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(a) Schematic illustration of PTCDI-C 8 -rGO based SBTs. The output characteristics of an SBT depending on the applied gate bias to rGO electrodes at 300 K and 140 K. (c) Semilogarithmic plot of temperature-dependent current evolution in an SBT, and (d) estimated SBs from it. (e) Shift in the current flow regime in a SBT as a function of temperature, and detailed depiction of the temperature dependency (f) at the gate voltage of 40 V and (g) À40 V. (h) Current-temperature relation in the regime II, demonstrating a hopping transport behavior. (i) Three-dimensional description of different charge injection regimes as functions of temperature, gate bias and drain bias and (j) corresponding energy level diagrams. Reproduced with permission from ref. 33. Copyright 2018 American Chemical Society.
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Graphene-based vertical Schottky-barrier transistors (SBTs), renowned as graphene barristors, have emerged as a feasible candidate to fundamentally expand the horizon of conventional transistor technology. The remote tunability of graphene's electronic properties could endorse multi-stimuli responsive functionalities for a broad range of electronic...
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... investigate the charge injection properties at the interface of graphene-semiconductor heterojunctions, the electrical properties under different temporal conditions can be measured. Chem. Commun., 2023, 59, 974-988 | 977 As an example, Fig. 3a shows the device architecture used for estimation, based on the reduced graphene oxide as the source electrode and thermally deposited N,N 0 -dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ) as an n-type semiconductor layer. 33 Fig. 3b shows the output curves of the vertical SBT at various temperatures (300 and 140 K). The drain ...
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... under different temporal conditions can be measured. Chem. Commun., 2023, 59, 974-988 | 977 As an example, Fig. 3a shows the device architecture used for estimation, based on the reduced graphene oxide as the source electrode and thermally deposited N,N 0 -dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ) as an n-type semiconductor layer. 33 Fig. 3b shows the output curves of the vertical SBT at various temperatures (300 and 140 K). The drain current (I D ) shows that the positive drain voltage (V D ) is more dependent on temperature than the negative V D . The output curve measured at 140 K shows two distinct regimes with different slopes (V G o 0), unlike the output curve ...
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... A is the area of the junction, A* represents the effective Richardson constant, q is the element charge, e 0 and e r are the vacuum permittivity and dielectric constant of the semiconductor, d represents the barrier width, and k B is the Boltzmann constant. SB represents the Schottky-barrier height. Fig. 3c shows the ln(I sat /T 2 ) versus q/k B T plots, where I sat represents the diode saturation current which was determined at different V G and T values. The fitted values at high temperatures (redshaded regime) were reasonably consistent with the equation (linear relationship in the plot), indicating that at these temperatures, the ...
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... different V G and T values. The fitted values at high temperatures (redshaded regime) were reasonably consistent with the equation (linear relationship in the plot), indicating that at these temperatures, the charge injection follows the thermionic emission mechanism. The SB height extracted from the slope of the plot in the red shaded regime in Fig. 3c (which changes from 0.19 to 0.03 eV as the V G increases from À40 to 40 V) is shown in Fig. 3d. At a lower T and more negative V G , a deviation from the thermionic emission (blue shaded regime in Fig. 3c) was observed, indicating that the charge injection no longer follows the thermionic emission model at low temperatures (providing ...
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... consistent with the equation (linear relationship in the plot), indicating that at these temperatures, the charge injection follows the thermionic emission mechanism. The SB height extracted from the slope of the plot in the red shaded regime in Fig. 3c (which changes from 0.19 to 0.03 eV as the V G increases from À40 to 40 V) is shown in Fig. 3d. At a lower T and more negative V G , a deviation from the thermionic emission (blue shaded regime in Fig. 3c) was observed, indicating that the charge injection no longer follows the thermionic emission model at low temperatures (providing weak thermal energy), that is, the blue shaded regime should be considered through different ...
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... the charge injection follows the thermionic emission mechanism. The SB height extracted from the slope of the plot in the red shaded regime in Fig. 3c (which changes from 0.19 to 0.03 eV as the V G increases from À40 to 40 V) is shown in Fig. 3d. At a lower T and more negative V G , a deviation from the thermionic emission (blue shaded regime in Fig. 3c) was observed, indicating that the charge injection no longer follows the thermionic emission model at low temperatures (providing weak thermal energy), that is, the blue shaded regime should be considered through different models. Models that can be considered are tunneling models at high SB (negative V G ) and low SB (positive V G ). ...
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... in Fig. 3c) was observed, indicating that the charge injection no longer follows the thermionic emission model at low temperatures (providing weak thermal energy), that is, the blue shaded regime should be considered through different models. Models that can be considered are tunneling models at high SB (negative V G ) and low SB (positive V G ). Fig. 3e and f show the logarithmic plots of the output curves at V G = À40 V and V G = +40 V, respectively. On the formation of high SBs (negative V G , Fig. 3e), the current changed substantially depending on both T and V D ...
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... energy), that is, the blue shaded regime should be considered through different models. Models that can be considered are tunneling models at high SB (negative V G ) and low SB (positive V G ). Fig. 3e and f show the logarithmic plots of the output curves at V G = À40 V and V G = +40 V, respectively. On the formation of high SBs (negative V G , Fig. 3e), the current changed substantially depending on both T and V D ...
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... as Fowler-Nordheim (F-N) tunneling, can be expressed as follows: Considering that the hopping can occur 3-dimensionally within the barrier, a linear relation between ln(I D ) and T À1/4 can be expected, similar to the formula for 3-dimensional variable range hopping. A plot of ln(I D ) versus T À1/4 for our system showed a good linear relation (Fig. 3h). When the SB was lowered by applying a positive gate bias, in contrast to the thermionic emissiondominated charge injection at high temperature, the charge injection at low temperatures may be explained by a hopping mechanism taking advantage of impurity states. Fig. 3i and j displays the phase diagram describing the different charge ...
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... plot of ln(I D ) versus T À1/4 for our system showed a good linear relation (Fig. 3h). When the SB was lowered by applying a positive gate bias, in contrast to the thermionic emissiondominated charge injection at high temperature, the charge injection at low temperatures may be explained by a hopping mechanism taking advantage of impurity states. Fig. 3i and j displays the phase diagram describing the different charge injection processes at the rGO-PTCDI-C 8 interface for different combinations of drain voltage, gate voltage, and temperature. At sufficiently high temperatures, charge injection at the SB formed at the rGO-PTCDI-C 8 interface was dominated by thermally activated ...
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