Gfa Malik

University of Kashmir · Department of Electronics & Instrumentation Technology

In this article, we present that a bandgap can be generated in silicene nanoribbons (SiNRs) by codecorating them with lithium and chlorine atoms on two sides. Besides, using the semiempirical calculations, the performance of the functionalized SiNR as high-performance (HP) channel material for field effect transistor (FET) has been investigated. Ba...

In this study, an InAs channel-based triple gate spin-field effect transistor (FET) model is proposed. The proposed triple-gate spin-FET offers a high density of integration, consumes low power and offers very high switching speed. By incorporating the suitable parameters like channel length, spin diffusion length, channel resistance and junction p...

In this paper, a novel double gate Spin-Field Effect Transistor (DG spin-FET) with indium phosphide (InP) as channel material is evaluated. The proposed spin-FET device is well suited for CMOS technology, as both n and p-type devices can be formed by using parallel and anti-parallel combinations of spin-FET respectively. The proposed device feature...

In this article, we report that the photoconductive gain of the photodetector can be appreciably increased by forming a heterojunction between silicene and MoS₂. To the best of the authors' knowledge, it is for the first time that the silicene/MoS₂ heterojunction has been investigated as a high-performance device for photodetector applications. Den...

In this paper, properties of spin transport for MTJs (magnetic tunnel junction) consisting of CrO2 Half Metallic Ferromagnetic (HMF) electrodes with out of plane silicene sheet as scattering region are analyzed. The transport phenomena in the proposed structure are purely tunneling due to the absence of transmission states near the Fermi level. Thi...

In the last two decades, a lot of research has been done for finding the best physical implementation of a quantum computer. Due to integrablity with classical computation hardware and versatility in creating qubits and quantum gates, silicon quantum dot-based systems are one of the most promising systems. In this paper, we have modelled a universa...

Low power consumption makes spin caloritronic devices promising for a broad range of devices and circuits. A two probe device is formed based on a lateral heterostructure of zigzag silicene nanoribbons (ZSiNRs). The heterostructure comprises two ZSiNRs; one with single hydrogen edge termination and the other with double hydrogen edge termination. W...

In this work, we report a novel method to achieve half-metallicity in silicene. Silicene is functionalized with Br-atoms to achieve half-metallicity. Both full-Br-silicene and half-Br-silicene are considered. Half-Br-silicene shows a half-metallic character, whereas full-Br-silicene has a semiconducting nature. Besides the half-metallic nature, hal...

Standardized fractional-order capacitor (FOC) fabrication for application in the integrated circuit industry has always been hampered due to limitations inherent to the device. These limitations are due to the structure of the device, the nature of the dielectric, the range of the obtainable fractional order α and constant phase (CP) zone, lifetime...

In this paper, the spin-transport properties of Gallium Nitride/Indium Phosphide/Gallium Nitride (GaN/InP/GaN) all semiconductor magnetic tunnel junction (MTJ) has been investigated. To induce ferromagnetic properties in the electrodes made of GaN, the electrodes are doped with Manganese (Mn). The central region is made of InP, which is a large ban...

In this article, for the first time, we propose a silicene-based spin filter having a TFET configuration. The device portrays a voltage-dependent spin polarization and achieves a ``spin polarization'' as high as 98% at a minimal ``operating voltage'' (0.35 V). The operation of the device is based on the ``spin-polarized edge states'' in a silicene...

With the curiosity to account for transition metal-based oxide double perovskites (A2BB΄O6) as better-performing semiconducting materials for light-driven devices and dielectrics, the study examined the optical properties of La2NiMnO6 doped substitutionally at A sites by Ca and Yb. The study is performed by making use of Density Functional Theory w...

The high mobility and velocity of the carriers make germanene and silicene promising materials for future electronic devices like field-effect transistors. The lack of bandgap in these materials has been a prominent hurdle in the development of electronic devices based on them. This work presents a novel method of bandgap creation in zigzag germane...

2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and la...

During the last decade, there has been considerable interest of researchers towards the use of two-dimensional (2D) materials for the electronic device implementations. The main driving force is the improved performance offered by these 2D materials for electronic device operation in nano-scale regime. Among these 2D material, silicene (the 2D of s...

During the last decade, there has been considerable interest of researchers towards the use of two-dimensional (2D) materials for the electronic device implementations. The main driving force is the improved performance offered by these 2D materials for electronic device operation in nano-scale regime. Among these 2D material, silicene (the 2D of s...

Among the various devices being researched as possible alternative for conventional scaled down transistor, the spin-FET (Datta-Das transistor) held some early promise. Various research groups have proposed the complementary spin-FETs viz., parallel and anti-parallel spin-FETs, later designed some basic and higher order logic circuits using them, a...

In this work, performance analysis of functionalized silicene nanoribbons- (SiNRs) based photodetector is evaluated using Atomistix Tool kit software. The functionalized SiNRs were obtained by co-decorating them with lithium atoms on one side and chlorine atoms on the other side. The performance of photodetector is analyzed in terms of spectral res...

In this paper, hydrogenation is used for the generation of band gap in silicene and the hydrogenated silicene is then studied for its spintronic applications. Upon hydrogenation, silicene transforms into a wide band gap material with a band gap of 3.32 eV. Parameters like magneto-resistance and spin-filtering efficiency of magnetic tunnel junction...

In this paper, novel gate all-around spin field effect transistors (GAA Spin-FETs) with three different channel materials are proposed and their transport properties are presented. The three channel materials used are Indium Arsenide (InAs), Indium Phosphide (InP) and Aluminum Antimonide (AlSb). Based on the type of semiconducting channel, the resu...

In this paper, novel gate all-around spin field effect transistors (GAA Spin-FETs) with three different channel materials are proposed and their transport properties are presented. The three channel materials used are Indium Arsenide (InAs), Indium Phosphide (InP) and Aluminum Antimonide (AlSb). Based on the type of semiconducting channel, the resu...