The unprecedented demand for sophisticated, self-powered, compact, ultrafast, cost-effective,
and broadband light sensors for a myriad of applications has spurred a lot of research, precipitat�ing in a slew of studies over the last decade. Apart from the photosensing ability of an active
element in the light sensor, the device architecture is crucial in terms of photoinduced charge
carrier generation and separation. Since the inception of graphene and the subsequent research
growth in the atomically thin 2D materials, researchers have developed and adapted different
families of 2D materials and device architectures, including single element 2D, 0D/2D, 2D/2D, 1D/
2D stacked structures, and so on. This review discusses the recent reports on the light-sensing
properties of various 2D materials, their heterostructures, and characteristics applicable to the
ultraviolet-near infrared (UV-NIR), short-wave IR (SWIR), mid-wave IR (MWIR), long-wave IR (LWIR),
and terahertz (THz) spectral ranges. It highlights the novelty of the burgeoning field, the height�ened activity at the boundaries of engineering and materials science, particularly in the gener�ation of charge carriers, their separation, and extraction, and the increased understanding of the
underpinning science through modern experimental approaches. Devices based on the simultan�eous effects of the pyro-phototronic effect (PPE) and the localized surface plasmon resonance
(LSPR) effect, the photothermoelectric effect (PTE)-assisted photodetectors (PDs), waveguide-inte�grated silicon-2D PDs, metal-2D-metal PDs, and organic material PDs are examined rigorously.
Theoretical treatment utilizing various computational approaches to investigate 2D materials and
heterostructures for photodetection applications is also briefly discussed. At the end, current
challenges and solutions to enhance the figures of merit of photodetectors are proposed