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Introduction
Tom Miers currently works at Ball Aerospace & Technologies Corp.. Tom does research in Space Remote Sensing, Astrophysics, Solid State Physics, Focal Plane Arrays, and Optics.
Publications
Publications (18)
12 The BGIS 2000 was developed by Ball for submeter remote imaging of the Earth surface. Ball is presently building 2 of these systems for the EarthWatch QuickBird Program. The first system will be launched in the Fall of 2000. This paper will detail the system design, and performance characteristics.
A point design for a mission to detect Earth-sized planets in the inner
orbits of solar-like stars is described. The observing technique is
based upon continuously and simultaneously monitoring 5000 solar-like
stars for brightness changes that would be caused by planets transiting
their star. Detection of periodic transits of the same amplitude and...
The authors present the results of a thorough study on the effects
of dynamic gate bias on GaAs power FET performance. Detailed information
concerning the effects of gate bias changes on gain, input return loss,
and linearity are included. A two-stage linear power amplifier was built
and tested that successfully demonstrated dynamic gate bias
optim...
Two anomalies have been observed in the course of developing
planar wafer level standards for the testing of GaAs monolithic
microwave integrated circuits. The first involves a low-frequency
characteristic impedance change of microstrip and coplanar waveguide
transmission lines. This effect, which is due to conductor loss of the
transmission media,...
A prototype standard set in coplanar waveguide suitable for the calibration of wafer probe stations has been developed through a cooperative effort between the National Institute of Standards and Technology and a MIMIC Phase 3 team. The coplanar standard set is intended primarily for in-process testing, although the characterization of coplanar wav...
This paper describes automated transmit and receive test systems for measuring L- and C-band T/R modules used in the Spaceborne Imaging Radar C (SIR-C) antenna subsystem. The SIR-C antenna subsystem is an active phase array that includes 756 distributed L- and C-band T/R modules. Automated microwave testing of each T/R module is essential to reduce...
Two methods to de-embed coplanar probes using offset coplanar
waveguide shorts and transmission lines are described. The accuracy of
the de-embedded measurements is verified. The S -parameters of
lumped standards provided by the manufacturer of the probes are measured
and found to be suitable for purposes of calibration up to 26 GHz
A transition between a coplanar probe and a microstrip
transmission line is reported. The transition is significant in that it
does not require substrate via holes. A set of microstrip impedance
standards was developed for the purpose of de-embedding the transition.
The latter is suitable for measuring the S parameters of a
number of low-cost monol...
Microwave monolithic integrated circuits (GaAs-MMIC's) and large-scale integrated circuits (GaAs-LSIC's) are being used in advance ground, airborne, or space-based Systems having severe environmental and dynamic loads. GaAs-MMIC and GaAs-LSIC chips are fragile because they are thin and large and also because GaAs is an inherently Weak material. Dat...
This paper describes an automated noise and gain parameter measurement system which operates to 26.5 GHz. A new test set configuration and thorough measurement techniques are employed to minimize errors. The noise and gain parameters for an 0.3 µm gate GaAs FET at 10 and 22 GHz are presented.
This paper describes an automated noise and gain parameter measurement system which operates to 26.5 GHz and incorporates test fixture de-embedding. A unique combination of hardware components, operating software and fundamentally proven measurement techniques have been integrated to form a test system capable of highly accurate and repeatable nois...
GaAs IC symposium: technical digest 1982, New Orleans, November 9, 10, pgs 166-168
Inst. Phys. Conf. Ser., No. 65, Chapter 5, p. 339
An investigation of cleaning procedures prior to metal gate evaporation in GaAs MESFET fabrication was undertaken. A photoresist residue was found to exist after development when using the lift-off technique to define the gate metal pattern. This carbon residue was identified by AES depth profile measurements. Schottky diode electrical characterist...
10th International Symposium on GaAs and Related Compounds
Rinsing GaAs MESFETs under illumination in 18 megohm-cm H 2 O is shown to rapidly degrade the dc characteristics of the device. H 2 O etches a trough around the Schottky barrier gate electrode with an etch rate of at least 22 Å/min. Formation of the trough significantly increases the parasitic resistances of the MESFET.
