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Huiting WuAustralian National University | ANU · Research School of Engineering
Huiting Wu
Doctor of Engineering
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7
Publications
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Introduction
Spectral photoluminescence in crystalline silicon solar cells
Skills and Expertise
Publications
Publications (7)
Micro-photoluminescence is utilised in this work to study the shallow boron diffusions that occur underneath p + polysilicon passivating contacts. Regions with high boron concentrations emit a photoluminescence peak at a higher wavelength compared to the substrate crystalline silicon due to band-gap narrowing. We demonstrate the presence of this pe...
Micro-photoluminescence spectroscopy is applied in this work to characterise the shallow phosphorus diffusions occurring below poly-silicon passivating contacts for silicon solar cells, courtesy of the bandgap narrowing effect in the heavily-doped region. We present the photoluminescence spectra from samples of various diffusion profiles, achieved...
We examine correlations between the recombination lifetime and hydrogen content of hydrogenated amorphous silicon films (a-Si:H) and the surface passivation afforded by such films when deposited on crystalline silicon wafers, during annealing at 350–500 °C. Our results show that, as the annealing duration increases, both the a-Si:H recombination li...
We develop a photoluminescence-based technique to determine dopant profiles of localized boron-diffused regions in silicon wafers and solar cell precursors employing two excitation wavelengths. The technique utilizes a strong dependence of room-temperature photoluminescence spectra on dopant profiles of diffused layers, courtesy of bandgap narrowin...
We investigated ring defects induced by a two-step anneal in n-type Czochralski-grown silicon wafers using a combination of high spatial resolution Fourier Transform Infrared Spectroscopy (FTIR), micro-photoluminescence (PL) mapping, and micro-Raman mapping. Through FTIR measurements, we show the inhomogeneous loss in interstitial oxygen with a pos...
When measured at low temperature (79 K), the photoluminescence (PL) spectra from silicon wafers containing a diffused heavily doped layer exhibit a second peak due to band gap narrowing in the diffused region. This work aims to decompose this peak into components arising from the various doping concentrations within the diffused layer. Whilst the p...