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(a) Lattice structure of PZT and PZT/MgO stack; (b) HRXRD showing a normal scan of the deposited PZT at varying RF power and annealed at 650 • C; (c) HRXRD showing a normal scan of the deposited PZT 35 W RF power with varying deposition time and annealed at 650 • C; (d) ω scan of (100) peak for the PZT annealed at 650 and 700 • C with inset showing HRXRD normal scan at different annealing temperature; (e) ϕ scan of 50 W, 650 • annealed PZT sample; (f) SEM, AFM and HRXRD of the optimized PZT film.
Source publication
We demonstrate, for the first time, sputtered PZT as a platform for the development of Si-based photonic devices such as rings, MZI, and electro-optic modulators. We report the optimization of PZT on MgO(002) substrate to obtain highly oriented PZT film oriented towards the (100) plane with a surface roughness of 2 nm. Si gratings were simulated fo...
Contexts in source publication
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... PZT film growth and characterization Fig.1(a) shows the lattice of PZT with the "Pb" atom occupying the vertices, "O" at the face centers and "Zr" and "Ti" at the body centers slightly displaced from the center giving it a spontaneous polarization. ...
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... PZT film growth and characterization Fig.1(a) shows the lattice of PZT with the "Pb" atom occupying the vertices, "O" at the face centers and "Zr" and "Ti" at the body centers slightly displaced from the center giving it a spontaneous polarization. Fig.1(a) shows the PZT/MgO stack wherein MgO with a lattice constant of (a=0.4216 ...
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... PZT deposition was done at varying RF power of 35 W,50 W, 100 W, and 150 with a source-to-target distance of 4.2 cm and 14 sccm argon flow. The deposition was done for 2 Hr followed by ex-situ anneal in air ambiance with a ramp rate of 1.5 • C/min and dwell temperature of 650 • C. The deposited sample was allowed to cool to room temperature over a duration of 10 Hr. Fig.1(b) shows the high-resolution X-ray diffraction (HRXRD) spectra of the PZT phase obtained for varying RF power (deposition time of 2 Hr) showing a polycrystalline PZT film on MgO(002) at 150W, highly oriented PZT with only [100] plane for the film deposited at 50 W and at 35 W showing the presence of PbO and PbTiO 3 ("⊗"). ...
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... shows the high-resolution X-ray diffraction (HRXRD) spectra of the PZT phase obtained for varying RF power (deposition time of 2 Hr) showing a polycrystalline PZT film on MgO(002) at 150W, highly oriented PZT with only [100] plane for the film deposited at 50 W and at 35 W showing the presence of PbO and PbTiO 3 ("⊗"). Fig.1(c) shows the variation in the phase of PZT deposited at RF power of 35 W, 650 • C annealing temperature, and varying deposition time with perovskite phase(∇) appearing for deposition of ≥165 min confirming the thickness dependency of perovskite phase formation at a constant annealing temperature. ...
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... and PbTiO 3 are formed at the interface which on further annealing forms the perovskite phase [12,13] but also leads to an increase in the crack density of the film. The degree of crystallinity can be increased by increasing the annealing temperature as seen in (ω scan) in Fig.1(d) with the reduction in FWHM with increasing temperature. ...
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... degree of crystallinity can be increased by increasing the annealing temperature as seen in (ω scan) in Fig.1(d) with the reduction in FWHM with increasing temperature. We observe a reduction in the FWHM at 700 • C film, but it increases the roughness and also other peaks start to apper in the XRD, thus reducing crystallinity as seen in the inset in Fig.1(d). The periodic peaks of PZT in in-plane XRD spectra(ϕ scan) shown in ...
