Tatiana A. Pisarenko

Institute of Automation and Control Processes | IACP

This paper presents the results of studying the lateral photovoltaic effect in hybrid structures based on SiO 2 /Si depending on the nature of the conductivity of the material of the upper layer (Fe is a metal, Fe 3 O 4 is a semimetal, TiO 2 is a semi-insulator). It is shown that this effect is observed in hybrid structures in which a depleted regi...

We report on the results of a study of the lateral photovoltaic effect in the Fe 3 O 4 /SiO 2 /n-Si(001) structure at temperatures of 300 and 122 K under continuous and pulsed illumination. It is found that when the temperature changes from 300 to 122 K, the LPE sensitivity decreases from 112 to 65 mV/mm. At pulsed illumination, an increase of rise...

We report on the results of a study of the lateral photovoltaic effect in theFe3O4/SiO2/n-Si structure grown on Si(001) and Si(111) substrates. It was found that in theFe3O4/SiO2/Si(001) structure the LPE sensitivity is a half times as much, and the photoresponseparameters are about 3 times less than those in the Fe3O4/SiO2/Si(111) structure. It is...

New techniques for the analysis of complex images were advanced by the example of asurface microrelief of the Fe70Cr15B15 alloys, obtained by the melt-spinning at different linearvelocity of a quenching roller. Proposed techniques are based on the fast Fourier transform of theimage using digital signal processors. The degree of morphological orderi...

We report on the results of the study of the lateral photovoltaic effect in the Fe 3 O 4 /SiO 2 /p-Si structure. It is found that maximum of the lateral photovoltage is localized near the measuring contacts and rapidly attenuates when the light spot moves away from them. Correspondence of the photovoltage sign to the conductivity type of the silico...

We report on the results of the study of the lateral photovoltaic effect in the Fe/SiO 2 /Si structures with n-and p-type silicon. It is found that in both cases the photovoltage signal varies linearly when the light spot moves between the electrodes. It is established that the sensitivity of lateral photovoltaic effect in Fe/SiO 2 /n-Si and Fe/SiO...

The results of a comparative study of the lateral photovoltaic effect in Fe3O4/SiO2/n-Si and Fe3O4/SiO2/p-Si structures are presented. The lateral photovoltage reaches its maximum near the measurement contacts in both structures, but the signs of this voltage differ. As the light spot moves away from the contacts, the photovoltage varies linearly i...

The methods of transmission and reflection electron diffraction have been used to investigate the structure of Fe3O4 films depending on the temperature of their synthesis on an Si substrate coated with an ultrathin layer of SiO2. The thus-grown polycrystalline films of magnetite had a texture, the axis of which was perpendicular to the surface of t...

Polycrystalline films of magnetite (Fe3O4) with thickness of 75 nm were grown on SiO2/Si (001) surface by reactive deposition of Fe in O2 atmosphere. The growth of Fe3O4 films was conducted with the different oxygen pressures. The structure of films was monitored by reflection high-energy electron diffraction (RHEED) during the film growth. It was...

We have studied the effect of tin microalloying on the kinetics of the fractal mesodefect structure of melt-spun Fe70Cr15B15(Sn) alloys during thermal loading. It is established that the morphology evolution of ribbon interfaces correlates with the kinetics of physical properties. Symmetry character of melt-spun alloys is identified by the form of...

Magnetite films (Fe3O4) 75 nm thick were grown on an oxidized Si(001) surface using reactive iron deposition in an oxygen atmosphere. Iron oxide films were grown under different O2 pressures. The structure of the films was controlled during their growth by the reflection high-energy electron diffraction (RHEED) method. It was established that the g...

We have studied the scaling evolution of the structure and magnetic properties of the melt-spun Fe70Cr15B15(Sn) alloys. The magnetic percolation cluster about the percolation threshold forms at the vitrification stage that is determined by both the kinetics of magnetic and of transport properties and the variation of fractal dimensionality. Alloyin...

Polycrystalline magnetite films with the thickness of 50 nm were grown on SiO2/Si(001) surface by the reactive deposition of Fe in O2 atmosphere using various preparation ways of the formation of iron oxide seed layer. The seed layers were formed by the deposition and oxidation of 3 nm Fe layer at different thermal conditions. It was found that pol...

The temperature dependencies of the resistivity of planar structures Fe3O4/SiO2/n-Si, with Fe3O4 films of different thicknesses, were investigated. In the temperature range below 125 K, an anomalous decrease in the resistivity was observed. This effect is explained by switching of the conductance channel from the Fe3O4 film to the inversion layer o...

In this paper a method of characterization of network structures with multiscale hierachical periodicity in the spectral representation is suggested. The informodynamic analyses of the degree of similarity of complicated systems with different level of organization was established as the result of convolution of diffraction patterns. The indicator...

Polycrystalline films of magnetite (Fe3O4) formed by the reactive sputtering of iron in oxygen on Si(001) substrates covered by thin (1.4 nm) or thick (1200 nm) SiO2 layers have been studied by Raman spectroscopy. It is established that (i) the α-Fe2O3 phase is formed due to the laser-induced heating in magnetite films synthesized on thick SiO2 lay...

Magnetite (Fe3O4) films have been deposited on a SiO2/Si(001) surface at various temperatures by reactive sputtering of iron in oxygen. The influence of the synthesis temperature on the structure and magnetic properties of Fe3O4/SiO2/Si(001) samples have been studied by the methods of reflection high-energy electron diffraction, atomic force micros...

Magnetite polycrystalline films are grown by variously oxidizing a Fe film on the Si(111) surface covered by a thin (1.5 nm) SiO2 layer. It is found that defects in the SiO2 layer influence silicidation under heating of the Fe film. The high-temperature oxidation of the Fe film results in the formation of both Fe3O4 and iron monosilicide. However,...

The effect of annealing on the magnetic and electrical properties and structural state of iron-based melt-spun ribbons was investigated. A comparative analys is of the behavior of specimens during their amorphous-to-crystalline transition revealed differences between their structural relaxation scenarios at the level of atomic ordering; the value a...

Ultrathin films of iron silicide have been grown by high-temperature annealing of 0.14-to O.5O-nm-thick Fe films deposited on the Si(001) surface at room temperature. It has been found that annealing leads to the formation of nanoislands of iron silicide on the surface, so that their type depends on the thickness of the Fe film. High-energy electro...

Comparative study of solid phase epitaxy (SPE) of iron suicides on Si(001)2×l and boron modified Si(001)4×4-B was conducted for iron coverage, which was varied from 0.6 to 11.3 monolayers (MLs). It was found that annealing of Fe film at 800°C leads to formation of islands of iron suicide, whose type depends on the Fe film thickness. Using reflectio...

The kinetics of the evolution of the structure and phase composition of the Fe/SiO2/Si(001) system under different conditions for deposition of the iron layer and subsequent annealing is considered. It is established that the SiO2 thin layer (∼1 nm) is not destroyed during iron deposition over a wide temperature range from 20 to 650°C. As a result,...

The investigation of the codeposition process of iron and silicon (at a ratio of 1:2) on SiO2/Si(001) surface was carried out at various substrate temperatures. A thin dioxide silicon layer (∼1 nm) was formed on Si(001) substrate by wet chemical treatment. It was found that the codeposition at room temperature results in the growth of continuous di...

Kinetics of structure and phase constitution of Fe/SiO2/Si(001) system under different conditions of deposition and annealing was considered. It was established that SiO2 layer is not destroyed during Fe deposition process over the temperature range from 20 to 650° C. As a result, the Fe films having different morphologies are formed on the oxide s...

The Penrose mosaic as the minimum representative of quasicrystals is discussed in terms of generalized planar lattice models. The role of these models is played by Cayley’s tree graphs which, in the general case, are characterized by quasi-random branching. A three-level golden alphabet is defined, and a Penrose mosaic is synthesized with the aid o...

Structural relaxation of mesodefect networks in amorphous Co-Ni-P films during low-temperature isothermal annealing (T=175°C) is studied. A mathematical model in which network structures are presented in the form of stochastic flows of intersections of network boundaries is used. The two-stage nature of the annealing process, which is also reflecte...

Mapping of network structures of defects in quartz and metallic glasses onto random Cayley's trees has been performed. The probability characteristics of quasistochastic coordination trees are established, and it is shown that these trees belong to the Markov jungles. The structure of stochastic Cayley's trees is set by the non-Euclidean ultrametri...