ArticlePDF Available

Design of Efficient Class-E Power Amplifiers for Short-Distance Communications

Authors:

Abstract and Figures

This paper presents a new Class-E power amplifier (PA) with a π-matching output network. The PA is targeted at low output power wireless applications. Analytical formulae are derived to aid the PA design, characterization and optimization. A fully integrated 2.4-GHz PA for short distance communications has been implemented in 0.13 μm CMOS technology to verify the proposed design method. The measured output power levels vary from - 3.2 to 5.7 dBm while achieving maximum overall efficiency of 55%.
Content may be subject to copyright.
2210 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 59, NO. 10, OCTOBER 2012
Design of Efcient Class-E Power Ampliers for
Short-Distance Communications
Jun Tan, Student Member, IEEE, Chun-Huat Heng, Member, IEEE, and Yong Lian,F
ellow, IEEE
Abstract—This paper presents a new Class-E power amplier
(PA) with a -matching output network. The PA is targeted at
low output power wireless applications. Analytical formulae are
derived to aid the PA design, characterization and optimization.
A fully integrated 2.4-GHz PA for short distance communications
has been implemented in 0.13 m CMOS technology to verify the
proposed design method. The measured output power levels vary
from 3.2 to 5.7 dBm while achieving maximum overall efciency
of 55%.
Index Terms—Circuit theory, class-E, efciency, low-power, non-
linear circuits, power amplier.
I. INTRODUCTION
LOW power transmitter design requires to optimize the
energy efciencies of key building blocks including
VCO, mixer, and PA [1], [14]–[28]. Class-E PA is a nonlinear
switching type power amplier which can ideally achieve 100%
efciency. This high efciency has spurred many research in-
terests on the design and analysis of Class-E PAs [1]–[20]. A
typical Class-E PA is shown in Fig. 1. The transistor serves as
an on/off switch. The reactance, , can be either capacitive
or inductive, depending on the desired output power level [1].
An output matching network is usually required to match the
antenna’s 50 resistance to a different value, .Asthe
matching network’s quality factor is normally limited, a
serial resonant lter composed of and is incorporated
to create a short circuit at the desired switching frequency, and
block all the undesired higher harmonic components to reach
the output. The Class-E PA requires the periodical steady-state
(PSS) waveform of to satisfy the following two criteria
[1]–[8], [20]: at the instance when the switch is turned on, (1)
the drain voltage of the switch equals to 0; and (2) its time
derivative also equals to 0, as shown in Fig. 1(b).
The Class-E PAs can be categorized into two types according
to the inductor’s function: Class-E PA with RF choke inductor
or with DC feed inductor [1]. For the former case, the RF choke
inductor maintains the DC biasing while behaves like an open
circuit at the desired output frequency. Design equations for
Manuscript received August 12, 2011; revised December 17, 2011; accepted
January 18, 2012. Date of publication April 03, 2012; date of current version
September 25, 2012. This work was supported by the Singapore Agency for Sci-
ence, Technology and Research (A*STAR), Science & Engineering Research
Council under Grant: 092-148-0066. This paper was recommended by Asso-
ciate Editor Y. Sun.
The authors are with Department of Electrical and Computer Engineering,
National University of Singapore, Singapore 117576 (e-mail: eletj@nus.edu.sg;
elehch@nus.edu.sg; eleliany@nus.edu.sg).
Digital Object Identier 10.1109/TCSI.2012.2188951
Fig. 1. (a) Circuit diagram of the conventional Class-E PA. (b) PSS wave-form
of the drain voltage.
Class-E PA with RF choke are discussed comprehensively in
[5] and [6]. For the latter case, generalized design methodolo-
gies are presented in [1]–[4].
The existing works of Class-E PA mostly focus on designs
optimized at high outputlevel,rangingfrom23to33dBm
[9]–[13]. If these PAs are used at lower output level, the overall
efciency signicantly degrades. In [14] the PA is built based on
injection-locked oscillators (ILO) which works in Class-E type.
However the power added efciency (PAE) drops from 44.5%
to 30% when the output power level decreases from 11.1 dBm to
6dBm.Formostsh
ort distance communication, such as Blue-
tooth and ZigBee, the output power ranges between 0 to 10 dBm
[20]–[22]. Therefore, it is critical to look at the optimization of
class-E PA withhighenergyefciency at low power levels.
To deliver low output power, the equivalent impedance
in Fig. 1(a) is usually chosen to be comparable to or even higher
than 50 [25]. If functions as RF choke, its impedance
should be much higher than to maximize the AC current
delivery to the output. This usually results in too high an in-
ductance value to be implemented practically on-chip. For ex-
ample at 2.4 GHz, of 33.2 nH is needed to have its reac-
tance 10 times larger than . Therefore, Class-E PA
with functions as RF choke is not suitable for output power
below 10 dBm. In addition, the series resonant network (
and )n
eeded for larger harmonic rejection also imposes in-
ductance constraint, which makes the on-chip integration dif-
cult. It should be pointed out that due to low for high power
1549-8328/$31.00 © 2012 IEEE
TAN et al.: DESIGN OF EFFICIENT CLASS-E POWER AMPLIFIERS 2211
Fig. 2. Circuit Model of the Class-E PA. (a) Conventional Structure. (b) Pro-
posed Structure.
applications, the inductance constraint discussed above is much
relaxed.
To circumvent this inductance constraint for low power appli-
cations, we present a new Class-E PA architecture in this paper
to facilitate fully integrated PA solution. The paper is organized
as follows. In Section II, we present the circuitry of the pro-
posed PA and its qualitative analysis. The analytical equations
are derived in Section III to characterize the proposed Class-E
PA. Section IV presents the analysis and design methodologies
for the proposed PA. A design example of a 2.4-GHz PA is pre-
sented in Section V to verify our circuitry and theories, and is
then followed by the conclusion in Section VI.
II. THE PROPOSED CLASS-E PA
The inductance constraint imposed by can be relaxed
if it functions as DC feed [1] instead of RF choke. To ob-
viate the need for large inductance in series resonant network
, different topology has to be employed. Fig. 2
illustrates our proposed idea which considers impedance net-
work right after the impedance . Conventionally, only series
resonant network is used to improve the harmonic rejection. For
Fig. 2(a) with large (required for low output power), the re-
jection ratio is directly related to ,where
is the desired output frequency, and is the harmonic
generatedbyClass-EPA . To improve the rejection, we
have no choice but to increase and thus . For Fig. 2(b),
a parallel network is added. Now the rejection ratio would
depend on the ratio of
to for .Better
harmonic rejection would require and
, which implies a capacitive network
and inductive networks respectively. Due to presence of ,
it relaxes the requirement on to achieve same harmonic
rejection. This will reduce the and allow better integration.
The proposed new circuitry of the Class-E PA is shown in
Fig. 3. The inductor is chosen as DC feed. The capacitor
functions as which provides alternative current path for
higher harmonics. The inductor and the capacitor form
an impedance matching network which transforms the antenna
resistance to at the desired output frequency .The
inductor also functions as which helps reducing higher
harmonics current component. Unlike conventional structure,
the harmonic rejection is now provided by both and .This
allows smaller to be chosen for on-chip integration. It should
be pointed out that the proposed architecture has merged the
harmonic rejection and impedance matching into a -network
consisting of ,and . For the proposed architecture, the
Fig. 3. Circuitry of the proposed Class-E PA.
Fig. 4. Simplied circuit model.
drain parasitic capacitance of switching transistor can be incor-
porated into , whereas the pad parasitic can be merged with
. Therefore, the circuit shown in Fig. 3 can be a compact
representation of the actual implemented PA with all parasitic
taken into considerations. As the proposed architecture is dif-
ferent from the existing class-E PA, a new set of design formulae
needs to be derived for optimization purpose.
As there are now a total of six reactive elements ( ,,and
to ), it offers more design freedoms in PA optimization
as compared with the original architecture. The detailed com-
ponent selection will be discussed next.
III. ANALYTICAL DESIGN EQUATIONS FOR THE PROPOSED
CLASS-E PA
The Class-E PA conditions are dened solely in the time do-
main. The PSS solutions are needed to design the PA. The fol-
lowing assumptions are made before we derive the design equa-
tions.
1) The resistor is the only component which dissipates
power. The transistor serves as an ideal switch with an ‘on’
resistance of 0 and ‘off’ resistance of innity.
2) The current waveform of the inductor is sinusoidal
(high- assumption).
The second assumption implies that the output network has a
high harmonic rejection and thus high quality factor. This is
achieved through and in our architecture. Similar sim-
plications have been made in [1], [4] and [5] as well to obtain
explicit solutions.
With the above approximations, a simplied circuit model is
shown in Fig. 4. The current of the inductor is denoted by
. The ideal switch is driven by an input square wave, ,
with a period of . The switch is turned off from 0 to ,and
turned on from to .Theratioof to is dened as the
on time duty cycle .Let denote the angular frequency of
the driving voltage of the switch, which satises: .
The output current represents the current of the inductor
in Fig. 3, and is given as
(1)
2212 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 59, NO. 10, OCTOBER 2012
where is the amplitude of the current and is the phase dif-
ference between the output current and the input voltage.
Suppose the supply voltage , the angular frequency of
the driving signal ,andtheontimedutycycle are known.
There are totally six unknown variables in the circuitry in Fig. 4,
namely , , , , ,and . To determine these variables,
six independent equations are required. The Class-E conditions
dene two equations as below [1]–[8], [20]
(2)
(3)
where is the PSS waveform of the switch voltage with a
period of . Therefore, four additional equations are required
to solve all the six unknowns. We dene four design variables
, , and , which are depicted in (4) to (7)
(4)
(5)
(6)
(7)
where is the total equivalent capacitance at the switch node,
is related to the capacitance ratio of and ,is the ratio of
the parallel capacitance to ,and is the normalized fre-
quency dened by and . These four new variables would
be the key design variables. Once determined, the actual compo-
nent values of and can be determined subsequently.
The remaining two unknown variables of ,and are derived
next.
When the switch is off , the state equations of the
system are given by the ordinary differential equations (ODE)
of (8), (9) and (10).
(8)
(9)
(10)
When the switch is on , the voltage is pulled to
zero. The state equations become
(11)
(12)
The general solutions of the ODE set of (8), (9) and (10) are
given below when
(13)
(14)
(15)
The variable in (13) and (15) is dened as
(16)
When , the waveforms of and can be ob-
tained from the ODE set of (11) and (12). The initial conditions
of and are computed from (14) and (15). The so-
lutions are given by
(17)
(18)
The three variables of ,and are determined by the
boundary conditions of the voltage waveform of during
. The initial condition of is given by .
The voltage and its derivative at are denedbythe
Class-E conditions in (2) and (3). As a result, by substituting
depicted by (13) into these three equations, ,and
maybeobtainedbysolvingthelinear algebraic equations (AE)
shown at the bottom of the page. The detailed expressions of
the sub-functions of and are provided in
Appendix B.
(19)
(20)
(21)
TAN et al.: DESIGN OF EFFICIENT CLASS-E POWER AMPLIFIERS 2213
The PSS conditions require all the waveforms to be periodical
with a cycle of . This implies that ,and satisfy the
following three conditions: , ,
and . From (13), (14), (17) and (19)–(21), it
can be seen that the rst two conditions are already satised for
arbitrary . By substituting given by (15) and given
by (18) into the third condition, the required phase difference
can be derived by solving the AE. The result is given by (22).
The detailed expressions of the sub-function and
are given in Appendix B
(22)
The constant is related to the DC component of ,andit
is relatively trivial in characterizing the PA. Its detailed expres-
sion is omitted here.
From the above analysis it can be seen that by choosing ,
,,and as free design variables, all the six unknowns in
Fig. 4, namely , , , , ,and can be solved explicitly
from (4)–(7), (16), (21), and (22). The PSS waveforms of the
system are also determined by (13)–(22).
The output network composed of and are determined
from the output current and the voltage waveform of
. The current through the inductor (in Fig. 3) should
be equal to (in Fig. 4). As is a periodical function,
it can be expanded into Fourier series
where and are the voltage amplitude and phase offset
at the harmonic frequency respectively. At the fundamental
frequency , the equivalent output impedance seen from the
left of the output current source in Fig. 4 is
(24)
where and are the real and imaginary parts
of the impedance . The expressions to compute and
are derived from PSS waveform of . The detailed formulae
are given by (36)–(39) in Appendix A.
From the circuit in Fig. 3, it can be seen that the equivalent
output impedance seen from the left of the inductor at
the fundamental frequency can be calculated by
(25)
By equating (24) and (25), the component values of and
can be obtained from
(26)
(27)
TAB L E I
NORMALIZED COMPONENT VALUES OF THE PROPOSED PA
where and can be calculated from (24) and
(36)–(39).
To summarize the above analysis, the component values of
the proposed PA are listed in Table I. Note the normalized ca-
pacitance and inductance are dened as
(28)
(29)
The output power of the PA can be computed by averaging
the current through as follows:
(30)
The function is described by (40) in Appendix A.
IV. ANALYSIS AND DESIGN OF FULLY INTEGRATED
CLASS-E PA
In this section, we discuss the design perspectives of the pro-
posed Class-E PA. Relationships between the design variables
and the PA’s performance are briey studied. Simplied design
equations are provided to approximate the PA’s output power
and the values of and . We also present the methodolo-
gies on the selection of the component values of the proposed
PA to meet the integration criteria.
The PAs output power is given by (30). It scales linearly with
and the square of the supply voltage. The output power
is also related to the design parameters of and . By setting
the normalized equivalent capacitance to be 10 mF, the
relationships between the output power and the normalized fre-
quency under different duty cycle are shown in Fig. 5. The
output power decreases with larger and smaller . As illus-
trated, the desired output power level has strong dependencies
on . For the targeted moderate and low output power ( 10
dBm), of 0.4 or 0.5 can be chosen.
The current of the DC feed inductor is also plotted in
Fig. 6. When approaches 0, behaves like RF choke and ex-
hibits almost constant DC current. As increases, functions
as DC feed inductor and it exhibits higher AC current swing.
The current through the switch when it is turned on can be com-
puted by the summing the currents through and .Itswave-
form is plotted in Fig. 7. The duty cycle is chosen to be 0.5 and
equals to 10 mF. The current through the switch increases
gradually from 0, which veries the soft switching feature of the
Class-E PA [20]. The switch transistor should be large enough
such that the voltage drop across it is close to zero.
The PSS waveform of the switch voltage is plotted in
Fig. 8. The supply voltage is set to 1-volt. and are both
chosen to be 0.3. The waveform deviates gradually from the
2214 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 59, NO. 10, OCTOBER 2012
Fig. 5. Output power of the PA versus the normalized frequency . The supply
voltage is set to 1-Volt. The switch duty cycle changes from 0.4 to 0.6.
.
Fig. 6. Current waveform of the inductor . . .
Fig. 7. Current of the switch when it is turned on. . .
Class-E requirements with larger . This is because the error
caused by the high- assumption is larger when increases. A
smaller value implies larger value of , which helps to divert
Fig. 8. PSS waveform of voltage when the switch is off. .
TAB L E I I
POLYNOMIAL COEFFICIENTS TO ESTIMATE OUTPUT POWER
the higher harmonic components to ground. Hence, the high-
approximation is more valid for smaller .If is chosen to be
0.3, simulation results indicate that it is proper to choose
for and .8 for .
Although all the explicit equations have been derived in the
previous section, the equations for computing the PA’s output
power and the component values of and are quite com-
plicated. Simplied design equations are provided here to ease
computation. Cubical polynomial approximations are used to
compute these variables. Least squares tting techniques are
used to derive all the polynomial coefcients. The errors caused
by these approximations are below 3%. The PA’s output power
can be estimated by the following equation for .
(31)
The polynomial coefcients of for different
duty cycle are summarized in Table II.
The inductance value depicted by (26) is related to ,
, , ,and . To simplify analysis, and are both xed to
0.3. The antenna resistance is assumed to be 50 . The nor-
malized inductance is plotted in Fig. 9. We approximate its
value by a cubical polynomial of as shown in (32).
(32)
The tting parameters of when is equal to 10, 15 and
20 mF are listed in Tables III and IV.
The capacitance depicted by (27) is related to , ,
,and . Its relationships with and are plotted in Fig. 10.
The variable is set to be 0.3. A cubical polynomial approxi-
mationisprovidedtoestimate this capacitance, i.e.
(33)
TAN et al.: DESIGN OF EFFICIENT CLASS-E POWER AMPLIFIERS 2215
Fig. 9. The normalized inductance value versus for different
values. .and 0.5.
TAB L E I II
FITTING PARAMETERS TO COMPUTE ( , )
TAB L E I V
FITTING PARAMETERS TO COMPUTE ( , )
Fig. 10. The normalized capacitance value versus for different
values. .and 0.5.
The tting parameters of are listed in Tables V and VI.
The design procedure of the PA is summarized below.
TAB L E V
THE FITTING PARAMETERS TO COMPUTE ( , )
TAB L E V I
THE FITTING PARAMETERS TO COMPUTE ( , )
TAB L E V II
COMPONENT VALUES OF THE PA
Step 1) Choose the parameters of ,,and according
to the required targeted power and supply voltage.
Compute the inductance value accordingly.
Step 2) Choose the parameters of and to determine ,
and .
Step 3) Compute the output network of and .
Step 4) Ensure all the component values to be within the
practical range for on-chip integration. Otherwise go
back to Step 1 to adjust the design variables.
To illustrate the advantage of our proposed circuitry, we
present a design example of a 433-MHz Class-E PA for on-chip
integration with 3 dBm output power. Normally the low-power
PAs at such low frequency range require inductance values
larger than 40 nH, making it impractical to be implemented
on-chip due to huge area penalty and poorer quality factor
[27], [28]. Our proposed circuitry can potentially overcome
such issues and provide full chip solution even for such a
low operating frequency. The simplied design equations are
adoptedtodesignthisPA.Theontimedutycycle is chosen
to be 0.4, and the normalized frequency is selected to be 1.55
to reduce the output power level and the required inductance
values. The values of and arebothchosentobe0.3.The
supply voltage is set to be 0.5-V. From (31), it can be derived
that should be 13.2 mF such that the output power is 3
dBm with 0.5-V supply voltage. In order to use the polynomial
approximation formulae to compute and , we round
up to 15 mF resulting in an output power of 2.28 mW.
The values of , , and can be obtained from
the equations depicted in Table I. The values of and
are obtained from (32) and (33). The unnormalized component
values of the PA are summarized in Table VII. The simulated
PSS waveform of the switch voltage is plotted in Fig. 11. It can
be seen that the waveform satises the Class-E requirements
2216 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 59, NO. 10, OCTOBER 2012
Fig. 11. The simulated PSS voltage waveform of the switch. The time is nor-
malized to one period.
Fig. 12. Circuitry of the proposed 2.4-GHz PA.
well. The maximum inductance required is only about 10.2 nH
facilitating a fully on-chip solution.
V. C IRCUIT DESIGN AND MEASUREMENT RESULTS
In this section, we present the design and measurement results
of a 2.4-GHz PA with output power levels around 0 dBm. This
PA is implemented in 0.13 m CMOS technology. The die of
the PA is encapsulated in a Quad-Flat-No-leads (QFN) package.
The design parameters are chosen as: , ,
and . With this setting, the output power
is about 2.5 mW with 0.5-volt supply voltage if all the compo-
nents are ideal. This guarantees the output power to be close to 0
dBm by assuming an overall energy efciency of 50% when the
PA is implemented in CMOS. The circuitry of the PA and all the
component values are shown in Fig. 12. The switching transistor
is designed to have a large W/L ratio m m to
reduce the ‘on’ resistance. All the parasitic capacitances at the
drain terminal of are lumped into the parallel capacitance
. Two identical output pads are implemented at the output
node. Therefore, two bonding wires in parallel connect the PA’s
output to the package lead. This reduces the inuences of the
bonding wire inductance by half. The output node of the PA is
DC biased to ground potential without any need of DC block ca-
pacitor or other external components. The parasitic capacitances
of the output pads are lumped into . The gate capacitance of
the switching transistor is large for its relatively large aspect
ratio. If a CMOS inverter composed of both NFET and PFET is
used as the pre-driver, the inverter itself consumes high power
because of the large loading capacitance, hence degrading the
overall efciency. To reduce the power consumption, an induc-
tively biased NFET inverter composed of and is used as
the pre-driver. The inductance helps to tune out the gate ca-
pacitance of . The transistor is designed to have a small
aspect ratio m m to reduce the loading capacitance
of the previous stage. A small sized CMOS inverter is used to
drive the gate of . The RF tone is generated from an on-chip
VCO locked by a PLL. The pre-driver and the PA share the same
power supply with a nominal voltage of 0.5 V and the CMOS
inverter works with a supply voltage of 1.2 V. When the gate
driving voltage of is high, is pulled down to a low voltage
closed to 0. Hence, the transistor is turned off. When the
driving voltage of is low, is determined by the transient
waveform dened by and the total capacitances at the drain
node of .
The analytical formulae and waveforms derived in
Sections III and IV are based on ideal devices. When the
PAisimplementedinCMOSasdepictedinFig.12,simula-
tions are needed to characterize the circuit performance with
lossy elements and none ideal driving voltage of the switch. The
simulated PSS waveforms of and the channel current
of are plotted in Fig. 13(a) with a supply voltage of
0.5 V. Because has a large aspect ratio, it is approximately
turned off when is below the threshold voltage ,and
turned on when is larger than . The on duty cycle is
about 40%. The normalized power loss and
accumulated power loss are denedin(34)
and(35),andtheirwaveformsareplottedinFig.13(b).Itcan
be seen that there are two positive peaks in the waveform of
.Therst peak is due to the reason that
is turned on slightly before reaches zero. The second peak
is because of the nite ‘on’ resistance of . The energy
loss from the switching transistor accounts for 13.6% of
the total power of the entire PA (including the PA-stage and
pre-driver).
(34)
(35)
As the pre-driver is an indispensible stage, when we refer to
‘PA’ in the rest of the paper, both the pre-driver and PA stage are
included. The microphotograph of the PA is shown in Fig. 14.
Thecoreareais0.5mm and the total area with bonding PADs
is 1.0 mm . It should be noted that the input port of the PA
(composed of the PA-stage and the pre-driver) is mainly the
gate capacitance of instead of being matched to 50 .It
is driven by a small sized CMOS inverter as shown in Fig. 12.
The input power of the PA is mainly caused by the signal
feed through between the gate and drain nodes of through
the of the transistor. Due to the small size of ,is
quite small. Simulation results verify that the power gain of the
total PA is larger than 20 dB when V, implying the
differences between PE and PAE is less than 0.5%. Although
TAN et al.: DESIGN OF EFFICIENT CLASS-E POWER AMPLIFIERS 2217
Fig. 13. Simulated PSS waveforms in one complete cycle of (a) ,and
. (b) Normalized power loss and accumulated power loss of .
Fig. 14. The die photo of this work.
PAE is a good denition for stand-alone PAs with 50 input
impedance matching, overall PE is a better indication to char-
acterize integrated PA from the system point of view [20]. We
therefore use PE to evaluate the performance of the PA. Only
the component at the fundamental frequency is taken into ac-
count when computing the output power and efciency. The re-
sults are shown in Fig. 15. The input frequency is set to be 2.45
GHz. The measured power levels and efciencies are slightly
lower than the simulation prediction. This may be caused by the
process variation and imperfect matching and excessive losses
from the testing PCB. When the supply voltage varies from 0.45
Fig. 15. The simulated and measured results of the output power and overall
efciency of the PA (pre-driver and PA-stage) at frequency of 2.45 GHz.
Fig. 16. The simulated and measured results of the output power and ef-
ciency of the PA (pre-driver and PA-stage) under different frequencies. The
supply voltage is set to 0.5 V.
to 0.8 V, the measured output power level ranges from 1 to 3.7
mW, and the overall PE is from 53.5% to 55%. According to
simulation, the PA’s pre-driver consumes about 2% to 3% of the
total power. Therefore, it has no signicant impact on the overall
performance. Fig. 16 shows the simulated and measured results
under different frequencies. The measurement frequency is con-
ned to 2.1 2.5 GHz due to the limited tuning range of the
on-chip VCO. According to the measurement, in the 300 MHz
bandwidth from 2.2 to 2.5 GHz the PE variation is less than 2%
and the output power level changes less than 5%. This implies
the PA can operate in a wide frequency range. The measured
2nd and 3rd order harmonics are less than 25.5 and 41 dBc
respectively. Therefore, the energy losses at higher harmonics
are negligible.
We also compare our results with other reported 2.4-GHz
PAs. The core area of this PA is comparable with the existing
integrated low-power PAs reported in [17], [24], and [25]. The
Class-E PA in [17] is targeted at higher power levels ( 6dBm).
Smaller inductances can therefore be used, which reduces the
on-chip area. The ILO PA in [24] and the low-power Class-C
2218 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 59, NO. 10, OCTOBER 2012
TAB L E V III
PERFORMANCE COMPARISON WITH EXISTING PA
Unless stated, all designs are implemented in CMOS technology and use
on-chip spiral inductors.
SiGe technology .Bonding wire inductors .Estimated core area
Only the DC feed inductor is integrated, lacking the output lter.
Off-chip matching network/inductors required.
PA in [25] only require one inductor, resulting in smaller area.
However, their maximum PEs are worse as compared to the
Class-E PAs in [14]–[17] and this work. As pointed out earlier,
most reported Class-E PAs are not optimized for low-power ap-
plications, and the measurement results are usually limited to
10 dBm and above. However, due to the characteristics of these
Class-E PAs, the efciencies are expected to deteriorate further
with lower output power. As illustrated in Table VIII, the power
efciencies for [14]–[16] worsen when the output power levels
drop below 10 dBm. Although high PE of 52.5% is achieved
in [17], only the DC feed inductor is integrated on-chip, lacking
the output lter for harmonic suppression. Our structure exhibits
superior efciency at low output power levels without any need
of external components. The achieved peak PE of 55% is at
least 10% better than other types of low-power PAs reported
in [24]–[26].
VI. CONCLUSION
In this paper, we present a new circuitry of Class-E PA which
is optimized for delivering low output power level with high ef-
ciency and allows for fully integrated solution. Explicit design
equations are derived to characterize the PA. As a proof of con-
cept, a 2.4-GHz Class-E PA is implemented in 0.13 mCMOS
technology. Measurement results show the PA can deliver an
output power level from 3.2to5.7dBmwithmaximumef-
ciency of 55% including the auxiliary pre-drive stage.
APPENDIX A
DETAILED FUNCTION EXPRESSIONS
The required functions for deriving the output network of
and are given by (36)–(39). The function which denes the
output power of the PA is given by (40). The sub-functions of
,,and in (36)–(40) are provided
in Appendix B.
(36)
(37)
(38)
(39)
(40)
APPENDIX B
SUB-FUNCTIONS
TAN et al.: DESIGN OF EFFICIENT CLASS-E POWER AMPLIFIERS 2219
ACKNOWLEDGMENT
The authors would like to thank Dr. Yuan Gao from Singapore
Institute of Microelectronics for his help in chip assembly.
REFERENCES
[1] M. Acar, A. J. Annema, and B. Nauta, “Analytical design equations for
class-E power ampliers,” IEEE Trans. Circuits Syst. I, Reg. Papers,
vol. 54, no. 12, pp. 2706–2717, Dec. 2007.
[2] P. Reynaert, K. L. R. Mertens, and M. S. J. Steyaert, “A state-space
bhavioral model for CMOS class E power ampliers,” IEEE Trans.
Computer Aided Design Integr. Circuits Syst., vol. 22, no. 2, pp.
132–138, Feb. 2003.
[3] S. Sivakumar and A. Eroglu, “Analysis of class-E based RF power am-
pliers using harmonic modeling,” IEEE Trans. Circuits Syst. I, Reg.
Papers, vol. 57, no. 1, pp. 299–311, Jan. 2010.
[4] J. Y. Hasani and M. Kamarei, “Analysis and optimum design of class
E RF power amplier,” IEEETrans.CircuitsSyst.I,Reg.Papers, vol.
55, no. 6, pp. 1759–1768, Jul. 2008.
[5] F. H. Raab, “Idealized operation of the class E tuned power amplier,”
IEEE Trans. Circuits Syst., vol. CAS-24, no. 12, pp. 725–735, Dec.
1977.
[6] M. K. Kazimierczuk and K. Puczko, “Exact analysis of class E tuned
power amplier at any Q and switch duty cycle,” IEEE Trans. Circuits
Syst., vol. CAS-34, no. 2, pp. 149–159, Feb. 1987.
[7] M. Kazimierczuk, “Exact analysis of class E tuned power amplier
with only one inductor and one capacitor in load network,” IEEE J.
Solid-State Circuits, vol. SC-18, no. 2, pp. 214–221, Apr. 1983.
[8] T. Suetsugu and M. K. Kazimierczuk, “Maximum operating frequency
of class-E amplier at any duty ratio,” IEEE Trans. Circuits Syst. II,
Exp. Briefs, vol. 55, no. 8, pp. 768–770, Aug. 2008.
[9] O. Lee, K. H. An, and H. Kim et al.,“Anal
ysis and design of fully in-
tegrated high-power parallel-circuit class-E CMOS power ampliers,”
IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 57, no. 3, pp. 725–734,
Mar. 2010.
[10] M.Apostolidou,M.P.V.Heijden,D.M.W.Leenaerts,J.Sonsky,A.
Heringa, and I. Volokhine, “A 65 nm CMOS 30 dBm class-E RF power
amplier with 60% PAE and 40% PAE at 16 dB back-off,” IEEE J.
Solid-State Circuits, vol. 44, no. 55, pp. 1372–1379, May 2009.
[11] R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, “A 30.5 dBm 48%
PAE CMOS class-E PA with integrated balun for RF applications,”
IEEE J. Solid-State Circuits, vol. 43, no. 8, pp. 1755–1762, Aug. 2008.
[12] K. L. R. Mertens and M. S. J. Steyaert, “A 700-MHz 1-W fully differ-
ential CMOS class-E power amplier,” IEEE J. Solid-State Circuits,
vol. 37, no. 2, pp. 137–141, Feb. 2002.
[13] K. C. Tsai and P. R. Gray, “A 1.9-GHz, 1-W CMOS class-E power
amplier for wireless communications,” IEEE J. Solid-State Circuits,
vol. 34, no. 7, pp. 962–970, Jul. 1999.
[14] H. S. Oh, T. Song, E. Yoon, and C. K. Kim, “A power-efcient in-
jection-locked class-E power amplier for wireless sensor network,”
IEEE Microw. Wireless Components Lett., vol. 16, no. 4, pp. 173–175,
Apr. 2006.
[15] D. Y. C. Lie, J. Lopez, J. D. Popp, J. F. Rowland, G. Wang, G. Qin,
andZ.Ma,“Highlyefcient monolithic class E SiGe power amplier
design at 900 and 2400 MHz,” IEEETrans.CircuitsSyst.I,Reg.Pa-
pers, vol. 56, no. 7, pp. 1455–1465, Jul. 2009.
[16] D. Y. C. Lie, J. Lopez, and J. F. Rowland, “Highly efcient class E
SiGe power amplier design for wireless sensor network applications,”
in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting,Oct.2007,
pp. 160–163.
[17] M. J. Deen, M. M. El-Desouki, H. M. Jafari, and S. Asgaran, “Low-
power integrated CMOS RF transceiver circuits for short-range appli-
cations,” in Proc. 50th IEEE MWSCAS, Aug. 2007, pp. 1544–1549.
[18] S. C. Wong and C. K. Tse, “Design of symmetrical class E power am-
pliers for very low harmonic-content applications,” IEEE Trans. Cir-
cuits Syst. I, Reg. Papers, vol. 52, no. 8, pp. 1684–1690, Aug. 2005.
[19] V. Saari, P. Juurakko, J. Ryynanen, and K. Halonen, “Integrated 2.4
GHz class-E CMOS power amplier,” in Proc. IEEE RFIC Symp.,
Aug. 2005, pp. 645–648.
[20] P. Reynaert and M. Steyaert, RF Power Ampliers For Mobile Com-
munications. New York: Springer, 2006.
[21] G. Retz, H. Shanan, K. Mulvaney, S. O’Mahony, M. Chanca, P.
Crowley, C. Billon, K. Khan, and P. Quinlan, “A highly integrated
low-power 2.4 GHz transceiver using a direct-conversion diversity
receiver in 0.18 m CMOS for IEEE802.15.4 WPAN,” in Proc. of
IEEE ISSCC,Feb.2009.
[22] Y.S.Eo,H.J.Yu,S.S.Song,Y.Y.Ko,andJ.Y.Kim,“Afullyinte-
grated 2.4 GHz low IF CMOS transceiver for 802.15.4 ZigBee appli-
cations,” in Proc. IEEE ASSCC, Nov. 2007, pp. 164–167.
[23] M. J. Deen, R. Murji, A. Fakhr, N. Jafferali, and W. L. Ngan, “Low-
power CMOS integrated circuits for radio frequency applications,”IEE
Proc. Circuit Devices Syst., vol. 152, no. 5, pp. 502–508, Oct. 2005.
[24] M. M. El-Desouki, M. J. Deen, Y. M. Haddara, and O. Marinov, “A
fully integrated CMOS power amplier using superharmonic injection-
locking for short-range applications,” IEEE Sens. J., vol. 11, no. 9, pp.
2149–2158, Sep. 2011.
[25] B. W. Cook, A. Berny, A. Molnar, S. Lanzisera, and K. S. J. Pister,
“Low-power 2.4 GHz transceiver with passive RX front-end and
400-mV supply,” IEEE J. Solid-State Circuits, vol. 41, no. 12, pp.
2757–2766, Dec. 2006.
[26] X. Huang, P. Harpe, X. Wang, G. Dolmans, and H. Groot, “A 0 dBm
10 Mbps 2.4 GHz ultra-low power ASK/OOK transmitter with digital
pulse-shaping,” in Proc. IEEE Radio Frequency Integrated Circuits
Symp., Apr. 2010, pp. 263–266.
[27] T. H. Teo, X. Qian, and P. K. Gopalakrishnan et al., “A 700-
wireless sensor node SoC for continuous real-time health monitoring,”
IEEE J. Solid-State Circuits,vol. 45, no. 11, pp. 2292–2299,Nov. 2010.
[28] M. K. Raja and Y. P. Xu, “A 50 pJ/bit OOK transmitter with adaptable
data rate,” in Proc. IEEE ASSCC, Nov. 2008, pp. 341–344.
Jun Tan (S’06) received the B.Sc. and M.Sc. degrees
in electrical engineering from Fudan University,
Shanghai, China, in 2001 and 2004, respectively. He
has been with the National University of Singapore
since 2006, where he is currently working towards
the Ph.D. degree.
He was with Intel Product, Shanghai, China, in
2004. He worked at Agilent Technology, Shanghai,
China from 2005 to 2006. His research interests
include analog and RF circuit design for low-power
wireless communications.
Chun-Huat Heng (S’96–M’04) received the B.Eng.
and M.Eng. degrees from the National University of
Singapore in 1996 and 1999, respectively, and the
Ph.D. degree from the University of Illinois at Ur-
bana-Champaign, in 2003.
He has been working on CMOS integrated circuits
involving synthesizer, delay-locked loop, and trans-
ceiver circuits. From 2001 to 2004, he was with Wire-
less Interface Technologies, which was later acquired
by Chrontel. Since 2004, he has been with the Na-
tional University of Singapore. He has received NUS
Annual Teaching Excellence Award in 2008.
Dr. Heng is currently serving as an Associate Editor for IEEE TRANSACTION
ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, and a Technical Program
Committee member for Asian Solid-State Circuits Conference.
Yo n g L i an (M’90–SM’99–F’09) received the B.Sc
degree from the College of Economics and Manage-
ment of Shanghai Jiao Tong University in 1984, and
the Ph.D. degree from the Department of Electrical
Engineering, National University of Singapore, in
1994.
He worked in industry for 9 years and joined the
National University of Singapore in 1996, where he
is currently the Provost’s Chair Professor and Area
Director for IC and Embedded Systems in the Depart-
ment of Electrical and Computer Engineering. His re-
search interests include biomedical circuits and systems and signal processing.
He is author or coauthor of over 160 scientic publications in peer reviewed
journals, conference proceedings.
2220 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 59, NO. 10, OCTOBER 2012
Dr. Lian is the recipient of the 1996 IEEE CAS Society’s Guillemin–Cauer
Award for the best paper published in the IEEE TRANSACTION ON CIRCUITS
AND SYSTEMS—II: EXPRESS BRIEFS, the 2008 Multimedia Communications
Best Paper Award from the IEEE Communications Society for the paper
published in the IEEE TRANSACTIONS ON MULTIMEDIA, winner of the 47th
DAC/ISSCC Student Design Contest (as a Ph.D. Advisor), the Best Student
Paper Award in the ICME’07 (as a M.Eng. Advisor), 2011 IES Prestigious
Engineering Achievement Award, and many other awards. He teaches VLSI
Digital Circuit Design, Integrated Digital Design, and Emerging Technologies
in Electrical Engineering. He received 2009 and 2010 University Annual
Teaching Excellent Awards and many other teaching awards. Dr. Lian is the
Founder of ClearBridge VitalSigns Pte. Ltd, a start-up for wireless wearable
biomedical devices. Dr. Lian is the Editor-in-Chief of the IEEE TRANSACTION
ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS (TCAS-II), a Steering
Committee Member of the IEEE TRANSACTIONS ON BIOMEDICAL CIRCUIT S
AND SYSTEMS (TBioCAS), the Chair of DSP Technical Committee of the IEEE
Circuits and Systems (CAS) Society, and a Member of the IEEE Medal for In-
novations in Healthcare Technology Committee. He served as Associate Editors
for IEEE TCAS-I, TCAS-II, TBioCAS, and journal of Circuits Systems Signal
Processing (CSSP) in the past 10 years, and was the Guest Editor for 7 Special
Issues in TCAS-I, TBioCAS, and CSSP. He was the Vice President for Asia
Pacic Region of the IEEE CAS Society from 2007 to 2008, AdComm Member
of the IEEE Biometrics Council (2008–2009), CAS Society Representative
to the BioTechnology Council (2007–2009); Chair of the BioCAS Technical
Committee of the IEEE CAS Society (2007–2009), Member of the Prize Paper
Award Subcommittee of the IEEE CAS Society (2007 and 2009), Member of
the Chapter of the Year Award Subcommittee of the IEEE CAS Society (2007),
Member of the Regional Activities and Membership Development Division of
the IEEE CAS Society (2007), the Distinguished Lecturer of the IEEE CAS
Society (2004–2005), Member of Chapter and Regional Activity Committee
of the IEEE Education Society. Dr. Lian is the Founder of the International
Conference on Green Circuits and Systems (ICGCS), Asia Pacic Conference
on Postgraduate Research in Microelectronics and Electronics (PrimeAsia),
and IEEE Biomedical Circuits and Systems Conference (BioCAS).
... As reported in previous works [7], [33], [49][50][51][52][53][54][55][56], amplifiers/rectifiers can be added in a WPT topology to improve efficiency on the transmitter side of the WPT system and thus improving overall efficiency. Chen [30], reported that switching mode power amplifiers can be used in a WPT setup as it converts DC to AC and acts as an inverter. ...
... Chen [30], reported that switching mode power amplifiers can be used in a WPT setup as it converts DC to AC and acts as an inverter. It is reported that most Class E and Class DE switching mode power amplifiers were used as they ideally have 100% efficiency [7], [33], [49][50][51][52][53][54][55][56]. However, the Class DE power amplifier used two transistors with the push-pull method that produces a high gate drive where it is hard to control the dead time. ...
Article
Full-text available
This paper describes the analysis of the wireless power transmission including recent progress in non-radiative wireless power transmission (WPT) and the improvement methods. Generally, the WPT transmitter side consists of a DC supply voltage source, inverter/power amplifier, transmitter impedance matching device (IMD), source resonator and primary coil. The WPT receiver meanwhile consists of the secondary coil, device resonator, receiver IMD, rectifier and load. In order to achieve an efficient WPT, the WPT transmitter must transmit energy with minimum loss at the receiver side. This setup can be achieved by employing the power amplifier (PA). In this paper, the power amplifier in wireless power transmission for portable devices was designed. A Class E power amplifier was proposed and designed to improve the WPT transmitter side. The effects of zero voltage and zero derivative voltage switching on PA with optimization method was also discussed
... The direct modulation transmitter consists of a TX Switch, a power amplifier, pre-drivers (Pre-PA), modulators in the pre-PA and a FBAR based oscillator as shown in Fig. 1, and supports OOK and BPSK modulation schemes. A high-Q FBAR RF resonator, which oscillates directly at the carrier frequency eliminates the need to use a power hungry Frequency Synthesizer that uses a crystal for precise carrier frequency generation [3]. Additionally, a capacitor DAC was used in the FBAR oscillator to compensate frequency shifts due to PVT and to damp any parasitic oscillation. ...
... A literature survey of the ULP amplifiers show that previous works often used push-pull class-AB [2], class-E [3] or class-F [4] power amplifiers. The push-pull PA was reported to be the most efficient among these topologies and uses only one inductor for its matching network, hence it also has the minimum area among mentioned types of PAs. ...
Article
Full-text available
This paper presents a highly integrated ultra-low-power Transmitter (TX) supplied from a high efficiency Switched Capacitor DC-DC (SC DC-DC) converter targeting the IEEE 802.15.6 standard for Wireless Body Area Network (WBAN) applications. The transmitter is supplied from the SC DC-DC for a high global efficiency when the chip is supplied from a regular 1.2 V or higher supply. The transmitter generates the RF signal using an FBAR oscillator, which is integrated within the package. The chip is fabricated using standard 65nm CMOS process from UMC. The TX achieves 34% global PA efficiency (42% drain efficiency) and 21% total chip efficiency (26% Radio only) at -9.5 dBm output power and consumes 538 uW.
... Here L1 and L0 are used as DC Feed inductors. L2, C2 and C3 are used for harmonic terminations [4] that will waveshape the drain current and drain voltage of the transistor M1. The transistor M2 is used as a pre-driver. ...
Article
Full-text available
The world of Wireless Technology has been improving consistently due to its high speed and reliability. Some of the demands that need to be fulfilled include larger network capacity, improved data rates and so on. This paper focuses on the design and simulation of the Transmitter, which is a key component in an RF Transceiver Module. It is built by cascading an Up Conversion Mixer, a Bandpass Filter and a Power Amplifier as its most fundamental units. The Cadence Virtuoso Tool was used to construct this Transmitter block in 180nm node technology. The IF signal to the Mixer is 100 MHz and the LO signal is 2.3GHz. The 2.4GHz amplified RF output is taken from the Power Amplifier. A 1dB compression point of -25.91 dBm and an IIP3 of 10.14 dBm is observed for the proposed design. Future work involves testing its integrity with an RF Receiver module that has appropriate modulation schemes in place and converting it into a physical layout-based IC.
... Here L1 and L0 are used as DC Feed inductors. L2, C2 and C3 are used for harmonic terminations [4] that will waveshape the drain current and drain voltage of the transistor M1. The transistor M2 is used as a pre-driver. ...
Article
Full-text available
The world of Wireless Technology has been improving consistently due to its high speed and reliability. Some of the demands that need to be fulfilled include larger network capacity, improved data rates and so on. This paper focuses on the design and simulation of the Transmitter, which is a key component in an RF Transceiver Module. It is built by cascading an Up Conversion Mixer, a Bandpass Filter and a Power Amplifier as its most fundamental units. The Cadence Virtuoso Tool was used to construct this Transmitter block in 180nm node technology. The IF signal to the Mixer is 100 MHz and the LO signal is 2.3GHz. The 2.4GHz amplified RF output is taken from the Power Amplifier. A 1dB compression point of -25.91 dBm and an IIP3 of 10.14 dBm is observed for the proposed design. Future work involves testing its integrity with an RF Receiver module that has appropriate modulation schemes in place and converting it into a physical layout-based IC.
... The hypothesis of this decrease is that it could be due to the skin effect which results in a higher series resistance at higher frequencies as well as the parasitic drain capacitance but investigation are still ongoing. The following Figure-of-Merit (FoM) [21] is used to compare the performance of the designed chip with state-of-the-art CMOS switch-mode PAs (SMPAs) [21][22][23][24][25][26][27][28]: Due to its high efficiency (PAE = 70%) as shown in Figure 8 and compact size (die area = 0.21 mm 2 ) including the I/O pads, the proposed design methodology implemented on this work, has a FoM of 735, which is the highest among all designs in comparison as shown in Table 2. ...
Article
Full-text available
This paper proposes a new technique and design methodology on a transformer-based Class-E complementary metal-oxide-semiconductor (CMOS) power amplifier (PA) with only one transformer and two capacitors in the load network. An analysis of this amplifier is presented together with an accurate and simple design procedure. The experimental results are in good agreement with the theoretical analysis. The following performance parameters are determined for optimum operation: The current and voltage waveform, the peak value of drain current and drain-to-source voltage, the output power, the efficiency and the component values of the load network are determined to be essential for optimum operation. The measured drain efficiency (DE) and power-added efficiency (PAE) is over 70% with 10-dBm output power at 2.4 GHz, using a 65 nm CMOS process technology.
Article
Full-text available
In this paper, a Class E Power Amplifier (Class-E PA) suitable for Wireless Body Area Networks (WBAN) is proposed. A commercially available RF3931 GaN (gallium nitride) high electron mobility transistor deviceis used in the proposed design, together with an active harmonic load-pull analysis of the class E mode. The proposed PA utilizes a band pass filter matching network and operates in the frequency range of 6.78MHz to 2.2GHz. The designed PA is fabricated in FR4 substrate and the measurement results are provided. The designed PA provides 78.5% of maximum power efficiency with a fractional bandwidth of 40 while achieving the gain of 10.8-to-14.8 dB. The maximum output power achieved is 42.9 dBw.
Article
A novel class-E power amplifier (PA) using a current-injection (CI) technique is presented in this letter. An auxiliary current source, which injects the current into the load during each turn-off period of switching transistors, is introduced into the conventional class-E PA. Without the need of impedance transforming or increasing of the supply voltage, the proposed PA provides a new method to increase the output power. The proposed circuit is fabricated in a Taiwan Semiconductor Manufacturing Company's (TSMC's) 65-nm low power (LP) CMOS process. Measurement results show that the output power of the injected circuit reaches up to 14.12 dBm with a drain efficiency of 41% at 1.8 GHz. The output power improves more than 3 dB compared to the conventional class-E PA without CI.
Article
In this paper, a fully integrated, differential, common gate class-E power amplifier with capacitive cross-coupling is proposed for wireless applications at 2.4 GHz. Capacitive cross-coupled (CCC) common gate structure enhances the power added efficiency (PAE) and reduces the total harmonic distortion (THD) of the circuit. The power amplifier, implemented in UMC 180 nm technology, is designed without series harmonic rejection tanks and uses dc feed inductor. Post-layout simulations with corner analysis are performed in Cadence Virtuoso tool. The power amplifier achieves a maximum PAE of 52%, output power of 18 dBm and third harmonic distortion of −25 dBm for 1.8 V supply.
Article
Degradation in gain and efficiency of on-chip antennas limit the communication range of RF transmitters integrated with on-chip antennas below 10 GHz to few centimeters. In this paper, a novel strategy of co-design of fully integrated differential class-E power amplifier and on-chip loop antenna at 2.4 GHz is proposed to increase communication range and save chip area. In the co-design strategy, inductor used for harmonic rejection and matching in the power amplifier is replaced with a parallel capacitance network for harmonic rejection and a modified two turn on-chip loop antenna is used for matching load impedance of power amplifier. From the post-layout simulation results using Cadence Virtuoso, power amplifier has maximum power added efficiency(PAE) of 50.7%, and output power of 17 dBm. On-chip antenna, simulated in Advanced Design System(ADS) has a gain of −19.9 dBi and efficiency of 0.48%. The transmitter designed in UMC 180-nm technology has a higher computed communication range of 1.5 m and is suitable for biotelemetry applications such as patient monitoring.
Book
RF Power Amplifiers for Mobile Communications fits in the quest for fully integrated CMOS transceivers. The book tackles both high efficiency and high linearity PA design in low-voltage CMOS, and has a strong emphasis on theory, design and implementation. The book is conceived as a design guide for those actively involved in the design of CMOS wireless transceivers. RF Power Amplifiers for Mobile Communications starts from the basic theory of power amplification from the viewpoint of CMOS integration. The design of switching RF power amplifiers in CMOS is explored and CMOS PA design at low supply voltage using parallel amplification is discussed. Combining both efficiency and linearity is one of the major issues in CMOS PA design for wireless and mobile communications and is subsequently tackled. Different linearization techniques and approaches are discussed and polar modulation is clarified in greater detail. Finally, two CMOS PA implementations are thoroughly covered. RF Power Amplifiers for Mobile Communications offers the reader an intuitive insight in Power Amplification as well as the necessary mathematical background. The book is essential reading for RF design engineers and researchers in the field and is also suitable as a text book for an advanced course on the subject.
Article
The equations governing the operation of an idealized class E RF power amplifier have been derived. These equations were first used to determine the circuit elements required to obtain an efficiency of 100 percent, and then used to determine the optimum set of parameters for 100-percent efficient operation. The harmonic structure of the collector waveform was then determined, and analogies for related circuit configurations were presented. A brief comparison of the optimum class E amplifier to other amplifiers is given.
Article
A 700-MHz fully differential class-E CMOS power amplifier for wireless applications has been built toward maximum efficiency. The prototype can deliver 1 W of output power in a 50-Ω output impedance. The maximum power-added efficiency (PAE) is measured to be 62%. The obtained efficiency and output power is compared with the class-E amplifiers theory
Article
This paper discusses our efforts in designing different low-power RF transceiver blocks, starting with the LNA and power amplifier (PA). The paper discusses the effect of four different input matching methodologies on the gain of narrow-band LNAs. Measurement results of two LNAs fabricated in a 0.18 mum CMOS technology are also presented. Two ultra-wideband (UWB) LNA designs that aim for low- voltage and low-power operation are also discussed in this paper. The UWB LNAs consume a power of 5.8 mW from a 0.8 V supply voltage, while achieving a maximum gain of 12.5 dB and an input matching better than -10 dB from 2-10 GHz with a NF of 3.5 dB. A fully integrated, 2.4 GHz class-E PA, with a class-F driver stage is also discussed in this work, demonstrating the feasibility of using CMOS class-E PAs for low-transmit power applications. The circuit was fabricated in a standard 0.18 mum CMOS technology with a maximum drain efficiency of 53%. When operating from a 1.2 V supply, the PA delivers an output power of 14.5 mW with a power-added efficiency (PAE) of 51%. The supply voltage can go down to 0.6 V with an output power of 3.5 mW and a PAE of 43%. Finally, the paper also discusses a simple transmitter and receiver front-end, in addition to a single-block simplified, low- power PLL transmitter design.
Chapter
The typical circuit-level challenges for the integration of radio frequency (RF) power amplifiers in a complementary metal-oxide-semiconductor (CMOS) technology are the low supply voltage, the need for a high peak and average efficiency, the power control dynamic range requirements, and the high linearity requirements. Two important mechanisms cause the output power of a power amplifier to be less than its peak value: power control and amplitude modulation. These two mechanisms determine the dynamic range and linearity requirements are discussed in this chapter. The chapter shows that the average efficiency is as important as the efficiency at peak output power. It focuses on polar modulation as a means to linearize a nonlinear switching RF CMOS power amplifier. The chapter describes the main causes of the nonlinearity that occurs in polar-modulated amplifiers. It also describes the design and implementation of a polar-modulated power amplifier (PA) for GSM-EDGE. CMOS analog integrated circuits; GSM; mobile communication; power amplifiers; radio frequency
Article
A design methodology for watt-level, fully integrated CMOS power amplifiers (PAs) is presented. It is based on the analysis of the operation and power loss mechanism of class-E PAs, which includes the effects of a finite dc-feed inductance and an impedance matching transformer. Using the proposed approach, a class-E PA with a 2 $times$ 1:2 step-up on-chip transformer was implemented in a 0.18- $mu{hbox{m}}$ CMOS technology. With a 3.3 V supply, the fully integrated PA achieves an output power of 2 W and a power-added efficiency of 31% at 1.8 GHz.
Conference Paper
The IC presented in this paper is a highly integrated low-power RF transceiver for wireless sensor networks (WSN) compliant with the IEEE 802.15.4 2.4GHz WPAN standard. It contains a radio controller with sleep timer and can perform higher-level MAC functions such as beacon detection and network timing synchronisation autonomously, thereby enabling significant power savings in the overall system. The primary design goal for the receive path is to achieve excellent channel selectivity and dynamic range combined with good sensitivity at very low power consumption, all of which are important parameters for the reliable operation of WSN in the harsh 2.4GHz ISM band. The receiver uses a direct-conversion architecture and offers up to 20dB improved interference rejection in the adjacent channels compared to recently published WPAN transceivers based on the low-IF architecture. Further emphasizing WSN reliability, the receiver supports switched antenna diversity to mitigate multipath fading. Implemented in a 1P6M 0.18mum RFCMOS process, the IC occupies a die area of less than 5.9mmA It operates with a supply voltage from 1.8V to 3.6V, draws 16.8mA in receive mode and 18mA when transmitting at 3dBm.
Article
A 30 dBm single-ended class-E RF power amplifier (PA) is fabricated in a baseline 65 nm CMOS technology. The PA is constructed as a cascode stage formed by a standard thin-oxide device and a dedicated novel high voltage extended-drain thick-oxide device. Both devices are implemented without using additional masks or processing steps. The proposed PA uses an innovative self-biasing technique to ensure high power-added efficiency (PAE) at both high output power (P<sub>out</sub>) and power back-off levels. At 2 GHz, the PA achieves a PAE of 60% at a Pout of 30 dBm and a PAE of 40% at 16 dB back-off. Stress tests indicate the reliability of both the novel high voltage device and the design.
Article
An analysis of the Class-E power amplifier is given using harmonic modeling that facilitates its characterization for a wide load-space regime expected in applications such as RF plasma generation for semiconductor manufacturing. Using a hybrid matrix-framework made up of the dominant harmonics of the circuit variables aided by the time-domain boundary conditions of the power switch voltage waveform, a quasi-linear algorithm is developed to accurately determine the voltage and the current levels expected on all components of the power amplifier for arbitrary loading and operating conditions. The application of the algorithm for design optimization is discussed, and its extension to phase-controlled Class-E power amplifier pairs is described.