About
6
Publications
3,519
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
521
Citations
Introduction
Publications
Publications (6)
Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore’s law beyond silicon. However, despite extensive efforts, the growth of wafer-scale TMDC single crystals on scalable and industry compatible substrates has not been well demonstrated. Here, we demonstrate the...
In article number 1806562, Lin Wang, Wei Huang, and co‐workers describe the synthesis of PbI2 with a unique electronic structure down to the atomic scale by a solution method, and construct versatile interfacial semiconductors via band alignment engineering. As an illustrative example, MoS2, WS2, and WSe2 monolayers show completely distinct light–m...
To explore new constituents in two‐dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface‐based devices. Herein, PbI2 crystals as thin as a few layers are synthesized, particularly through...
To explore new constituents in two-dimensional materials and to combine their best in van der Waals heterostructures, are always in great demand as being unique platform to discover new physical phenomena and to design novel functionalities in modern electronics. Herein, we introduce PbI2 into two-dimensional system by synthesizing PbI2 crystals do...
Atomically-thin black phosphorus (BP) field effect transistors show strong-weak localization transition, which is tunable through gate voltages. Hopping transports through charge impurity-induced localized states are observed at low carrier density regime. Variable-range hopping model is applied to simulate scattering behaviors of charge carriers....
Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier density regime. Variable range hopping and nearest range hopping models are applied to simulate the charge car...
