(a) Optical micrograph of a bare micro-hotplate; (b) a typical device after deposition of the WO3 paste; (c) a gold wire-bonded microhotplate on a TO46 package and (d) SEM (250× magnification) of the surface of the deposited WO3 material.  

(a) Optical micrograph of a bare micro-hotplate; (b) a typical device after deposition of the WO3 paste; (c) a gold wire-bonded microhotplate on a TO46 package and (d) SEM (250× magnification) of the surface of the deposited WO3 material.  

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Semiconductor gas sensors based upon n-type WO3 nanoparticle powder were fabricated and their response from 100 ppb to ppm levels of H2S in air has been investigated. In this study, a low power MEMS based micro-hotplate was employed as the substrate and operated at a constant temperature of 350̊C. Experimental data demonstrate repeatable results ac...

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... this study, a low power MEMS based micro-hotplate gas sensor was used, and the operating temperature was controlled by an adjustable constant current circuit. The micro-hotplate is shown in Fig. 1a (CCS09C, Cambridge CMOS Sensors Ltd). The MEMS structure was fabricated in a commercial foundry and is based upon silicon-on- insulator (SOI) technology. In the membrane structure, a tungsten resistive micro-heater is embedded within a 5 m thick metal/oxide stack ensuring a low DC power consumption (e.g. 65 mW at 600C). The membrane is ...
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... solution (Figs. 1a and 1b). After deposition of the WO3 paste the substrate was left to dry in air at room temperature for ~12 h followed by annealing at 450C for 1 h, and then at 350C for about 23 h under ambient air to obtain the sensor element consisting of n-type WO3. Finally, the silicon die was wire-bonded onto a standard TO-46 header (Fig. 1c). Fig. 1d presents a scanning electron microscopy (SEM) image of the annealed paste with a porous microstructure showing a widespread grain size distribution with average particle size in hundreds of nm. The gas sensing measurements were performed at the Microsensors & Bioelectronics Laboratory at the University of Warwick using ...
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... (Figs. 1a and 1b). After deposition of the WO3 paste the substrate was left to dry in air at room temperature for ~12 h followed by annealing at 450C for 1 h, and then at 350C for about 23 h under ambient air to obtain the sensor element consisting of n-type WO3. Finally, the silicon die was wire-bonded onto a standard TO-46 header (Fig. 1c). Fig. 1d presents a scanning electron microscopy (SEM) image of the annealed paste with a porous microstructure showing a widespread grain size distribution with average particle size in hundreds of nm. The gas sensing measurements were performed at the Microsensors & Bioelectronics Laboratory at the University of Warwick using fully-automated ...

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... Index Terms-gas sensor, hydrogen environment, hydrogen sulfide 10 58, 75, 73, 54,24, 91 STD 4,19, ...
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