Question
Asked 3rd Nov, 2022
How to add breakdown model in the project Design of 4H_SiC RESURF power MOSFET?
I need to add the Avalanche Hatakeyama breakdown model in the Sdevice command file. Can anyone help me with the code
Similar questions and discussions
How can solve the error log or str file does not exist in silvaco ? i have added my code file below ?
i have added the file below please answer #14nmfinfet
# Material Definitions
material material=SiGe EG300=1.12 mun=2360
mesh space.mult=1.0
#x meshing
x.mesh loc=0.000 spac=0.001
x.mesh loc=0.002 spac=0.001
x.mesh loc=0.008 spac=0.001
x.mesh loc=0.022 spac=0.001
x.mesh loc=0.028 spac=0.001
x.mesh loc=0.03 spac=0.001
#y meshing
y.mesh loc=0.000 spac=0.001
y.mesh loc=0.003 spac=0.001
y.mesh loc=0.005 spac=0.001
y.mesh loc=0.025 spac=0.001
y.mesh loc=0.045 spac=0.001
y.mesh loc=0.075 spac=0.001
#region
#source
region num=1 material=SiGe x.min=0.002 x.max=0.008 y.min=0.005 y.max=0.025
#channel
region num=2 material=SiGe x.min=0.008 x.max=0.022 y.min=0.005 y.max=0.025
#drain
region num=3 material=SiGe x.min=0.022 x.max=0.03 y.min=0.005 y.max=0.025
#source contact
region num=4 material=aluminium x.min=0.00 x.max=0.002 y.min=0.005 y.max=0.025
#drain contact
region num=5 material=aluminium x.min=0.028 x.max=0.03 y.min=0.005 y.max=0.025
#oxide
region num=6 material=HfO2 x.min=0.008 x.max=0.022 y.min=0.003 y.max=0.005
#gate
region num=7 material=aluminium x.min=0.008 x.max=0.022 y.min=0.000 y.max=0.003
#buried oxide
region num=8 material=Al2O3 x.min=0.000 x.max=0.03 y.min=0.025 y.max=0.045
#substrate
region num=9 material=si x.min=0.000 x.max=0.03 y.min=0.045 y.max=0.07
#substrate contact
region num=10 material=si x.min=0.000 x.max=0.03 y.min=0.07 y.max=0.075
#electrode
electrode name=gate region=7
electrode name=source region=4
electrode name=drain region=5
electrode name=substrate region=10
# doping
doping region=2 p.type conc=1e16 uniform
doping region=1 n.type conc=1e20 uniform
doping region=3 n.type conc=1e20 uniform
doping region=9 p.type conc=1e15 uniform
#materials
material material=silicon EG300=1.12 mun=2360
#contact_specification
contact name=gate workfunction=4.45
contact name=source neutral
contact name=drain neutral
contact name=substrate neutral
#models
material material=silicon EG300=1.12 mun=1100
models conmob auger bgn fldmob srh print
# Method
method newton trap
# Output
output val.band con.band qfn qfp e.field j.electron j.hole j.conduction j.total ex.field ey.field flowline e.mobility h.mobility e.temp h.temp j.disp
# Solving Steps
solve init
solve prev
solve vdrain=0.05
solve vgate=-0.8 vstep=0.04 vfinal=0.8 name=gate1
solve vgate=-0.8 vstep=0.04 vfinal=0.8 name=gate2
# Saving and Visualization
log outf=aa.log master
save outf=aa.str
tonyplot aa.str
tonyplot aa.log
# Quit
quit
Why threshold voltage is negative in this code? Please check in my code ?
go atlas
mesh space.mult=1.0
#
x.mesh loc=0.00 spac=0.01
x.mesh loc=0.20 spac=0.0001
x.mesh loc=0.25 spac=0.01
x.mesh loc=0.30 spac=0.0001
x.mesh loc=0.40 spac=0.01
x.mesh loc=0.5 spac=0.01
#
y.mesh loc=0.00 spac=0.001
y.mesh loc=0.002 spac=0.001
y.mesh loc=0.005 spac=0.001
y.mesh loc=0.035 spac=0.01
y.mesh loc=0.065 spac=0.15
#
region num=1 material= Air x.min=0 y.min=0
region num=2 material= SiO2 x.min=0.2 x.max=0.3 y.min = 0.002 y.max=0.005
region num=3 material= silicon x.min=0 x.max=0.2 y.min =0.005 y.max=0.035
region num=4 material= silicon x.min=0.2 x.max=0.3 y.min =0.005 y.max=0.035
region num=5 material= silicon x.min=0.3 x.max=0.5 y.min =0.005 y.max=0.035
region num=6 material= silicon x.min=0 x.max=0.5 y.min =0.035 y.max=0.065
#
electrode name= gate x.min=0.2 x.max=0.3 y.min =0.0 y.max=0.002
electrode name= source x.min=0 x.max=0.1 y.min =0.002 y.max=0.005
electrode name= drain x.min=0.4 x.max=0.5 y.min =0.002 y.max=0.005
#
doping uniform concentration= 1E13 p.type region=6
doping uniform concentration= 1E20 n.type region=3
doping uniform concentration=1E13 p.type region=4
doping uniform concentration=1E20 n.type region=5
#
contact name= gate n.poly
inter qf=3e10 y.max=0.005
contact name= source
contact name= drain
#
models cvt srh print
#
#output val.band con.band qfn qfp e.field j.electron j.hole j.conduction j.total ex.field ey.field flowline e.mobility h.mobility qss e.temp h.temp j.disp band.param charge
#
Method gummel newton
Solve init
#Solve prev
#Solve vdrain=0
#Solve vdrain=0.1
#Solve vdrain=0.5
Solve vdrain=1.5
#Solve vdrain=2
#Ramp the gate
#
Log outf=100nm_Vt_output.log master
Solve vgate=0 vstep=0.25 vfinal=3 name=gate
save outf=100nm_Vt_output.str
#plot result
tonyplot 100nm_Vt_output.log
#tonyplot 100nm_Vt_output.str
#extract device parameter
extract name="vt"(xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
- abs(ave(v."drain"))/2.0)
#
quit
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