Sonia Soltani

Qassim University

The aim of this work is to propose an electrothermal model for predicting the electron mobility, the effective thermal conductivity, and the operating temperature of AlGaN/GaN HEMT devices. The suggested model comprises an enhanced ballistic-diffusive model (BDE) coupled with a drift-diffusion model (D-D). Furthermore, the given model considers tot...

Correction for ‘Light-enhanced electrical behavior of a Au/Al-doped ZnO/p-Si/Al heterostructure: insights from impedance and current–voltage analysis’ by Majdi Benamara et al. , RSC Adv. , 2023, 13 , 28632–28641, https://doi.org/10.1039/D3RA06340B.

Pure zinc oxide nanoparticles, as well as those doped with 3% calcium, aluminum, and gallium, were synthesized using a sol-gel method and then deposited onto an alumina substrate for sensing tests. The resulting nanoparticles were characterized using a variety of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM) equi...

In this study, we meticulously deposited an Al-doped ZnO nanoparticle thin film on a p-type silicon substrate using the precise sputtering method. We conducted a comprehensive exploration of the film's structure, morphology, and optical properties. X-ray diffraction (XRD) confirmed its polycrystalline wurtzite configuration with a dominant (002) or...

In this paper, we have studied the critical behavior and the magnetocaloric effect (MCE) simulation for the La0.75Ca0.1Na0.15MnO3 (LCNMO) compound at the second order ferromagnetic-paramagnetic phase transition. The optimized critical exponents, based on the Kouvel-Fisher method, were found to be: β = 0.48 and γ = 1. These obtained values supposed...

Maxwell's equations and plank theory appear to give different results for the interaction of electromagnetic field with matter. In this work Maxwell's equations, plank hypotheses, beside green's function in addition to special relativity were used to join the two versions. The new model predicts a very small photon energy having an order of ~10 −50...

Maxwell's electric equation and Schrödinger quantum equation are used to find useful expressions for the probability of electrons existence and the electrons transport. The first expression which uses special relatively also shows that the probability of the electrons existence is higher for lower energy states compared to higher energy states wher...

We investigated the structural and optical properties of AlGaN films grown on SiN-treated sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic vapor phase epitaxy. The samples were characterized using high-resolution X-ray diffraction (HR-XRD), time-resolved photoluminescence (TR-PL), and photoreflectance (PR) s...

In this paper, we present a systematic study of the optical properties evolution of GaN films during the complete growth process on SiN-treated sapphire substrates by atmospheric pressure metalorganic vapor phase epitaxy. The growth process was monitored using in-situ laser reflectometry and was interrupted at different stages to obtain the studied...

In this work, the effects of thermal ionized-impurities and mosaicity on the excitonic properties of GaN are systematically investigated. For this reason, a number of GaN epilayers with different impurity/defect concentrations have been grown on c-plane sapphire substrates by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE). Variable-t...

The effect of growth conditions on the Al composition and optical properties of AlxGa1 −xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG), while other growth...

Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied b...

This work reports on the photoreflectance (PR) study of Si doped GaN layers (GaN:Si) with different doping levels (2.1 Â 10 17 –2.8 Â 10 19 cm À 3). GaN:Si samples have been successfully grown on sapphire substrate by metalorganic vapor phase epitaxy (MOVPE). Room temperature PR spectra showed Franz– Keldysh oscillation (FKO) features, reflecting t...

In this paper, we report a systematic investigation of the near band edge (NBE) excitonic states in GaN using low temperature photoluminescence (PL) and photoreflectance (PR) measurements. For this purpose, GaN films of different thicknesses have been grown on silicon nitride (SiN) treated c-plane sapphire substrates by atmospheric pressure metalor...

This work reports on the photoreflectance (PR) study of Si doped GaN layers (GaN:Si) with different doping levels (2.1×1017-2.8×1019 cm-3). GaN:Si samples have been successfully grown on sapphire substrate by metalorganic vapor phase epitaxy (MOVPE). Room temperature PR spectra showed Franz-Keldysh oscillation (FKO) features, reflecting the existen...