No full-text available
To read the full-text of this research,
you can request a copy directly from the authors.
Erratum: Picosecond carrier recombination dynamics of semiconductor‐doped glasses [Appl. Phys. Lett. 50, 1782 (1987)]
Abstract
Scitation is the online home of leading journals and conference proceedings from AIP Publishing and AIP Member Societies
ResearchGate has not been able to resolve any citations for this publication.
The time dependence of both the photoluminescence due to carrier recombination and the gratings created by degenerate four‐wave mixing were measured in semiconductor‐doped color‐filter glasses. Values ranging from 80 to less than 16 ps (laser pulse width limited) are measured in several different samples at various excitation levels. A slower mechanism, believed to be thermal in nature, is also observed with a lifetime in excess of 9 ns.
The photoluminescence spectra of CdS x Se 1-x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling‐mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (≫30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.
The recombination lifetimes for the radial and angular quantum number conserved 1S–1S and 1P–1P transitions from three‐dimensionally confined electrons in CdS x Se 1-x were measured by time‐resolved photoluminescence (PL). The assignment of the observed transitions was supported by calculations of eigen energy levels and squared matrix element ratio for these transitions as well as well‐resolved PL peaks arising from 1S–1S and 1P–1P transitions.