Maxime BouschetNASA · Microdevices Laboratory (MDL)
Maxime Bouschet
PhD
Postdoctoral fellow working for JPL NASA on avalanche photodiodes based on superlattices for infrared applications.
About
13
Publications
1,840
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44
Citations
Introduction
I'm currently working on a new type of cooled high-performance photo-detectors for MWIR application, called Type-II Superlattice (T2SL) barrier structure.
Additional affiliations
October 2020 - present
LYNRED
Position
- PhD Student
Description
- I'm working on new Infrared detectors architecture
October 2019 - present
February 2019 - August 2020
Position
- Master's Student
Description
- I was working on the surface state of Germanium-Tin alloy (GeSn) by X-ray Photoelectron Spectroscopy instrument. I was investigating the band structure of GeSn by PhotoEmission Electron Microscopy, a surface characterization method using photoelectron
Education
September 2014 - August 2019
Publications
Publications (13)
In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated...
In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having a cut-off wavelength of 5 µm at 150 K. This study shows the strong...
In this paper, we study the influence of three different etching depths on electrical and electro-optical properties of non-passivated T2SL nBn Ga-free pixel detector having a cut-off wavelength of 5 µm at 150 K. The study shows the strong influence of lateral diffusion length on the shallow etched pixel properties and therefore, the need to perfor...
We have investigated with X-ray Photoelectron Spectroscopy (XPS) the impact of different wet cleanings on the surface of thick GeSn 13% direct band-gap layers grown on germanium strain relaxed buffers. The XPS time-dependent study showed a fast Ge re-oxidation after only a few minutes, while tin was more stable. A dip in (NH4)2S after the 5 min sur...
This paper reports the influence of proton irradiation on the dark current of Ga-free InAs/InAsSb type II superlattice (T2SL) midwave infrared barrier photodetectors, with a cut-off wavelength of 4.8 μm at 150 K. The proton irradiation is performed with 60 MeV protons and fluence up to 8×10
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In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice mi...
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a mesa device in order to perform dark current measur...
In this paper, an electro-optical investigation is carried out to study the anisotropic behavior of a mid-wavelength infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) XBn barrier detector. The main goal was to improve our understanding of the transport mechanisms in this device. Quantum efficiency measurements are performed on mesa de...
Barrier structures are now the design of high performance antimonide-based (Sb-based) cooled infrared (IR) quantum detectors. In this communication, we report on electrical and electro-optical characterizations of Ga-free and Ga-containing type-II superlattices (T2SL) photodetectors structures grown by Molecular Beam Epitaxy (MBE). Experimental mea...
