In which region should my MOSFET operate to PWM control?

Many journals uses impact factors whereas some are using cite score. Is there really a big differences between them or not? Some journals uses SJR,SNIP score, what is the meaning of these?

Hello,

DC link voltage: 370

max Mosfet current: 6A

output voltage: 230 V

2Kw

I am using SiC MOSFETs for full bridge inverter. and i am trying to use bootstrap power supply instead of isolated supply for highside and lowside switches.

I want to implement -5 V to turn mosfet off for high and low side. I know how to design a bootstrap for highside but in that case turn off voltage is zero.

can you refer or guide me how i can implement -5 turn off voltage for Sic MOSFETs.

Any reference designs?

I am trying to understand the physics of MOSFETs. Mostly related to wide band gap materials like GaN, GaO, AlGaN. Alongside transistors I am also interested to LEDs. So learning the basics first would really help me. I would be grateful if I could get some very basic resources or materials regarding these topics. Thanks. 

I am using IR2110 driver circuit to drive the 100 kHz H-bridge IRF640 MOSFET switches. But as the input voltage to the H-bridge increases (about 25 V) the pulses gets distorted. I have attached the driver circuit. Please help me to solve the problem.

If a switch, say SiC or Si Mosfet is to be used in a converter where they are common to two independent operating modes of the converter, where it is once in a mode to carry higher current and at other times it will operate in lighter load in another operating mode.

Control in both modes is different.

So, here I need these common switches to be of the same voltage 600 V, higher current carrying mode current rating = 100 A and lower current carrying mode required current-carrying capacity= 15 A. So I have to use a switch of 600V, 100 A, but it will be underutilization in the low current-carrying mode. So, the Gate drive voltage would be the same, and on-state resistance will also not get affected, expecting the losses would not get differ from the case when a low rated switch of 15 A is used.

I want to know what are the compromisation that will be faced in the lighter load operation of the higher-rated switches used. Is there any effect of higher parasitic values? I want to collect some points to understand it better.

What are the effects of Rin and Rgs on the circuit performance?

Does anyone know of a passive RFID chip that has a hysteretic switch between a rectifier and an oscillator?

Can MOSFETs be used without shorting the source to the substrate. More specifically can an enhancement type n-MOSFET be used as a switch between the source and drain with the substrate and the gate acting as separate channel formation terminals?