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Energy-Efficient High-Speed dynamic logic-based One-Trit multiplier in CNTFET technology

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... The systematic offset of OP1 plays a significant role in BGR performance with respect to temperature [19,20]. Equation (6) shows that VOS is amplified using a ratio of due to the closed-loop nature of the BGR, and this amplification factor is so large that it might impact the TC of the output voltage. ...
... The systematic offset of OP1 plays a significant role in BGR performance with respect to temperature [19,20]. Equation (6) shows that VOS is amplified using a ratio of R 2 R P due to the closed-loop nature of the BGR, and this amplification factor is so large that it might impact the TC of the output voltage. ...
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... Multipliers constitute a significant portion of computer arithmetic units, leading to considerable energy and time consumption. Haq, Shams Ul, Erfan Abbasian, et.al [9] developed appeal of portable electronics, embedded systems, and other smart devices steadily growing over time. The multi-valued logic (MVL) was primarily introduced to handle the interconnect issues in binary logic. ...
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Multipliers are basic building blocks in various integrated circuits like microprocessors, micro controllers, and ALUs. The existing multipliers suffer from high power consumption and inefficient use of hardware resources. They often rely on traditional adder structures that are not tailored for specific operations, leading to suboptimal performance. Additionally, their fixed architectures limit adaptability and scalability in different applications. So, the proposed approach offers enhanced computational efficiency and reduced power consumption compared to conventional multiplier designs. By integrating multiplexer-dependent adders into the systolic array, the proposed method optimizes resource utilization and delivers improved performance for various arithmetic operations. This integration allows for dynamic selection of adder types based on the specific multiplication operation, significantly reducing power consumption and latency. By adapting the hardware resources to computational needs, the method achieves higher efficiency and flexibility, making it suitable for a wide range of applications in digital signal processing and data processing systems.
... 3-D schematic of MOSFET-like CNTFET[17]. ...
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... Ternary logic is a form of MVL comprising three logic levels: '0′ (ground), '1′ (V DD /2), and '2′ (V DD ) [62,63,64]. The principal goal of ternary logic designers is to generate the logic level '1′, achieved through voltage division using series-connected transistors or utilizing two power supplies [65,66,67]. ...
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A power-efficient, voltage gain enhancement technique for op-amps has been described. The proposed technique is robust against Process, Voltage and Temperature (PVT) variations. It exploits a positive feedback-based gain enhancement technique without any latch-up issue, as opposed to the previously proposed conductance cancellation techniques. In the proposed technique, four additional transconductance-stages (gm stages) are used to boost the gain of the main gm stage. The additional gm stages do not significantly increase the power dissipation. A prototype was designed in 65[Formula: see text]nm CMOS technology. It results in 81[Formula: see text]dB voltage gain, which is 21[Formula: see text]dB higher than the existing gain-boosting technique. The proposed op-amp works with as low a power supply as 0.8[Formula: see text]V, without compromising the performance, whereas the traditional gain-enhancement techniques start losing gain below a 1.1[Formula: see text]V supply. The circuit draws a total static current of 295[Formula: see text][Formula: see text]A and occupies 5000[Formula: see text][Formula: see text]m ² of silicon area.
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Silicon based technology encounters scaling parameters that prohibit the advancement of transistor technology. Graphene nanoribbons (GNR) and carbon nanotubes (CNT) are often considered the predominating devices to replace silicon technology. Carbon nanotube field effect transistors (CNTFETs) are considered the most promising devices because of their most interesting properties such as high current carrying ability (∼ 1010 A/cm²), excellent carrier mobility, scalability, high reliability for elevated temperature operation, and negligible leakage current. In this paper, a comparative analysis of CNTFET and graphene nanoribbon field effect transistors (GNRFET) is presented. The results of simulations are presented, and comparisons of devices are done based on different parameters listed as ION/IOFF current ratio, trans-conductance, and inverse subthreshold slope using NanoTCAD ViDES. After simulation, it is shown that CNTFET offers better results for ION/IOFF on the order of 10⁶, subthreshold swing (SS) as 74.4 mV/dec, and transconductance as 7.6 μS. Further the effect of oxide thickness and dielectric constant has been studied for both FET devices. At the end, it is concluded that CNTFET offers better simulation result than that of GNRFET.
Chapter
Often Bandgap Reference performance limits the SNR of the bio-medical transceiver, hence sensitivity. In this paper, conventional beta multiplier has been explored to design a new low voltage pure CMOS bandgap architecture, which avoids op-amps and resistors, hence very less mismatch and area. Line sensitivity has been improved by adding an extra gain stage in the circuit. The circuit implementation of the proposed technique was done in 65 nm TSMC CMOS technology to generate 460 mV output voltage. The minimum operating voltage of the circuit is 650 mV. Post-layout simulation results are as follows, 31 ppm/\(^{\circ }\)C temperature coefficient against temperature variation of −40\(^{\circ }\) to 125 \(^{\circ }\)C, 0.5% regulation against supply variation of 0.65−1 V and 0.42% PVT variation. Circuit draws 2.3 A current from 650 mV from power-supply. The proposed band gap reference occupies 0.00144 mm\(^{2}\) silicon area.
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This paper explains the hidden positive feedback in a two-stage fully differential amplifier through external feedback resistors and possible DC latch-up during the amplifier start-up. The biasing current selection among the cascade branches has been explained intuitively, with reference to previous literature. To avoid the latch-up problem, irrespective of the transistor bias currents, a novel hysteresis-based start-up circuit is proposed. An 87dB, 250MHz unity gain bandwidth amplifier has been developed in 65nm CMOS Technology and post-layout simulations demonstrate no start-up failures out of 1000 Monte-Carlo (6-Sigma) simulations. The circuit draws 126μA from a 1.2V supply and occupies the 2184μm2 area.
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In existing CNFET-based design methodologies that are used to implement ternary logic circuits, ternary signals are first converted to binary signals, which are then passed through binary gates and an encoder to get the final ternary output. In a ternary circuit, encoder is used to convert intermediate binary signals to final ternary outputs. This paper presents improved encoder designs which are used in implementation of ternary logic circuits. A detailed analysis is carried out on encoders to understand the effect of using CNFETs with CNTs of different diameter on the overall propagation delay and power consumption of the encoder. Based on this analysis, algorithms, which choose appropriate encoders for different output stages of a ternary circuit while optimizing different design parameters like power consumption, propagation delay or power-delay product, are presented. These algorithms are used to map appropriate encoders for different outputs of a ternary adder resulting in adder designs which are optimized for delay, power or power-delay product. Simulation results indicate that the ternary adder designs, which use encoder mapping obtained from proposed algorithms, result in 54 $\times$ 82% reduction in power consumption, 0 $\times$ 75% in propagation delay and 54 $\times$ 94% in power-delay product when compared to different existing ripple carry-based ternary adders.
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This paper presents the design and measurements of a 32-Gb/s differential-input differential-output transimpedance amplifier (TIA) employed in dual polarization integrated coherent receivers for 100-Gb Ethernet. A circuit technique is shown that uses a replica TIA to stabilize the operating point of the two shunt-feedback input stages as well as to cancel the dc part of the two complementary input currents and balances their offset. The TIA can be operated in two modes, an automatic gain control mode to retain a good total harmonic distortion (THD) over a wide dynamic range and a manual gain control mode. Electrical as well as optical-electrical characterization of the TIA are presented. It achieves a maximum differential transimpedance of 74 dBΩ, 33 GHz of 3-dB bandwidth, 12.2 pA/√Hz of average input-referred noise current density with the photodiode, 900 mV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> of maximum differential output swing, less than 1% of THD for 600 mV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> differential output swing, and 500 μA <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> differential input current. The linearity of the TIA is furthermore demonstrated with PAM4 measurements at 25 Gbaud. The dual TIA chip is fabricated in a 0.13-μm SiGe:C BiCMOS technology, dissipates 436 mW of power and occupies 2 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of area.
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This brief presents a multiternary digit (trit) multiplier design in carbon-nanotube field-effect transistor (CNTFET) technology using unary operators of multivalued logic. The proposed structure is based on the classical Wallace multiplier and includes a novel ternary multiplexer design requiring only a small number of CNTFETs. Two ternary full-adder configurations are also proposed based on an examination of the multiplier structure. In addition, the design includes a new single-trit multiplier which requires 67% less CNTFETs compared to a recent design. HSPICE simulations reveal low power-delay product for the proposed designs for different choices of drive strength. Furthermore, the designs are comparable to prior works with respect to noise margin.
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In this paper we present an exhaustive description of the basic types of CNTFETs. In particular we review two models, already proposed by us, which allow an easy implementation in circuit simulators, both in analog and in digital applications.