Pegah Ghamari

Pegah Ghamari
McGill University | McGill · Department of Electrical & Computer Engineering

PhD

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17
Publications
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461
Citations

Publications

Publications (17)
Article
Full-text available
The combination of earth-abundant catalysts and semiconductors, for example, molybdenum sulfides and planar silicon, presents a promising avenue for the large-scale conversion of solar energy to hydrogen. The inferior interface between molybdenum sulfides and planar silicon, however, severely suppresses charge carrier extraction, thus limiting the...
Article
Full-text available
Nitro group (NO2) is one of the most common electron-withdrawing groups but it has rarely been used in the design of organic semiconductors (OSCs). Herein, we report n-type semiconducting behavior of simple fluorenone derivatives functionalized with NO2 and CN groups. While the electron mobilities measured in thin film field-effect transistors are...
Article
Molecular doping has emerged as a powerful strategy to tune the charge transport properties of organic field-effect transistors (OFETs). However, the limited tool-box of molecular dopants and unresolved challenges of stability, uniformity of the doping, and matching the energy levels constrain the achieved OFET device performance and thwart the pra...
Article
Operational instability of organic field-effect transistors (OFETs) is one of the key limitations for applications of printed electronics. Environmental species, especially oxygen and water, unintentionally introduced in the OFET channel, can act as either dopants or traps for charge carriers, affecting the electrical characteristics and stability...
Article
We explore a series of furan‐based non‐fullerene acceptors and report their optoelectronic properties, solid‐state packing, photodegradation mechanism and application in photovoltaic devices. Incorporating furan building blocks leads to the expected enhanced backbone planarity, reduced bandgap and red‐shifted absorption of these acceptors. Still, t...
Article
Full-text available
We explore a series of furan‐based non‐fullerene acceptors and report their optoelectronic properties, solid‐state packing, photodegradation mechanism and application in photovoltaic devices. Incorporating furan building blocks leads to the expected enhanced backbone planarity, reduced band gap and red‐shifted absorption of these acceptors. Still,...
Article
Full-text available
Photoelectrochemical CO2 reduction into syngas (a mixture of CO and H2) provides a promising route to mitigate greenhouse gas emissions and store intermittent solar energy into value-added chemicals. Design of photoelectrode with high energy conversion efficiency and controllable syngas composition is of central importance but remains challenging....
Data
The nitro group (NO2) is one of the most common electron-withdrawing groups but it has rarely been used in the design of organic semiconductors (OSCs). Herein, we report the n-type semiconducting behavior of simple fluorenone derivatives functionalized with NO2 and CN groups. While the electron mobilities measured in the thin film field-effect tran...
Article
Photoelectrochemical conversion of CO2 with H2O into high-energy fuels and value-added chemicals such as HCOOH provides an appealing strategy for storing solar energy and closing anthropogenic carbon cycle. However, a rational design of catalytic architecture enabling high turnover frequency (TOF) for the large-scale application has remained a gran...
Article
Photoelectrochemical conversion of CO2 with H2O into high-energy fuels and value-added chemicals such as HCOOH provides an appealing strategy for storing solar energy and closing anthropogenic carbon cycle. However, a rational design of catalytic architecture enabling high turnover frequency (TOF) for the large-scale application has remained a gran...
Article
Full-text available
To date, the performance of semiconductor photoanodes has been severely limited by oxidation and photo‐corrosion. Here, a report is given on the use of earth‐abundant MoSe2 as a surface protection layer for Si‐based photoanodes. Large area MoSe2 film was grown on p+‐n Si substrate by molecular beam epitaxy. It is observed that the incorporation of...

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