operating, and maintenance costs are excluded. This optimization yields the minimum $ per W value for thermoelectric power generation and a framework for comparing materials beyond ZT. This analysis shows that even very expensive thermoelectric materials have the potential to be the most cost effective at the system level, if incorporated with sufficiently short legs and small fill factor. An approximate scaling analysis, verified using numerical calculations, gives the first closed-form, analytical expressions for optimal L and F to minimize $ per W. The analysis also delineates various cost-dominant regimes with different priorities for materials development, including: (i) a heat exchanger cost dominated regime, where ZT should be increased regardless of material or manufacturing costs; (ii) an areal cost, C′′, dominated regime at fixed F, where ZT/C′′ should be maximized, and (iii) a volumetric cost, C′′′, dominated regime at fixed F, where ZT/(kC′′′) should be maximized, reinforcing the need for low thermal conductivity, k. The cost-performance framework derived here will be applied to a number of real materials and applications in a separate manuscript.
Article
The steelmaking industry in Japan has significantly reduced its energy use for the past several decades and has kept the highest energy efficiency in the world. However, the steelmaking industry is strongly required to develop new technologies for further energy conservation in view of energy security, high and volatile energy prices, and climate change. One of the key technologies to achieve the requirement is waste heat recovery. This paper describes the thermoelectric generation (TEG) system using the waste heat in the steelmaking process. In this system, the TEG unit, which consists of 16 thermoelectric modules made of Bi-Te thermoelectric materials, generates the electrical power directly by converting the radiant heat released from hot steel products. Each thermoelectric module, whose size is 50 mm × 50 mm × 4.2 mm, generates 18 W when the hot-side temperature is 523 K and the cold-side is 303 K. Therefore, the output of the TEG unit is over 250 W. The performance and the durability of the system have been investigated under various operating conditions in steel works. The results of the verification tests in the JFE steel Corporation's continuous casting line will be discussed.
Article
In-Cu composite solders have been proposed as an effective thermal interface material. Here, finite element analysis and theoretical treatment of their mechanical and thermal behavior is presented. It was determined that the stresses and the strains were concentrated in the narrow and wider In channels, respectively. Furthermore, it is suggested that an In-Cu composite with disk-shaped Cu inclusions may not only further improve the thermal conductivity but may also reduce the stiffness of In-Cu composites in shear.