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fully differential folded cascaded op-amp with fully differential gain-boosted amplifiers.

fully differential folded cascaded op-amp with fully differential gain-boosted amplifiers.

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This paper presents the analysis and design of high speed, high gain fully differential operational amplifier (opamp). Both the main op-amp and the boosting op-amp are fully differential folded-cascode. The main op-amp has a switched capacitor common mode feedback circuit. Two fully differential folded-cascode op amps with continuous-time CMFBs are...

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... high gain designs, two-stage configuration might be the appropriate choice; however, the speed of this configuration is the bottleneck. In this design, a fully differential folded cascode that has two fully differential folded cascode boosting amplifiers has been implemented as shown in Fig.2. In order to achieve desired phase margin, two compensation capacitors C c are connected as shown in Fig. 1.In the design process, NMOS transistors give about 4 times better transconductance compared to the same size PMOS transistors; this motivates us to reduce the number of PMOS transistors as much as possible. ...

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Citations

... The main op-amp provides the high unity-gain frequency whereas the gainboosting op-amps improve the open-loop DC gain without affecting the frequency behaviour. Nevertheless, this technique may raise two crucial problems, which are pole-zero doublet and instability [14]. The pole-zero doublet results in the degradation of settling time because the doublet appears as a slow exponential term in the step response of the op-amp. ...
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This paper demonstrates the design of integrated 8-bit pipelined ADC and DAC for Bluetooth Low Energy (BLE) system. The op-amp has provided sufficient open-loop DC gain to guarantee the excellent performance of ADC. While the hybrid DAC, which has been partitioned equally into two sub-segments, i.e. current-steering and binary-weighted resistor architectures operated with low power consumption and maintained good performance. This design has been performed using Silterra 180 nm CMOS process technology with the supplied voltage of 1.8 V. The silicon area is 3.02 mm^2. Post-layout simulation results exhibited the integrated ADC and DAC have integral non-linearity (INL) errors of −1.0/+0.5 LSB and −1.0/+1.0 LSB, respectively and consumed 39.6 mW for data conversion.