Wangda Li

Lanzhou University | LZU · School of Physical Science and Technology

Spin–orbit torque provides an efficient strategy for electric manipulation of magnetization. However, Joule heat accompanying with electron motion in the electron-mediated spin current result in unavoidable power dissipation. Moreover, the spin diffusion length in electron-mediated spin current is relatively short, preventing the transmission of sp...

A giant magnetoresistance (GMR) sensor with a Wheatstone bridge structure and an out-of-plane linear response was developed. The spin-valve structure consists of a synthetic antiferromagnetic [(Co/Pt) n /Ru/(Pt/Co) n ] reference layer with perpendicular magnetic anisotropy, a Cu spacer layer, and a Co-free layer with in-plane easy magnetization. By...

Spintronic devices can realize multi‐state storage and be used to simulate artificial synapses or artificial neurons, which makes them have promising application prospect in the field of artificial neural networks (ANN). This work investigates the current‐induced magnetization reversal in stacked (Ta/CoFeB/MgO)N structures and their application in...

The conventional spin-orbit torque (SOT) and magnetoresistance effect observed in normal-metal (NM)/ferromagnet (FM) bilayers originate from the interaction between magnetic moments and spin with in-plane transverse polarization (σ̂y). In FM/NM/FM trilayer structures, the presence of an extra FM layer breaks the symmetry, resulting in spin polariza...

The interaction between spin current and magnetic moments in heavy metal (HM)/ferromagnetic (FM) structure results in the well-known spin orbit torque and the concomitant magnetoresistance effect: spin Hall magnetoresistance (SMR) and the unidirectional SMR (USMR). In this work, we simultaneously investigated the SMR and USMR in Ta/Pt/CoFeB/MgO mul...