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![a) 3D illustration of IGZO TFTs on a flexible substrate under X‐ray irradiation, b) Photograph of the transistors. (c) Transfer characterization of the TFT device. c–e) Shows the output characteristics without and after exposed various X‐ray doses, respectively. The change of transport parameters before and after X‐ray exposure, further compared with organic semiconductor TFT, f) the normalized mobility. g) SS value for the device under different radiation conditions and h) threshold voltage shifts with a function of X‐ray doses. Reproduced with permission.[¹⁴] Copyright 2016, Wiley‐VCH. i) Schematic flexible IGZO‐based transistor for x‐ray radiation study. j) Circuit diagram of the radiation‐sensitive TFT connected with the RFID sensor. k) Channel impedance z under various Vc. l) Relationship between the channel impedance and time for the radiation‐sensitive TFT. Reproduced with permission.[¹⁵] Copyright 2018, Science.](profile/Zahir-Muhammad/publication/364061736/figure/fig11/AS:11431281246190585@1716339246572/a-3D-illustration-of-IGZO-TFTs-on-a-flexible-substrate-under-X-ray-irradiation-b.png)
a) 3D illustration of IGZO TFTs on a flexible substrate under X‐ray irradiation, b) Photograph of the transistors. (c) Transfer characterization of the TFT device. c–e) Shows the output characteristics without and after exposed various X‐ray doses, respectively. The change of transport parameters before and after X‐ray exposure, further compared with organic semiconductor TFT, f) the normalized mobility. g) SS value for the device under different radiation conditions and h) threshold voltage shifts with a function of X‐ray doses. Reproduced with permission.[¹⁴] Copyright 2016, Wiley‐VCH. i) Schematic flexible IGZO‐based transistor for x‐ray radiation study. j) Circuit diagram of the radiation‐sensitive TFT connected with the RFID sensor. k) Channel impedance z under various Vc. l) Relationship between the channel impedance and time for the radiation‐sensitive TFT. Reproduced with permission.[¹⁵] Copyright 2018, Science.
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The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post‐processing after designing, making their structures more complex than the standard systems. Thus, unique designs and strategies are developed to enable...
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... So that is our motivation to do this research on a p-MIS device with an Al/SiC gate at various K values of insulator with Al 2 O 3 as the high K material. This is driven by the fact that high voltage or power MIS devices have utilized SiC as the semiconductor or to make more reliable device ionizing radiation-sensitive circuits [5]. ...
Test results have indicated the types of behaviors that can be expected with band engineering. The high-k dielectric used has introduced a mid-gap state in the silicon band gap. It is the Al 2 O 3 layer that is causing this. By taking a polycrystalline high-k dielectric, the different grain boundaries that occur in the structure introduce different energies in the insulator layer. The electrons in the silicon that are being pinned are being trapped by these high and low energy states between the oxygen and silicon bonds. This is known as a quasi-static trapping. What this does is build up a positive oxide charge over time. This has an effect on the overall conductance of the p-type silicon. In terms of positive ion charge that is felt by the silicon, the charge density is still the same with electrons being spatially redistributed around the bonding sites. This is a key advantage with high-k dielectrics and one of the goals of the current research into MIS devices. The test data is showing a current increase from the field emission. When tested with constant voltage and varying temperature , the emission is a result of a thermally activated process by the tunneling increases. Energy is transferable to electrons in the silicon with carriers increased and at higher temperatures the increase in carriers is exponential. This can cause negative bias instability in the device and is not a desirable outcome for p-type or CMOS with progression into more advanced technology in the quest for higher device integration. This issue can potentially be resolved by band engineering the silicon. This is a large and complex topic and according to results and the current understanding of high-k dielectrics, no further progress should be made until it is fully understood how an insulator with a mid-gap state can affect the silicon. This and the effects of positive charge build up are the research topics which will lead on from the current work into MIS devices with high-k dielectrics.
... Titanium dioxide also known as ultra ne metal dioxide nanocrystalline titanium dioxide has a lot of properties such as stability of chemical and mechanical, a protective layer on integrated circuits, and a large dielectric constant [ 1 ]. Wide band gap semiconductors are of interest due to their potential applications in a large number of novel devices, such as radiation-immune solar cells, high-temperature integrated circuits, and high-power electronic devices [ 2 ]. FeTiO 3 is a wide band gap (2.54 eV) antiferromagnetic semiconductor material having potential applications in spintronics with a Curie temperature of 1000 K [ 3 ]. ...
Pure and doped Titanium dioxide TiO 2 thin film with Europium-iron was prepared by sol-gel method and deposited the thin film on a glass substrate by RF magnetron sputtering. The prepared sample was characterized by XRD, VSM, and dielectric properties for the analysis of structural, magnetic behavior, and chemical bonding, respectively. XRD shows the pure phase of FeTiO 3 at 6wt% to 10wt%. An increase in crystallite size is observed with the increase in dopant concentration. Crystallite size varied from 21nm to 26 nm with an increase in the dopant concentration. The dielectric constant and tangent loss showed normal dispersion behavior. VSM showed the Soft Ferromagnetic behavior. The decrease in saturation magnetization is associated with an increase in dislocations in FeTiO 3 thin films. This type of material is suitable for Spintronic devices.
... From guiding missiles to enabling communication in the battlefield, these connections are indispensable. What sets military applications apart is the demanding operational environment, where extreme temperatures, vibrations, and electromagnetic interference are commonplace [3,4]. Soldered connections must not only endure these harsh conditions but also guarantee uninterrupted performance. ...
... Six different TMDC materials, namely TaS 2 , TaSe 2 , WS 2 , WSe 2 , ZrS 2 and ZrSe 2 , were synthesized and tested for electrochemical property studies without using conductive additives. Although TMDCs can be synthesized with CVD, hydrothermal, microwave-assisted or solution phase techniques, [21][22][23][24] we opted for the chemical vapor transport (CVT) technique due to its high purity crystalline nature yield. 25 The CVT technique is highly suitable for our work as it only requires distinctive constituent materials to grow a particular TMDC compound and does not require unnecessary precursors as in the case of other techniques. ...
... The exhibition of double layer (EDLC) supercapacitor behaviour by transition metal dichalcogenides is already reported in the literature. 21,38,39 Fig. 4(c) represents a plot where the trend of the electrode's capacitance (normalized) against a range of frequencies can be found. It can be observed that the WSe 2 electrode possessed the highest capacitance value followed by ZrS 2 up to around 500 ...
Layered transition metal dichalcogenides (TMDCs) have garnered immense interest in supercapacitor energy storage applications. Despite the growing reports on TMDCs in the context of electrochemical supercapacitor studies, the prevailing use of carbon-based additives often obscures their correct analysis and overshadows their intrinsic behavior. In this work, we meticulously analyzed supercapacitor characteristics of distinct TMDC materials without using carbon or any other conductive, revealing their pure intrinsic behavior, specifically focusing on highly crystalline 2H phase tantalum (Ta), tungsten (W) and zirconium (Zr)-based TMDCs, grown using the chemical vapor transport (CVT) technique. The grown materials were characterized using cutting-edge techniques like X-ray diffraction (XRD), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM), ensuring a comprehensive perspective of the synthesized TMDCs. To delve into the electrochemical properties of the prepared electrodes, extensive analysis using cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS) was performed. The obtained results were further supported with density functional theory (DFT) calculations to get insights regarding the charge transfer mechanism and electronic density distribution proximate to the Fermi levels. The synergy between the experimental results and theoretical calculations significantly improved the validity of our findings, thus probing the comprehension and optimization avenues of TMDCs for superior supercapacitor performance.
... GaN materials, as one kind of the typical representatives of third-generation semiconductor materials, can be usually used in the electronic devices working in harsh environments due to the excellent properties of third-generation semiconductors such as high-temperature resistance, high thermal conductivity, wide band gap, and radiation resistance. [1][2][3] In recent years, GaN-based electronic devices have been widely used in aerospace, communication equipment, medical, and other fields, [4,5] such as power amplifiers of radar, fast charging chargers of mobile phones. In particular, GaN-based high electron mobility transistors (HEMTs) are often used in highpower devices, and the massive heat often accompanies with the working devices. ...
The thermal conductivity of GaN nanofilm is simulated by using the molecular dynamics (MD) method to explore the influence of the nanofilm thickness and the pre-strain field under different temperatures. It is demonstrated that the thermal conductivity of GaN nanofilm increases with the increase of nanofilm thickness, while decreases with the increase of temperature. Meanwhile, the thermal conductivity of strained GaN nanofilms is weakened with increasing the tensile strain. The film thickness and environment temperature can affect the strain effect on the thermal conductivity of GaN nanofilms. In addition, the analysis of phonon properties of GaN nanofilm showed that the phonon dispersion and density of states of GaN nanofilms can be significantly modified by the film thickness and strain. The results in this work can provide the theoretical supports for regulating the thermal properties of GaN nanofilm through tailoring the geometric size and strain engineering.
... Protons have also been identified as one of the major source of degradation when the device is operated in a space environment [8,[35][36][37][38]. The semiconductor devices in the outer space are exposed to a significant amount of electron and proton flux due to Van Allen Radiation belt situated close to the earth atmosphere [39,40]. This exposure will result in a significant deterioration of the material system and thus in the degradation of the electrical parameters of the resulting GaN HEMT device [8,[41][42][43]. ...
In this paper an in – depth analysis of SiN passivated AlGaN/GaN HEMTs on sapphire and SiC substrate for radiation hardened operation has been presented. An exhaustive study comprising of Conventional, Gate Field Plate (GFP), and Dual Field Plate (DFP) architectures have been studied through exhaustive TCAD simulations under different radiation environments. Initial analysis has been carried out by intentionally subjecting the devices to heavy ion particle strikes. The particle strikes have also been localized along different positions of the device in order to examine the behavior of the architectures due to the occurrence of Single Event Effects (SEEs) in the space environment. Comparisons demonstrate an excellent reliability of DFP HEMTs in terms of resistance to the change observed in device performance parameters post heavy ion strike. The reliability of the device architectures has also been investigated in presence of proton shower by creating a virtual environment comprising of energetic protons. Due to non – ionizing energy loss (NIEL), the protons can traverse large distances in the epi – layer stack. In this regard, Substrate dependent effects have also been investigated by coupling the AlGaN/GaN stack over SiC-4 H and Sapphire substrates to study the robustness against the heavy ion and proton flux. Significant enhancement in both the OFF – State and ON – State current has been observed on the SiC-4 H substrate, indicating a robust operation for GaN on Sapphire substrates. The radiation hardness of the device architectures has also been studied by realizing thick AlGaN barriers that further improve the device performance. Finally, the device architectures are compared from an application perspective by investigating the Class AB Power Amplifier performance. Comparisons demonstrate the suitability of DFP AlGaN/GaN HEMTs in achieving both robustness against different radiation environments and as well as exhibiting higher output power density compared to its Conventional and GFP counterparts.
Radiation tolerance of semiconductors depends on the dynamic defect annealing efficiency during irradiation. Consequently, it matters at what temperature one keeps the sample during irradiation, so that elevated temperatures typically result in lower remaining disorder. In the present work, we observed an opposite trend for the nitrogen ion implants into zinc oxide. Combining ion channeling technique, x-ray diffraction, and photoluminescence spectroscopy, we demonstrate that the interaction of nitrogen with radiation defects promotes an inverse dynamic annealing process, so that the increase in irradiation temperature leads to a more efficient defect formation. As a result, the residual radiation disorder is maximized at 650 °C and this state is characterized by the appearance of prominent optical signatures associated with zinc interstitials and strongly reduced strain accumulation as compared to the samples implanted at lower temperatures. However, for higher implantation temperatures, the impact of the inverse annealing decreases correlating with the surface degradation and loss of nitrogen.
The two-dimensional (2D) MoSi2N4 monolayer fabricated recently has attracted extensive attentions due to its exotic electronic properties and excellent stability for future applications. Using firstprinciples calculations, we have shown that...
The effect of doping with three different group IV metal cations, specifically Ti4+, Zr4+, and Hf4+, on the stability of indium-zinc-oxide (InZnO) thin-film transistors (TFTs) against 5 MeV proton radiation...
