Wei Gan

Wei Gan
Deakin University · Institute for Frontier Materials (IFM)

Master of Engineering

About

17
Publications
3,770
Reads
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777
Citations
Introduction
Wei Gan currently works at the Institute for Frontier Materials (IFM), Deakin University.

Publications

Publications (17)
Article
Full-text available
The ideal mechanical properties and behaviors of materials without the influence of defects are of great fundamental and engineering significance but considered inaccessible. Here, we use single-atom-thin isotopically pure hexagonal boron nitride (hBN) to demonstrate that two-dimensional (2D) materials offer us close-to ideal experimental platforms...
Article
Full-text available
Atomically thin monoisotopic hexagonal boron nitride (BN) which is electrically insulating and has a high thermal conductivity could be utilized as fillers in electronic packaging materials for thermal dissipation in integrated and miniaturized modern devices. Thermal expansion mismatch in electronic packaging could cause strain and ultimately devi...
Preprint
Full-text available
Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical p...
Article
Two-dimensional (2D) tungsten disulfide (WS2), tungsten diselenide (WSe2), and tungsten ditelluride (WTe2) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties...
Article
Full-text available
Materials with high thermal conductivities (κ) are valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest κ among all semiconductors and electric insulators. Sing...
Preprint
Full-text available
The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a subnanometer accuracy that enables reusability...
Preprint
Full-text available
Materials with high thermal conductivities (\k{appa}) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest \k{appa} among all semiconductors and electric ins...
Preprint
Surface enhanced Raman spectroscopy (SERS) is a precise and non-invasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, pharmaceutics, and diagnostic biology. However, it is still a challenge to produce highly sensitive and reusable SERS substrates with minimum fluorescence background. In t...
Article
Full-text available
Heat management has become more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation is of great importance. Here, we report that high-quality one-atom-thin hexagonal boron nitride (BN) has a thermal conductivity (κ) of 751 W/mK at room temperature, the...
Preprint
Full-text available
Heat management becomes more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation and favorable mechanical properties is of great importance. Here, we report that high-quality monolayer boron nitride (BN) has a thermal conductivity (\k{appa}) of 751 W/mK...
Article
Full-text available
Environment-friendly metal-free electrocatalysts with high performance and stability are highly desirable for energy conversion and storage instead of noble metal materials. Here we report a three dimensional carbon-based porous aerogel as a bifunctional electrocatalyst by combining carbon nanostructures of various dimensionalities such as carbon o...
Article
The electronic performance of graphene is largely related to its morphology, surface, size and various synthesis conditions, mainly because of the presence of grain boundary. Better understanding on the relationship between the size and electronic property is very important for graphene's applications in potential electronics. Herein, we selectivel...
Article
Few-layer ternary FePS3 nanosheets, prepared via chemical vapor transport synthesis and ball-milling exfoliation, exhibit excellent electrocatalytic performance for oxygen evolution reaction in alkaline medium. Combined with first principle calculations, our X-ray spectroscopic and HRTEM results clearly reveal that the introduction of in-plane defe...
Article
The oxygen evolution reaction (OER) involving multi-step electron transfer is a challenging in water-splitting due to its sluggish kinetics. It is desirable to explore more efficient electro-catalysts with abundant elements. Herein, we employed a high-temperature polymerization method to develop a structure of graphitic carbon nitride (g-C3N4) nano...
Conference Paper
In summary, fracture toughness and fracture energy properties of ND/epoxy nanocomposites are analyzed. Two times increment in fracture toughness and three times increment in fracture energy is observed. It is found that F-ND is a better choice for nanocomposite formation because of functional groups on its surface. F-ND/epoxy nanocomposites exhibit...

Questions

Question (1)
Question
I try to fabricate suspended graphene device by BOE, which can be referred to the attachment. I fabricated electrodes onto graphene and then put this non-suspended device into BOE for 90s to uniformly etch away 150nm of SiO2 across the substrate . After the etching, CPD was used to dry the device. However, I found out that the etching of SiO2 was incomplete. Does anyone have the experiences with the suspended device fabrication? What is the problem with my process? Thanks a lot.

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