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(a) Induced phase retardation as a function of various processing conditions such as the azimuth density of the slow-axis rotation (□), pulse energy Ep (, insets), and numerical aperture (left to right: 0.16–1.2 NA). Blue open triangles (▿) show the relative standard deviation of the measured retardation value as a function of azimuth density of the slow-axis rotation. The azimuth density experiments were performed at a fixed pulse energy of 0.8 μJ for 0.16 NA, 0.35 NA, and 0.55 NA, and 0.4 μJ for 1.2 NA, and the pulse energy experiments were performed at a fixed azimuth density of 0.5 rad/μm. The retardance measurement system was operating at 546 nm wavelength. (b) Azimuth of the slow-axis of a laser induced form birefringence dependence on its rotation density. Top image—the azimuth of the slow-axis of the imprinted linear-phase element with the density varying from 0.05π rad/μm to 0.5π rad/μm; bottom graph—the profile (white dashed line in top image) of azimuth of the slow-axis extracted from the birefringence image. Pseudo colours (the inset in the top image) indicate the local orientation of the slow-axis. The birefringence measurement system was operating at 546 nm wavelength.

(a) Induced phase retardation as a function of various processing conditions such as the azimuth density of the slow-axis rotation (□), pulse energy Ep (, insets), and numerical aperture (left to right: 0.16–1.2 NA). Blue open triangles (▿) show the relative standard deviation of the measured retardation value as a function of azimuth density of the slow-axis rotation. The azimuth density experiments were performed at a fixed pulse energy of 0.8 μJ for 0.16 NA, 0.35 NA, and 0.55 NA, and 0.4 μJ for 1.2 NA, and the pulse energy experiments were performed at a fixed azimuth density of 0.5 rad/μm. The retardance measurement system was operating at 546 nm wavelength. (b) Azimuth of the slow-axis of a laser induced form birefringence dependence on its rotation density. Top image—the azimuth of the slow-axis of the imprinted linear-phase element with the density varying from 0.05π rad/μm to 0.5π rad/μm; bottom graph—the profile (white dashed line in top image) of azimuth of the slow-axis extracted from the birefringence image. Pseudo colours (the inset in the top image) indicate the local orientation of the slow-axis. The birefringence measurement system was operating at 546 nm wavelength.

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Article
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High-precision three-dimensional ultrafast laser direct nanostructuring of silica glass resulting in multi-layered space-variant dielectric metasurfaces embedded in volume is demonstrated. Continuous phase profiles of nearly any optical component are achieved solely by the means of geometric phase. Complex designs of half-wave retarders with 90% tr...

Citations

... Recent emergence of directly written silica glass optical elements enabled a novel and elegant way to suppress output beam distortions and depolarization in end-pumped amplifiers. It was shown, that under high intensity laser irradiation, the structure of glass transforms into self-organized periodical nanostructures consisting of decomposed material planes [28,29]. Such self-structured pattern can then act as a birefringent material and introduce geometrical phase difference to incident laser radiation [29]. ...
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... In this work, we use a type 2 modification of bulk transparent dielectric material to create a geometrical phase element (GPE) [53][54][55]. As a femtosecond laser beam is raster-scanned over the glass, nanogratings are formed with slow axes aligned perpendicular to the polarization of the laser beam. ...
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The writing process of birefringent structures in the volume of fused silica by focused ultrashort laser pulses with wavelength in visible range and various values of pulse energy, pulse duration, repetition rate, numerical aperture and moving substrate velocity has been studied. The retardance value of fabricated structures has been measured and influence of the subsequent annealing of these structures has been studied. It was shown, that combination of writing layered structures with subsequent annealing provides structures with high homogeneity, required retardance value and high transmittance.