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(a) Peak wavelength versus bias current over temperature. (b) Overlapped optical emission spectra versus heat sink temperature at a fixed laser bias current of 100 mA.

(a) Peak wavelength versus bias current over temperature. (b) Overlapped optical emission spectra versus heat sink temperature at a fixed laser bias current of 100 mA.

Contexts in source publication

Context 1
... peak wavelength of 1877 nm is demonstrated, with a side mode suppression ratio (SMSR) of $45 dB achieved, in excellent agreement with simulated values. In Figure 21a we plot the peak wavelength versus bias current as a function of laser submount temperature. The peak wavelength tunes linearly with bias current at a tuning rate of $0.017 nm/mA. ...
Context 2
... peak wavelength tunes linearly with bias current at a tuning rate of $0.017 nm/mA. In Figure 21b the optical emission spectrum over a wide temperature range, from À5 to 55°C, is plotted. The single mode peak lasing wavelength shows a linear dependence with current and temperature, with a tuning rate of Δλ/ΔI $0.017 nm/mA and Δλ/ΔT of 0.113 nm/ o C, consistent with that expected due to the temperature-induced change in the refractive index [29]. ...

Citations

... A simple and effective alternative approach to achieve single-mode laser is introducing micronlevel index perturbations into the ridge waveguide which can be easily prepared by standard contacted photolithography [15]. Significant progress has been achieved in InP-based lasers in the near infrared region [16], proving that this approach not only has a simple and low-cost fabrication process but also portrays lots of superiorities over the DFB and DBR lasers with stable operation over a larger temperature range, narrow linewidth and low sensitivity to optical feedback [17,18]. Moreover, the convenience of monolithic integration with other electro-optical modulators [19][20][21], enables this kind of laser an ideal candidate for photoelectric integrated devices. ...
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